A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface po...A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface potential and field distributions are derived.From this analysis,the optimum design condition for the maximum breakdown voltage is obtained.The dependence of the maximum breakdown voltage on the drift region length is examined and the relationship between the critical doping concentration and the front- and back- interface oxide layer thickness is discussed.The numerical simulation performed by the advanced semiconductor simulation tool,DESSIS-ISE,has been shown to support the analytical results.展开更多
A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF （reduced surface field） structure. It agrees well with the results of nu...A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF （reduced surface field） structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. The optimal doping concentration （per unit area） of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.展开更多
文摘A novel analytical model for the thin film silicon on insulator (TFSOI) reduced surface field (RESURF) devices has been proposed.Based on the 2-D Poisson equation solution,the analytical expressions for the surface potential and field distributions are derived.From this analysis,the optimum design condition for the maximum breakdown voltage is obtained.The dependence of the maximum breakdown voltage on the drift region length is examined and the relationship between the critical doping concentration and the front- and back- interface oxide layer thickness is discussed.The numerical simulation performed by the advanced semiconductor simulation tool,DESSIS-ISE,has been shown to support the analytical results.
文摘A new quite simple analytical model based on the charge allocating approach has been proposed to describe the breakdown property of the RESURF （reduced surface field） structure. It agrees well with the results of numerical simulation on predicting the breakdown voltage. Compared with the latest published analytical model, this model has a better accuracy according to the numerical simulation with simpler form. The optimal doping concentration （per unit area） of the epi-layer of the RESURF structures with different structure parameters has been calculated based on this model and the results show no significant discrepancy to the data gained by others. Additionally the physical mechanism of how the surface field is reduced is clearly illustrated by this model.
