We prepare of ZnO quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report it’s working as ethanol sensor. The samples have been prepared via quenching technique where bulk ZnO powder is calcined at very...We prepare of ZnO quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report it’s working as ethanol sensor. The samples have been prepared via quenching technique where bulk ZnO powder is calcined at very high temperature of 1200°C and then quenched into ice cold polyvinylpyrrolidone solution. Thee acteiut the samples specimen have been characterized by using UV/VIS spectroscopy, X-ray diffracttion study and high resolution transmission electron microscopy (HRTEM). These studies indicate the sizes of quantum dots to be within 10 nm. The prepared quantum dot samples have been examined for ethanol vapour sensing by exploring the variation of their resistance with time at different operating temperatures. It has been revealed that ZnO quantum dots can sense ethanol at low operating (230°C) temperature with less response time.展开更多
Low toxic graphene quantum dot（GQD） was synthesized by pyrolyzing citric acid in alkaline solution and characterized by ultraviolet-visible（UV-vis） spectroscopy,X-ray diffraction（XRD）,atomic force microscopy（AF...Low toxic graphene quantum dot（GQD） was synthesized by pyrolyzing citric acid in alkaline solution and characterized by ultraviolet-visible（UV-vis） spectroscopy,X-ray diffraction（XRD）,atomic force microscopy（AFM）,spectrofluorimetery and dynamic light scattering（DLS） techniques.GQD was used for electrode modification and electro-oxidation of doxorubicin（DOX） at low potential.A substantial decrease in the overvoltage（- 0.56 V） of the DOX oxidation reaction（compared to ordinary electrodes） was observed using GQD as coating of glassy carbon electrode（GCE）.Differential pulse voltammetry was used to evaluate the analytical performance of DOX in the presence of phosphate buffer solution（pH 4.0） and good limit of detection was obtained by the proposed sensor.Such ability of GQD to promote the DOX electron-transfer reaction suggests great promise for its application as an electrochemical sensor.展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.展开更多
In the new century, quantum technology has developed rapidly and has been applied in many fields. As an important aspect of the aerospace science, metrology and measuring science is a field which is influenced by the ...In the new century, quantum technology has developed rapidly and has been applied in many fields. As an important aspect of the aerospace science, metrology and measuring science is a field which is influenced by the quantum technology dramatically. The new generation of the International System of Units will be redefined on the basis of the quantum theory. More and more new sensing techniques are developed taking into account quantum principles. In this paper, the influence of quantum technology on metrology and measuring science is introduced.展开更多
A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping dist...A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.展开更多
We analyze the development of quantum cryptography communication,including analyze the problems lie in the existent literatures and give the resolve methods according to these problems.Then discuss the quantum cryptog...We analyze the development of quantum cryptography communication,including analyze the problems lie in the existent literatures and give the resolve methods according to these problems.Then discuss the quantum cryptography communication for wireless networks and also point out the shortcoming of current research and the future of quantum wireless networks.展开更多
We have theoretically and experimentally studied the dispersive signal of the Rydberg atomic electromagneticallyinduced transparency(EIT)Autler–Townes(AT)splitting spectra obtained using amplitude modulation of the m...We have theoretically and experimentally studied the dispersive signal of the Rydberg atomic electromagneticallyinduced transparency(EIT)Autler–Townes(AT)splitting spectra obtained using amplitude modulation of the microwave(MW)electric field.In addition to the two zero-crossing points interval△f_(zeros),the dispersion signal has two positive maxima with an interval defined as the shoulder interval△f_(sho),which is theoretically expected to be used to measure a much weaker MW electric field.The relationship of the MW field strength E_(MW)and△f_(sho)is experimentally studied at the MW frequencies of 31.6 GHz and 9.2 GHz respectively.The results show that△f_(sho)can be used to characterize the much weaker E_(MW)than that of△f_(zeros)and the traditional EIT–AT splitting interval△f_(m);the minimum E_(MW)measured by△f_(sho)is about 30 times smaller than that by△f_(m).As an example,the minimum E_(MW)at 9.2 GHz that can be characterized by△f_(sho)is 0.056 mV/cm,which is the minimum value characterized by the frequency interval using a vapor cell without adding any auxiliary fields.The proposed method can improve the weak limit and sensitivity of E_(MW)measured by the spectral frequency interval,which is important in the direct measurement of weak E_(MW).展开更多
文摘We prepare of ZnO quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report it’s working as ethanol sensor. The samples have been prepared via quenching technique where bulk ZnO powder is calcined at very high temperature of 1200°C and then quenched into ice cold polyvinylpyrrolidone solution. Thee acteiut the samples specimen have been characterized by using UV/VIS spectroscopy, X-ray diffracttion study and high resolution transmission electron microscopy (HRTEM). These studies indicate the sizes of quantum dots to be within 10 nm. The prepared quantum dot samples have been examined for ethanol vapour sensing by exploring the variation of their resistance with time at different operating temperatures. It has been revealed that ZnO quantum dots can sense ethanol at low operating (230°C) temperature with less response time.
