A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations （SP） with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furth...A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations （SP） with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furthermore,the important role of the phase tuning section on the SP is investigated.展开更多
报道了采用不同的电介质薄膜 Si O2 、Si Ox Ny、Si3N4 和 Si Ox Py Nz 及其组合用于 In Ga As P/In P多量子阱材料的包封源 .在高纯氮气保护下经 85 0℃、7s的快速退火处理 ,结果发现 :含磷组分 Si Ox Py Nz 电介质薄膜包封下的 In-Ga ...报道了采用不同的电介质薄膜 Si O2 、Si Ox Ny、Si3N4 和 Si Ox Py Nz 及其组合用于 In Ga As P/In P多量子阱材料的包封源 .在高纯氮气保护下经 85 0℃、7s的快速退火处理 ,结果发现 :含磷组分 Si Ox Py Nz 电介质薄膜包封下的 In-Ga As P/In P量子阱带隙展宽十分显著 ,高达 2 2 4 me V ,PL谱峰值波长蓝移 342 nm ,半宽较窄仅为 2 5 nm ,说明量子阱性能保持十分良好 。展开更多
The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is ...The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppress ion ratio (SMSR) is 40dB.展开更多
Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth adjustments.The tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(Q...Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth adjustments.The tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(QWIP) induced by the interdifussion of Al atoms was studied theoretically.By assuming an improvement of the heterointerface quality and an enhanced Al interdiffusion caused by postgrowth intermixings,the photoluminescence spectrum shows a blue-shifted,narrower and enhanced photoluminescence peak.The infrared optical absorption spectrum also shows the expected redshift of the response wavelength.However,the variation in the absorption peak intensity depends on the boundary conditions of the photo generated carriers.For high-quality QWIP samples,the mean free path of photocarriers is long so that the photocarriers are largely coherent when they transport across quantum wells.In this case,the enhanced Al interdiffusion can significantly degrade the infrared absorption property of the QWIP.Special effects are therefore needed to maintain and/or improve the optical properties of the QWIP device during postgrowth treatments.展开更多
文摘A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations （SP） with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furthermore,the important role of the phase tuning section on the SP is investigated.
文摘The two-section tunable ridge waveguide distribu ted Bragg reflector (DBR) laser fabricated by the selective intermixing of an InGaAsP-InGaAsP quantum well structure is presented.The threshold current of the laser is 51mA.The tunable range of the laser is 4.6nm,and the side mode suppress ion ratio (SMSR) is 40dB.
文摘Quantum well intermixing techniques modify the geometric shape of quantum wells to allow postgrowth adjustments.The tuning effect on the optical response property of a GaAs/AlGaAs quantum well infrared photodetector(QWIP) induced by the interdifussion of Al atoms was studied theoretically.By assuming an improvement of the heterointerface quality and an enhanced Al interdiffusion caused by postgrowth intermixings,the photoluminescence spectrum shows a blue-shifted,narrower and enhanced photoluminescence peak.The infrared optical absorption spectrum also shows the expected redshift of the response wavelength.However,the variation in the absorption peak intensity depends on the boundary conditions of the photo generated carriers.For high-quality QWIP samples,the mean free path of photocarriers is long so that the photocarriers are largely coherent when they transport across quantum wells.In this case,the enhanced Al interdiffusion can significantly degrade the infrared absorption property of the QWIP.Special effects are therefore needed to maintain and/or improve the optical properties of the QWIP device during postgrowth treatments.
