Measurement of electronegativity during the E to H mode transition in a radio frequency inductively coupled Ar/O2 plasma

This paper presents the evolution of the electronegativity with the applied power during the E to H mode transition in a radio frequency(rf)inductively coupled plasma(ICP)in a mixture of Ar and O2.The densities of the negative ion and the electron,as well as their ratio,i.e.,the electronegativity,are measured as a function of the applied power by laser photo-detachment combined with a microwave resonance probe,under different pressures and O2 contents.Meanwhile,the optical emission intensities at Ar 750.4 nm and O 844.6 nm are monitored via a spectrograph.It was found that by increasing the applied power,the electron density and the optical emission intensity show a similar trench,i.e.,they increase abruptly at a threshold power,suggesting that the E to H mode transition occurs.With the increase of the pressure,the negative ion density presents opposite trends in the E-mode and the H-mode,which is related to the difference of the electron density and energy for the two modes.The emission intensities of Ar 750.4 nm and O 844.6 nm monotonously decrease with increasing the pressure or the O2 content,indicating that the density of high-energy electrons,which can excite atoms,is monotonically decreased.This leads to an increase of the negative ion density in the H-mode with increasing the pressure.Besides,as the applied power is increased,the electronegativity shows an abrupt drop during the E-to H-mode transition.

Discontinuity of mode transition and hysteresis in hydrogen inductively coupled plasma via a fluid model

A new type of two-dimensional self-consistent fluid model that couples an equivalent circuit module is used to in- vestigate the mode transition characteristics and hysteresis in hydrogen inductively coupled plasmas at different pressures, by varying the series capacitance of the matching box. The variations of the electron density, temperature, and the circuit electrical properties are presented. As cycling the matching capacitance, at high pressure both the discontinuity and hysteresis appear for the plasma parameters and the transferred impedances of both the inductive and capacitive discharge components, while at low pressure only the discontinuity is seen. The simulations predict that the sheath plays a determi- native role on the presence of discontinuity and hysteresis at high pressure, by influencing the inductive coupling efficiency of applied power. Moreover, the values of the plasma transferred impedances at different pressures are compared, and the larger plasma inductance at low pressure due to less collision frequency, as analyzed, is the reason why the hysteresis is not seen at low pressure, even with a wider sheath. Besides, the behaviors of the coil voltage and current parameters during the mode transitions are investigated. They both increase （decrease） at the E to H （H to E） mode transition, indicating an improved （worsened） inductive power coupling efficiency.

Spatial variation behaviors of argon inductively coupled plasma during discharge mode transition

A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E （capacitive discharge） to H （inductive discharge） mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial （2D an asymmetric profile in the E mode. Moreover, the at high pressure, but increase almost continuously at image） profile is symmetrical in the H mode, but the 2D image is electron density and emission intensity jump up discontinuously the E to H mode transition under low pressure.

Driving frequency effects on the mode transition in capacitively coupled argon discharges

A one-dimensional fluid model is employed to investigate the discharge sustaining mechanisms in the capacitively coupled argon plasmas, by modulating the driving frequency in the range of 40 kHz-613 MHz. The model incorporates the density and flux balance of electron and ion, electron energy balance, as well as Poisson＇s equation. In our simulation, the discharge experiences mode transition as the driving frequency increases, from the γ regime in which the discharge is maintained by the secondary electrons emitted from the electrodes under ion bombardment, to the a regime in which sheath oscillation is responsible for most of the electron heating in the discharge sustaining. The electron density and electron temperature at the centre of the discharge, as well as the ion flux on the electrode are figured out as a function of the driving frequency, to confirm the two regimes and transition between them. The effects of gas pressure, secondary electron emission coefficient and applied voltage on the discharge are also discussed.

Effect of a negative DC bias on a capacitively coupled Ar plasma operated at different radiofrequency voltages and gas pressures

The effect of a negative DC bias,|V_(dc)|,on the electrical parameters and discharge mode is investigated experimentally in a radiofrequency(RF)capacitively coupled Ar plasma operated at different RF voltage amplitudes and gas pressures.The electron density is measured using a hairpin probe and the spatio-temporal distribution of the electron-impact excitation rate is determined by phase-resolved optical emission spectroscopy.The electrical parameters are obtained based on the waveforms of the electrode voltage and plasma current measured by a voltage probe and a current probe.It was found that at a low|V_(dc)|,i.e.inα-mode,the electron density and RF current decline with increasing|V_(dc)|;meanwhile,the plasma impedance becomes more capacitive due to a widened sheath.Therefore,RF power deposition is suppressed.When|V_(dc)|exceeds a certain value,the plasma changes toα–γhybrid mode(or the discharge becomes dominated by theγ-mode),manifesting a drastically growing electron density and a moderately increasing RF current.Meanwhile,the plasma impedance becomes more resistive,so RF power deposition is enhanced with|V_(dc)|.We also found that the electrical parameters show similar dependence on|V_(dc)|at different RF voltages,andα–γmode transition occurs at a lower|V_(dc)|at a higher RF voltage.By increasing the pressure,plasma impedance becomes more resistive,so RF power deposition and electron density are enhanced.In particular,theα–γmode transition tends to occur at a lower|V_(dc)|with increase in pressure.

