A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this pap...A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this paper, the traditional seriesshunt configuration design was improved by introducing a suitably large DC bias resistor and leakage-preventing PMOS, together with the floating body technique. The performance of the RF switch is greatly improved. Furthermore, a new Ron × Coff testing method is also proposed. The size of this SPST RF switch is 0.2 mm2. This switch can be widely used for present 4 G and forthcoming 5 G mobile phone FEMs.展开更多
本文提出一种适用于RF SOI工艺MOS变容管行为表征的新模型。提出的模型考虑了SOI衬底的物理特性,并给出了解析提取衬底寄生网络模型参数的方法。采用提出的模型,精确预见了RF SOI MOS变容管器件特性,测量和模型仿真结果,在20 GHz频率范...本文提出一种适用于RF SOI工艺MOS变容管行为表征的新模型。提出的模型考虑了SOI衬底的物理特性,并给出了解析提取衬底寄生网络模型参数的方法。采用提出的模型,精确预见了RF SOI MOS变容管器件特性,测量和模型仿真结果,在20 GHz频率范围内得到很好的吻合。展开更多
The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost...The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.展开更多
基于0.18μm RF SOI CMOS工艺,提出了一种可广泛应用于无线通信系统中的低插入损耗高隔离度SOI射频开关电路。该电路利用SOI器件的特殊结构(隐埋氧化层BOX,高阻衬底)和特殊SOI器件(FB,BC,BT等),使电路采用的器件较之体硅CMOS器件具有更...基于0.18μm RF SOI CMOS工艺,提出了一种可广泛应用于无线通信系统中的低插入损耗高隔离度SOI射频开关电路。该电路利用SOI器件的特殊结构(隐埋氧化层BOX,高阻衬底)和特殊SOI器件(FB,BC,BT等),使电路采用的器件较之体硅CMOS器件具有更优的隔离性能,实现了降低插入损耗和增加隔离度的目的。该电路经过模拟仿真,在频率为2.4GHz时,插入损耗和隔离度分别为-1dB和40dB。展开更多
提出一种适用于反型层RF SOI MOS变容管行为表征模型。在BSIMSOI的基础上,模型采用简化的衬底模型和外围射频寄生模型来表征变容管的射频寄生效应,同时采用T、π互转的方式提出参数提取算法。模型最终应用到华虹宏力SOI工艺提供的不同栅...提出一种适用于反型层RF SOI MOS变容管行为表征模型。在BSIMSOI的基础上,模型采用简化的衬底模型和外围射频寄生模型来表征变容管的射频寄生效应,同时采用T、π互转的方式提出参数提取算法。模型最终应用到华虹宏力SOI工艺提供的不同栅指,每栅指长度为1.6μm、宽度为5μm的MOS变容管器件,并且在15 GHz以下,模型与测量数据的CV、QV以及S参数有较好的拟合。在高频情况下,模型既保证了精度又解决了参数提取困难等问题。展开更多
衬底寄生网络建模和参数提取,对RF SOI MOSFET器件输出特性的模拟有着非常重要的影响。考虑BOX层引入的体区和Si衬底隔离,将源、体和衬底短接接地,测试栅、漏二端口S参数的传统测试结构,无法准确区分衬底网络影响。提出一种改进的测试结...衬底寄生网络建模和参数提取,对RF SOI MOSFET器件输出特性的模拟有着非常重要的影响。考虑BOX层引入的体区和Si衬底隔离,将源、体和衬底短接接地,测试栅、漏二端口S参数的传统测试结构,无法准确区分衬底网络影响。提出一种改进的测试结构,通过把SOI MOSFET的漏和源短接为信号输出端、栅为信号输入端,测试栅、漏/源短接二端口S参数的方法,把衬底寄生在二端口S参数中直接体现出来,并开发出一种解析提取衬底网络模型参数的方法,支持SOI MOSFET衬底网络模型的精确建立。采用该方法对一组不同栅指数目的SOI MOSFET进行建模,测量和模型仿真所得S参数在20 GHz频段范围内得到很好吻合。展开更多
文摘A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this paper, the traditional seriesshunt configuration design was improved by introducing a suitably large DC bias resistor and leakage-preventing PMOS, together with the floating body technique. The performance of the RF switch is greatly improved. Furthermore, a new Ron × Coff testing method is also proposed. The size of this SPST RF switch is 0.2 mm2. This switch can be widely used for present 4 G and forthcoming 5 G mobile phone FEMs.
文摘The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.
文摘基于0.18μm RF SOI CMOS工艺,提出了一种可广泛应用于无线通信系统中的低插入损耗高隔离度SOI射频开关电路。该电路利用SOI器件的特殊结构(隐埋氧化层BOX,高阻衬底)和特殊SOI器件(FB,BC,BT等),使电路采用的器件较之体硅CMOS器件具有更优的隔离性能,实现了降低插入损耗和增加隔离度的目的。该电路经过模拟仿真,在频率为2.4GHz时,插入损耗和隔离度分别为-1dB和40dB。
文摘提出一种适用于反型层RF SOI MOS变容管行为表征模型。在BSIMSOI的基础上,模型采用简化的衬底模型和外围射频寄生模型来表征变容管的射频寄生效应,同时采用T、π互转的方式提出参数提取算法。模型最终应用到华虹宏力SOI工艺提供的不同栅指,每栅指长度为1.6μm、宽度为5μm的MOS变容管器件,并且在15 GHz以下,模型与测量数据的CV、QV以及S参数有较好的拟合。在高频情况下,模型既保证了精度又解决了参数提取困难等问题。
