The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.Acc...The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.According to analysis from the insertion and integrated loss, about 24 modules were integrated into the rated power. Thus, every module has a cooling flow of 2.1 L/min for RF heat load and power supply loss, which is very hard to achieve if no special consideration and techniques. A new thermal simulation method was introduced for thermal analysis of cooling plate through CST multi-physics suite,especially for temperature of power LDMOS transistor.Some specific measures carried out for the higher heat transfer were also presented in this paper.展开更多
依据欧洲电信标准协会(ETSI)提出的ETSI EN 300 401标准,设计了一种高性能DAB接收终端RF接收模块的设计方法,实现了DAB信号稳定同步和接收,达到了高灵敏度和低功耗,在移动速度达到200 km/h时能够稳定接收。该设计方法已经用于批量生产的...依据欧洲电信标准协会(ETSI)提出的ETSI EN 300 401标准,设计了一种高性能DAB接收终端RF接收模块的设计方法,实现了DAB信号稳定同步和接收,达到了高灵敏度和低功耗,在移动速度达到200 km/h时能够稳定接收。该设计方法已经用于批量生产的DAB接收终端中。展开更多
由N个相同H桥功率模块(H-bridge power module,HBPM)组成的传统级联H桥功率放大器(cascaded H-bridge power amplifier,CHB-PA)最多可输出2N+1的电平数,输出电平数直接影响功率放大器的正弦特性和保真性能。在级联HBPM数量相同的情况下...由N个相同H桥功率模块(H-bridge power module,HBPM)组成的传统级联H桥功率放大器(cascaded H-bridge power amplifier,CHB-PA)最多可输出2N+1的电平数,输出电平数直接影响功率放大器的正弦特性和保真性能。在级联HBPM数量相同的情况下,首先提出了一种非对称级联多电平功率放大器(asymmetrical cascaded multilevel power amplifier,ACM-PA);其次,为了与传统CHB-PA有相同HBPM数目的ACM-PA,提出一种虚拟载波移相脉宽调制(virtual carrier phase shift pulse width modulation,VCPS-PWM)策略,将输出电平数提高到6N-3;最后,通过仿真对比验证了所提出的ACM-PA和VCPS-PWM可以显著提高输出电平数,降低负载电流的总谐波失真,提高功率放大器的保真性能。展开更多
A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates in...A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.展开更多
This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high effici...This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.展开更多
基金supported by the ‘‘strategic priority research program’’ of the Chinese Academy of Sciences(No.XDA030205)
文摘The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.According to analysis from the insertion and integrated loss, about 24 modules were integrated into the rated power. Thus, every module has a cooling flow of 2.1 L/min for RF heat load and power supply loss, which is very hard to achieve if no special consideration and techniques. A new thermal simulation method was introduced for thermal analysis of cooling plate through CST multi-physics suite,especially for temperature of power LDMOS transistor.Some specific measures carried out for the higher heat transfer were also presented in this paper.
文摘A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.
文摘This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.
