期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
A charge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices 被引量:1
1
作者 李小刚 冯志成 +1 位作者 张正元 胡明雨 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第3期59-62,共4页
A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF (reduced surface field) structure. It agrees well with the results of nu... A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF (reduced surface field) structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. The optimal doping concentration (per unit area) of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model. 展开更多
关键词 resurf devices analytical model breakdown voltage device optimization
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部