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Effect of Frequency and Power of Bias Applied to Substrate on Plasma Property of Very-High-Frequency Magnetron Sputtering 被引量:1
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作者 刘毅 叶超 +1 位作者 何海杰 王响英 《Plasma Science and Technology》 SCIE EI CAS CSCD 2015年第7期583-588,共6页
The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz(VHF) magnetron sputtering was investigated.The plasma properties include the ion velocity distribution funct... The effect of the frequency and power of the bias applied to the substrate on plasma properties in 60 MHz(VHF) magnetron sputtering was investigated.The plasma properties include the ion velocity distribution function(IVDF),electron energy probability function(EEPF),electron density ne,ion flux Γi,and effective electron temperature Teff.These parameters were measured by a retarding field energy analyzer and a Langmuir probe in the 60 MHz magnetron sputtering,assisted with 13.56 MHz or 27.12 MHz substrate bias.The 13.56 MHz substrate bias led to broadening and multi-peaks IVDFs,Maxwellian EEPFs,as well as high electron density,ion flux,and low electron temperature.The 27.12 MHz substrate bias led to a further increase of electron density and ion flux,but made the IVDFs narrow.Therefore,the frequency of the substrate bias was a possible way to control the plasma properties in VHF magnetron sputtering. 展开更多
关键词 VHF magnetron sputtering rf substrate bias ion energy distribution elec-tron energy distribution
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