基金financial support by the Hematology-Oncology Research Center,Tabriz University of Medical Sciences,under Grants No.93/5
文摘Low toxic graphene quantum dot（GQD） was synthesized by pyrolyzing citric acid in alkaline solution and characterized by ultraviolet-visible（UV-vis） spectroscopy,X-ray diffraction（XRD）,atomic force microscopy（AFM）,spectrofluorimetery and dynamic light scattering（DLS） techniques.GQD was used for electrode modification and electro-oxidation of doxorubicin（DOX） at low potential.A substantial decrease in the overvoltage（- 0.56 V） of the DOX oxidation reaction（compared to ordinary electrodes） was observed using GQD as coating of glassy carbon electrode（GCE）.Differential pulse voltammetry was used to evaluate the analytical performance of DOX in the presence of phosphate buffer solution（pH 4.0） and good limit of detection was obtained by the proposed sensor.Such ability of GQD to promote the DOX electron-transfer reaction suggests great promise for its application as an electrochemical sensor.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金Project supported by the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)
文摘A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
文摘In the new century, quantum technology has developed rapidly and has been applied in many fields. As an important aspect of the aerospace science, metrology and measuring science is a field which is influenced by the quantum technology dramatically. The new generation of the International System of Units will be redefined on the basis of the quantum theory. More and more new sensing techniques are developed taking into account quantum principles. In this paper, the influence of quantum technology on metrology and measuring science is introduced.
基金Project supported by the National Defense Pre-Research Foundation of China(Grant No.51311050301095)
文摘A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.
基金supported by the National High Technology Research and Development Program of China(863 Program)(No. 2006AA01Z208)Nataral Sci-ence Foundation of Jiangsu Province(No. BK2007236)Six Projects Sponsoring Talent Summits of Jiangsu Province(No. SJ207001)
文摘We analyze the development of quantum cryptography communication,including analyze the problems lie in the existent literatures and give the resolve methods according to these problems.Then discuss the quantum cryptography communication for wireless networks and also point out the shortcoming of current research and the future of quantum wireless networks.
基金Project supported by Beijing Natural Science Foundation(Grant No.1212014)the National Key Research and Development Program of China(Grant Nos.2017YFA0304900 and 2017YFA0402300)+4 种基金the National Natural Science Foundation of China(Grant Nos.11604334,11604177,and U2031125)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB08-3)the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Grant No.KF201807)the Fundamental Research Funds for the Central UniversitiesYouth Innovation Promotion Association CAS。
文摘We have theoretically and experimentally studied the dispersive signal of the Rydberg atomic electromagneticallyinduced transparency(EIT)Autler–Townes(AT)splitting spectra obtained using amplitude modulation of the microwave(MW)electric field.In addition to the two zero-crossing points interval△f_(zeros),the dispersion signal has two positive maxima with an interval defined as the shoulder interval△f_(sho),which is theoretically expected to be used to measure a much weaker MW electric field.The relationship of the MW field strength E_(MW)and△f_(sho)is experimentally studied at the MW frequencies of 31.6 GHz and 9.2 GHz respectively.The results show that△f_(sho)can be used to characterize the much weaker E_(MW)than that of△f_(zeros)and the traditional EIT–AT splitting interval△f_(m);the minimum E_(MW)measured by△f_(sho)is about 30 times smaller than that by△f_(m).As an example,the minimum E_(MW)at 9.2 GHz that can be characterized by△f_(sho)is 0.056 mV/cm,which is the minimum value characterized by the frequency interval using a vapor cell without adding any auxiliary fields.The proposed method can improve the weak limit and sensitivity of E_(MW)measured by the spectral frequency interval,which is important in the direct measurement of weak E_(MW).
