采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件...采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件进行隔离 .在零偏压下 ,器件最大的量子效率为 1 2 %,半峰值全宽 (FWHM)为 5 .8nm,3 d B带宽为 3 0 MHz,暗电流为 2× 1 0 - 11A.通过对 MBE生长条件和器件结构的优化 ,将进一步提高该器件的性能 .展开更多
A GaAs-based micro-opto-electro-mechanical-systems(MOEMS) tunable resonant cavity enhanced(RCE) photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated.The single cantilever beam...A GaAs-based micro-opto-electro-mechanical-systems(MOEMS) tunable resonant cavity enhanced(RCE) photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated.The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector.The maximum and minimum peak quantum efficiency during the tuning are 36.9% and 30.8%,respectively.The maximum and minimum full-width-at-half-maximum (FWHM) are 20nm and 14nm,respectively.The dark current density is 7.46A/m2 without bias.展开更多
A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of ...A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.展开更多
A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of t...A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO 2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.展开更多
基金Major State Basic Research Program under Grant No.G2 0 0 0 0 36 6 0 3theNational Natural Science Foundation of China under Grant Nos.6 9896 2 6 0 +1 种基金6 99880 0 5 6 9976 0 0 7and6 978980 2
文摘采用配有 dc- N plasma N源的分子束外延 (MBE)技术在 Ga As衬底上生长制作了工作波长为 1 ,3 μm的 Ga In NAs量子阱 RCE探测器 .采用传输矩阵法对器件结构进行优化 .吸收区由三个 Ga In NAs量子阱构成 ,并用湿法刻蚀和聚酰亚胺对器件进行隔离 .在零偏压下 ,器件最大的量子效率为 1 2 %,半峰值全宽 (FWHM)为 5 .8nm,3 d B带宽为 3 0 MHz,暗电流为 2× 1 0 - 11A.通过对 MBE生长条件和器件结构的优化 ,将进一步提高该器件的性能 .
文摘A GaAs-based micro-opto-electro-mechanical-systems(MOEMS) tunable resonant cavity enhanced(RCE) photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated.The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector.The maximum and minimum peak quantum efficiency during the tuning are 36.9% and 30.8%,respectively.The maximum and minimum full-width-at-half-maximum (FWHM) are 20nm and 14nm,respectively.The dark current density is 7.46A/m2 without bias.
文摘A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
文摘A SiGe/Si multi-quantum wells resonant-cavity-enhanced(RCE) detector with high reflectivity bottom mirror is fabricated by a new method.The bottom mirror is deposited in the hole,which is etched from the backside of the sample by ethylenediamine-pyrocatechol-water(EPW) solution with the buried SiO 2 layer in SOI substrate as the etching-stop layer.Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2～1.5μm.The peak responsivity of the RCE detector at 1.344μm is 1.2mA/W and the full width at half maximum is 12nm.Compared with the conventional p-i-n photodetector,the responsivity of RCE detector is enhanced 8 times.
