This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration o...This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET's simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region's interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.展开更多
通过数值模拟手段，用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R－G电流大小的影响规律。结果表明：无论在FD还是在PD SOI MOS器件中，界面陷阱密度是决定R－G电流峰值的主要因素，硅膜厚度和沟道掺杂浓度的影响却因器...通过数值模拟手段，用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R－G电流大小的影响规律。结果表明：无论在FD还是在PD SOI MOS器件中，界面陷阱密度是决定R－G电流峰值的主要因素，硅膜厚度和沟道掺杂浓度的影响却因器件的类型而导。为了精确地用R－G电流峰值确定界面陷阱的大小，器件参数的影响也必须包括在模型之中。展开更多
Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give ...Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics. For the tested device, an expected power law relationship of ANit ～ t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.展开更多
The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method dir...The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.展开更多
基金Sponsored by Motorola CPTL(Contract No:MSPSDDLCHINA-0004)
文摘This paper presents a simple novel technique-forward gated-diode R-G current method-to determine the lateral lightly-doped source/drain (S/D) region interface state density and effective surface doping concentration of the lightly-doped drain (LDD) N- MOSFET's simultaneously. One interesting result of the numerical analysis is the direct characterization of the interface state density and characteristic gate voltage values corresponding to LDD effective surface doping concentration. It is observed that the S/D N- surface doping concentration and corresponding region's interface state density are R-G current peak position and amplitude dependent, respectively. It is convincible that the proposed method is well suitable for the characterization of deep sub-micron MOSFET's in the current ULSI technology.
文摘通过数值模拟手段，用归一化的方法研究了界面陷阱、硅膜厚度和沟道掺杂浓度对R－G电流大小的影响规律。结果表明：无论在FD还是在PD SOI MOS器件中，界面陷阱密度是决定R－G电流峰值的主要因素，硅膜厚度和沟道掺杂浓度的影响却因器件的类型而导。为了精确地用R－G电流峰值确定界面陷阱的大小，器件参数的影响也必须包括在模型之中。
基金Sponsored by Motorola-Peking University Joint Project.Contract No.:MSPSDDLCHINA-0004
文摘Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics. For the tested device, an expected power law relationship of ANit ～ t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.
基金special funds of major state basic research projects (G20000365)
文摘The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.