The Tuned Substrate Self-bias in a Radio-frequency Inductively Coupled Plasma

The radio frequency (rf) self-bias of the substrate in a rf inductively coupled plasma is controlled by means of varying the impedance of an external LC network inserted between the substrate and the ground. Experimental studies were done on the relations of the tuned substrate self-bias with varying discharge and external circuit parameters. Under a certain discharge gas pressure, the curves of tuned substrate self-bias Vtsb versus tuning capacitance Ct demonstrate jumps and hysteresises when rf discharge power is higher than a threshold. The hysteresis loop in terms of △Ctcrit1(= Ccrit1-Ccrit2, here,Ccrit1, Ccrit2 are critical capacitance magnitudes under which the tuned substrate self-bias jumps) decreases with increasing rf discharge power, while the maximum |Vtsbimn| is achieved in the middle discharge-power region. Under a constant discharge power |Vtsb min|, Ccrit1 and Ccrit2 achieve their minimums in the middle gas-pressure region. When the tuning capacitance is pre-set at a lower value, Ttsb varies slightly with gas-flow rate; in the case of tuning capacitance sufficiently approaching Ctcriti, Vtsb undergoes the jump and hysteresis with the changing gas-flow rate. By inserting a resistor R into the external network, the characteristics of Vtsb-Ct curves are changed with the reduced quality factor Q depending on resistance values. Based on inductive- and capacitive-coupling characteristics of inductively coupled plasma, the dependence of a plasma sheath on plasma parameters, and the impedance properties of the substrate branch, the observed results can be qualitatively interpreted.

A Numerical Study on Tuned Substrate Self-Bias in a Radio-Frequency Inductively Coupled Plasma

The tuned substrate self-bias in a radio-frequency inductively coupled plasma is controlled by varying the impedance of an external tuning LCR （inductor, capacitor and resistor） network inserted between the substrate and the ground. In experiments, it was found that the variation of the tuned substrate self-bias with the tuning capacitance demonstrated three features, namely, continuity, instability and bistability. In this paper, a numerical study is focused on the elucidation of the physical mechanisms underlying continuity and bistability. For the sake of simplicity and feasibility to include the key factors influencing the tuned substrate bias, the tedious calculation of inductive-coupling to obtain the plasma density axtd electron temperature is omitted, and discussion of the tuned substrate self-bias is made under the prescribed plasma density and electron temperature. On the other hand, the parameters influencing capacitive- coupling are retained in modeling the system with an equivalent circuit. It is found that multi-stable state appears when one of the parameters, such as the resistance in LCR, substrate area and plasma density, decreased to its critical value, or the rf voltage or electron temperature increased to the critical value individually. In the reverse cases, the tuned substrate self-bias varies continuously with the tuning capacitance.

Changes of the electron dynamics in hydrogen inductively coupled plasma

Changes of the electron dynamics in hydrogen （H2） radio-frequency （RF） inductively coupled plasmas are investigated using a hairpin probe and an intensified charged coupled device （ICCD）. The electron density, plasma emission intensity, and input current （voltage） are measured during the E to H mode transitions at different pressures. It is found that the electron density, plasma emission intensity, and input current jump up discontinuously, and the input voltage jumps down at the E to H mode transition points. And the threshold power of the E to H mode transition decreases with the increase of the pressure. Moreover, space and phase resolved optical emission spectroscopic measurements reveal that, in the E mode, the RF dynamics is characterized by one dominant excitation per RF cycle, while in the H mode, there are two excitation maxima within one cycle.

Influence of Discharge Parameters on Tuned Substrate Self-Bias in an Radio-Frequency Inductively Coupled Plasma

The tuned substrate self-bias in an rf inductively coupled plasma source is controlled by means of varying the impedance of an external LC network inserted between the substrate and the ground. The influencing parameters such as the substrate axial position, different coupling coils and inserted resistance are experimentally studied. To get a better understanding of the experimental results, the axial distributions of the plasma density, electron temperature and plasma potential are measured with an rf compensated Langmuir probe; the coil rf peak-to-peak voltage is measured with a high voltage probe. As in the case of changing discharge power, it is found that continuity, instability and bi-stability of the tuned substrate bias can be obtained by means of changing the substrate axial position in the plasma source or the inserted resistance. Additionally, continuity can not transit directly into bi-stability, but evolves via instability. The inductance of the coupling coil has a substantial effect on the magnitude and the property of the tuned substrate bias.

