A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this ...A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect （including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect） and hysteresis effect perfectly.展开更多
The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer ...The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.展开更多
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)the Director Fund Project of Institute of Microelectronics of Chinese Academy of Sciences(No.Y1GZ241s01)
文摘A simple equivalent circuit model is proposed according to the device structure of reverse conducting insulated gate bipolar transistors （RC-IGBT）. Mathematical derivation and circuit simulations indicate that this model can explain the snap-back effect （including primary snap-back effect, secondary snap-back effect, and reverse snap-back effect） and hysteresis effect perfectly.
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘The RC-IGBT（reverse conducting insulated gate bipolar transistor） is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.
