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Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm:errata
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作者 D.Bimberg C.Meuer +6 位作者 M.Lmmlin S.Liebich J.Kim E.Varene A.Kovsh I.Krestnikov G.Eisenstein 《Chinese Optics Letters》 SCIE EI CAS CSCD 2009年第3期266-266,共1页
The authors regret that one of the coauthors was inadvertently omitted in the previous paper. E. Varene was a member of the Institut fur Festk6rperphysik at the Technische Universitat Berlin and contributed to the res... The authors regret that one of the coauthors was inadvertently omitted in the previous paper. E. Varene was a member of the Institut fur Festk6rperphysik at the Technische Universitat Berlin and contributed to the results on cross-phase modulation. 展开更多
关键词 Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 M
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Exact investigation of the electronic structure and the linear and nonlinear optical properties of conical quantum dots
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作者 M.Dezhkam A.Zakery 《Chinese Optics Letters》 SCIE EI CAS CSCD 2012年第12期52-55,共4页
Intersubband linear and third-order nonlinear optical properties of conical quantum dots with infinite barrier potential are studied. The electronic structure of conical quantum dots through effective mass approximati... Intersubband linear and third-order nonlinear optical properties of conical quantum dots with infinite barrier potential are studied. The electronic structure of conical quantum dots through effective mass approximation is determined analytically. Linear, nonlinear, and total absorption coefficients, as well as the refractive indices of GaAs conical dots, are calculated. The effects of the size of the dots and of the incident electromagnetic field are investigated. Results show that the total absorption coefficient and the refractive index of the dots largely depend on the size of the dots and on the intensity and polarization of the incident electromaenetic field. 展开更多
关键词 In Exact investigation of the electronic structure and the linear and nonlinear optical properties of conical quantum dots RI QDs AC GaAs
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