This work presents the design of a novel static-triggered power-rail electrostatic discharge(ESD)clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is fir...This work presents the design of a novel static-triggered power-rail electrostatic discharge(ESD)clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is firstly discussed. Based on the discussion, a novel power-rail ESD clamp circuit utilizing the static ESD detection mechanism is proposed. By skillfully incorporating a thyristor delay stage into the trigger circuit(TC), the proposed circuit achieves the best ESD-conduction behavior while consuming the lowest leakage current(Ileak) at the normal bias voltage among all investigated circuits in this work. In addition, the proposed circuit achieves an excellent false-triggering immunity against fast power-up pulses. All investigated circuits are fabricated in a 65-nm CMOS process. Performance superiorities of the proposed circuit are fully verified by both simulation and test results. Moreover, the proposed circuit offers an efficient on-chip ESD protection scheme considering the worst discharge case in the utilized process.展开更多
基金supported by National Science and Technology Major Project of China(Grant No.2013ZX02303002)
文摘This work presents the design of a novel static-triggered power-rail electrostatic discharge(ESD)clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is firstly discussed. Based on the discussion, a novel power-rail ESD clamp circuit utilizing the static ESD detection mechanism is proposed. By skillfully incorporating a thyristor delay stage into the trigger circuit(TC), the proposed circuit achieves the best ESD-conduction behavior while consuming the lowest leakage current(Ileak) at the normal bias voltage among all investigated circuits in this work. In addition, the proposed circuit achieves an excellent false-triggering immunity against fast power-up pulses. All investigated circuits are fabricated in a 65-nm CMOS process. Performance superiorities of the proposed circuit are fully verified by both simulation and test results. Moreover, the proposed circuit offers an efficient on-chip ESD protection scheme considering the worst discharge case in the utilized process.
