In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr4+:YAG. Two crystals of Nd3+:YVO4 and Nd3+:Gd VO4 are adopted to ge...In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr4+:YAG. Two crystals of Nd3+:YVO4 and Nd3+:Gd VO4 are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 m W and 852 m W at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the Li B3O5 frequency doubling crystal.展开更多
基金supported by the National Natural Science Foundation of China(No.61108021)the Beijing Natural Science Foundation(No.4102048)the Fundamental Research Funds for the Central Universities(No.2013JBM091)
文摘In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr4+:YAG. Two crystals of Nd3+:YVO4 and Nd3+:Gd VO4 are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 m W and 852 m W at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the Li B3O5 frequency doubling crystal.