射频电感性耦合等离子体调谐基片自偏压特性

采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法,控制基片电极的射频自偏压。研究了调谐基片自偏压随外部调谐电容值的变化特征,得到了调谐基片射频自偏压随射频放电功率、气压的变化曲线。在一定放电参数区域内,调谐基片射频自偏压随调谐电容的变化曲线呈现跳变、双稳、迟滞现象。

射频感应耦合等离子体模式转变的发射光谱

通过改变气体流率、放电气压和气体组成,研究射频感应耦合放电等离子体(inductively coupled plasma,ICP)在圆柱型放电装置中E模到H模的转化规律.采用发射光谱诊断法,对419.8 nm氩原子谱线和434.8 nm氩离子谱线进行采集和分析,以表征E模到H模的转换功率.当放电气压为60 Pa时,E-H转换功率最小;在Ar中加入He对E-H转换功率几乎没有影响,而加入N2后,E-H转换功率发生了明显的改变;随着氩气流率的增加,E-H转换功率在不断减小.结果表明:射频感应耦合放电等离子体E模到H模的转化是一个突然变化的过程,转换功率会因不同的气体流率、放电气压和气体组成而变化.

ICP中放电模式转化过程中悬浮电位变化的多样性

研究了射频感性耦和等离子体(ICP)中悬浮电位在模式转化过程(E-H模式)的变化多样性。实验研究了射频功率在5W-1000W,气压在2Pa-50Pa的范围内,通过改变导电地面积、匹配网络、气压等参数,使用Z-Scan系统、电流电压探头以及静电探针进行测量的等离子体悬浮电位在模式转化过程中随功率变化的多种形式,同时给出了r型射频匹配网络的正负反馈区的区别,并对产生的多种现象进行了的理论解释。

轴向磁场下感应耦合放电模式转换的实验研究

为探究轴向磁场对纯Ar感应耦合等离子体放电模式转换的影响,设计并搭建一整套等离子体产生装置展开实验研究,引入阻抗分析法对放电模式转换进行判断,并得到了朗缪尔探针法的验证。实验发现,当气压为10Pa时,轴向磁场强度的增加使得E-H和H-E模式转换的阈值功率增大;同时,随着轴向磁场的增强,放电中心区域的电子密度不断降低。初步分析认为,这是由于带电粒子在洛伦兹力作用下做回旋运动,导致高能电子在垂直磁场方向上的碰撞减少,降低了电子密度以及感应耦合效率。进一步分析电子能量概率函数(EEPF)发现,在E模式下,轴向磁场对电子运动的约束作用更加明显,高能电子(>27eV)所占比例增多,电子能量分布更加均匀。

气压对微束射频容性放电模式调制的研究

微束射频容性放电在纳米晶体颗粒等离子体增强气相合成有着潜在的应用前景.本论文利用ICCD、单反相机、高压探头和电流探头等对微束射频容性放电特性进行了实验诊断研究.结果发现:在纯氩气微束射频放电中,随着气压的增加,放电从辉光放电模式向多通道丝状放电模式转换;在99%氩/1%氢混合气体微束射频放电中,丝状放电模式消失,而是从低气压全空间分布的辉光放电模式,到中等气压向轴心收缩的辉光放电模式,最后到高气压的“环状”辉光放电模式;而在纯氢气微束射频放电中,随着气压的增加,放电模式直接从全空间分布的辉光放电模式向“环状”辉光放电模式转换.最后通过射频电场中电子加热、趋肤效应和气体热传导的共同作用解释了产生不同放电模式的物理机制.

柱面天线射频感性耦合等离子体放电模式特性的实验研究

利用Z-scan、电流、电压探头,通过测量等离子体吸收功率、天线电流、电压、等离子体直流悬浮电位等多种参数,研究了匹配网络、天线耦合强度、导电地面积、气压等多种因素对E,H放电模式特性及模式转化行为的影响.基于Γ型阻抗匹配网络中串联电容对射频电源输出功率的影响,提出了E—H放电模式转化的正负反馈区概念.研究发现:在相同的其他放电条件下,处于正反馈区时等离子体放电易于产生跳变型模式转化,而且模式跳变的临界天线电流、回滞宽度、跳变临界功率、跳变功率差等参数均随阻抗匹配网络参数产生明显变化;在负反馈区内,模式转化过程趋于连续.由于阻抗匹配网络的影响,E—H模式的跳变电流并不是总大于H—E模式的跳变电流.在不同导电地面积、阻抗匹配网络、气压下,模式转化过程中等离子体直流悬浮电位的变化呈现多样性.