ZnO films on R-sapphire substrates are prepared and characterized by x-ray diffraction and scanning electron microscopy, which indicate that the thin films are well crystallized with （1120） texture. Love wave and Ra...ZnO films on R-sapphire substrates are prepared and characterized by x-ray diffraction and scanning electron microscopy, which indicate that the thin films are well crystallized with （1120） texture. Love wave and Rayleigh wave are used for fabrications of humidity sensors, which are excited in [1100] and [0001] directions of the （1120） ZnO piezoelectric films, respectively. The experimental results show that both kinds of sensors have good humidity response and repeatability, and the performances of the Love wave sensors are better than those of the Rayleigh wave sensors at room temperature. Moreover, the theoretical calculations of the mass sensitivity of the sensors are a/so carried out and the calculated results are in good agreement with the experimental measurements.展开更多
Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy a...Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy and secondary ion mass spectroscopy （SIMS）. Surface morphology, structural quality and related impurity incorpora- tion are very sensitive to the growth temperature. A significant difference of yellow luminescence is observed and attributed to the incorporation of carbon into GaN films, which is confirmed by SIMS analysis. Our results show that the sample with triangular-pit morphology has sample with pentagon-like pit morphology, which is significantly higher concentrations of oxygen than the other induced by the existence of an N-face in triangular pits.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11174142,11304160 and 11404147the National Basic Research Program of China under Grant No 2012CB921504+2 种基金the PAPD Projectthe Natural Science Foundation of Jiangsu Higher Education Institutions of China under Grant No 13KJB140008the Foundation of Nanjing University of Posts and Telecommunications under Grant No NY213018
文摘ZnO films on R-sapphire substrates are prepared and characterized by x-ray diffraction and scanning electron microscopy, which indicate that the thin films are well crystallized with （1120） texture. Love wave and Rayleigh wave are used for fabrications of humidity sensors, which are excited in [1100] and [0001] directions of the （1120） ZnO piezoelectric films, respectively. The experimental results show that both kinds of sensors have good humidity response and repeatability, and the performances of the Love wave sensors are better than those of the Rayleigh wave sensors at room temperature. Moreover, the theoretical calculations of the mass sensitivity of the sensors are a/so carried out and the calculated results are in good agreement with the experimental measurements.
基金Supported by the National Natural Science Foundation of China under Grant No 61204006the Fundamental Research Funds for the Central Universities under Grant No K50511250002
文摘Effects of the growth temperature on morphological and microstructural evolution of a-plane GaN films grown on r-plane sapphires by metal organic chemical vapor deposition are investigated by atomic force microscopy and secondary ion mass spectroscopy （SIMS）. Surface morphology, structural quality and related impurity incorpora- tion are very sensitive to the growth temperature. A significant difference of yellow luminescence is observed and attributed to the incorporation of carbon into GaN films, which is confirmed by SIMS analysis. Our results show that the sample with triangular-pit morphology has sample with pentagon-like pit morphology, which is significantly higher concentrations of oxygen than the other induced by the existence of an N-face in triangular pits.
基金supported by the National Natural Science Foundation of China(Grant No.11304160)the Natural Science Foundation of Jiangsu Higher Education Institutions of China(Grant No.13KJB140008)the Foundation of Nanjing University of Posts and Telecommunications(Grant No.NY213018)
文摘surface acoustic wave;;(1120)ZnO films;;R-sapphire;;finite element
