Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and ele...Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A "blue shift" of UV absorption edge is observed with the increase of working press ure.展开更多
采用直流磁控溅射方法在石英基片上沉积铬薄膜.研究溅射功率、工作气压对铬薄膜结构、电学和光学性质的影响.利用X射线衍射仪、分光光度计和Van der Pauw方法分别检测薄膜的结构、光学和电学特性,利用德鲁特模型和薄膜的透射、反射光谱...采用直流磁控溅射方法在石英基片上沉积铬薄膜.研究溅射功率、工作气压对铬薄膜结构、电学和光学性质的影响.利用X射线衍射仪、分光光度计和Van der Pauw方法分别检测薄膜的结构、光学和电学特性,利用德鲁特模型和薄膜的透射、反射光谱计算薄膜的厚度和光学常数.结果表明:制备的铬薄膜为体心立方的多晶态;在工作气压0.6Pa一定时,随着溅射功率从40W增加到120W,沉积速率呈非线性增加,薄膜更加致密,电阻率连续降低,在550nm波长处,薄膜的折射率从3.52增大到功率80W时的最大值(3.88),尔后逐渐减小至3.69;消光系数从1.50逐渐增大到2.20;在溅射功率80W一定时,随着工作气压从0.4Pa增加到1.2Pa,沉积速率呈近线性降低,薄膜的电阻率逐渐变大,在550nm波长处,折射率从3.88减小到3.62,消光系数从2.55减小到1.48.展开更多
基金financially supported by the National Natural Science Foundation of China (No. 51571010)
文摘Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied. The highest ball mobility of 17.45 cmZ-V-l.s- 1 is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32×10^20 cm^-3 and the lowest resistivity of 0.001568 Ω.cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A "blue shift" of UV absorption edge is observed with the increase of working press ure.
文摘采用直流磁控溅射方法在石英基片上沉积铬薄膜.研究溅射功率、工作气压对铬薄膜结构、电学和光学性质的影响.利用X射线衍射仪、分光光度计和Van der Pauw方法分别检测薄膜的结构、光学和电学特性,利用德鲁特模型和薄膜的透射、反射光谱计算薄膜的厚度和光学常数.结果表明:制备的铬薄膜为体心立方的多晶态;在工作气压0.6Pa一定时,随着溅射功率从40W增加到120W,沉积速率呈非线性增加,薄膜更加致密,电阻率连续降低,在550nm波长处,薄膜的折射率从3.52增大到功率80W时的最大值(3.88),尔后逐渐减小至3.69;消光系数从1.50逐渐增大到2.20;在溅射功率80W一定时,随着工作气压从0.4Pa增加到1.2Pa,沉积速率呈近线性降低,薄膜的电阻率逐渐变大,在550nm波长处,折射率从3.88减小到3.62,消光系数从2.55减小到1.48.