In this paper, the light trapping characteristics of glass substrate with hemisphere pit （HP） arrays in thin film Si solar cells are theoretically studied via a numerical approach. It is found that the HP glass subs...In this paper, the light trapping characteristics of glass substrate with hemisphere pit （HP） arrays in thin film Si solar cells are theoretically studied via a numerical approach. It is found that the HP glass substrate has good antireflection properties. Its surface reflectance can be reduced by - 50% compared with planar glass. The HP arrays can make the unabsorbed light return to the absorbing layer of solar cells, and the ratio of second absorption approximately equals 30%. Thus, the glass substrate with the hemisphere pit arrays （HP glass） can effectively reduce the total reflectivity of a solar celt from 20% to 13%. The lip glass can also prolong the optical path length. The numerical results show that the total optical path length of the thin film Si solar cell covered with the HP glass increases from 2ω to 409. These results are basically consistent with the experimental results.展开更多
The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the ho...The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.展开更多
We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three...We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.展开更多
基金Project supported by the National High-Tech Research and Development Program of China(Grant No.2011AA050518)
文摘In this paper, the light trapping characteristics of glass substrate with hemisphere pit （HP） arrays in thin film Si solar cells are theoretically studied via a numerical approach. It is found that the HP glass substrate has good antireflection properties. Its surface reflectance can be reduced by - 50% compared with planar glass. The HP arrays can make the unabsorbed light return to the absorbing layer of solar cells, and the ratio of second absorption approximately equals 30%. Thus, the glass substrate with the hemisphere pit arrays （HP glass） can effectively reduce the total reflectivity of a solar celt from 20% to 13%. The lip glass can also prolong the optical path length. The numerical results show that the total optical path length of the thin film Si solar cell covered with the HP glass increases from 2ω to 409. These results are basically consistent with the experimental results.
基金supported by the State Key Program of the National Science Foundation of China(Grant No.61334001)the National Key R&D Program of China(Grant Nos.2016YFB0400600 and 2016YFB0400601)Development Program of Jiangxi province(Grant No.20165ABC28007 and No20182ABC28003)
文摘The impact of the V-pits covering layer(VCL) position on the optoelectronic performance of InGaN-based green light-emitting diodes(LEDs) was investigated. It is found that earlier covering of V-pits will hinder the hole injection via the sidewall of V-pits, and then result in less quantum wells(QWs) participating in radioluminescence. The current-voltage characteristics show that the LEDs with earlier covering of V-pits have higher operating voltage at room temperature, and a more dramatic voltage rise with the reduction of temperature. Meanwhile, more manifested emission peaks for sidewall QWs and deeper QWs near to ntype layer was observed in the sample with earlier coveing of V-pits at cryogenic temperatures, for the reason that the holes being injected via V-pits sidewall have higher kinetic energy and could transport to deeper QWs.
基金supported by the Natural Science Foundation of Fujian Province,China(Grant No.2012J01280)
文摘We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.
