Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1...Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.展开更多
Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1...Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1 at various IR irradiation temperatures T1 （from room temperature to 400?℃）. The refractive index,deposited ratio,and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1,the crystalline seeds appear at T1=300?℃,and the films are amorphous at the temperature ranging from 27?℃ to 400?℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （R p-v ） and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate （fo2）,and the mole ratio of Sn/In in the samples reduces with an increase in fo2.展开更多
本文阐述了一种超低功耗S-OOK调制的超宽带短脉冲(I mpul se Radi o Ul t r a-Wi de Band,I R-UWB)射频发射机(RF Tr ans mi t t er)芯片。本发射机芯片基于一种新型的基于自同步的S-OOK调制方式,有效解决了由于同步所带来的额外电路开...本文阐述了一种超低功耗S-OOK调制的超宽带短脉冲(I mpul se Radi o Ul t r a-Wi de Band,I R-UWB)射频发射机(RF Tr ans mi t t er)芯片。本发射机芯片基于一种新型的基于自同步的S-OOK调制方式,有效解决了由于同步所带来的额外电路开销。通过开关切换片内电源电压节省功耗,本I R-UWB发射机控制功耗较大的高频振荡器和输出缓冲器周期间歇性地以极短时间工作,极大地节省了发射机的功耗。通过新型的自校准偏置电路,使得本发射机产生的基带超短脉冲可以有效抵抗工艺、温度的变化。整个I R-UWB发射机芯片DC能量消耗为65p J,发射每个脉冲的能量消耗为184μW/PRF,发射机输出能量效率为10.4%,是一款超低功耗、高集成度的射频发射机芯片。展开更多
基金This work was financially supported by the National Defence Science Council of China (NO. 5141002040JW0504) and the Excellent Ph.D Thesis Foundation of Huazhong University of Science and Technology (No. HUST2004-39).
文摘Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.
文摘Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1∶1 at various IR irradiation temperatures T1 （from room temperature to 400?℃）. The refractive index,deposited ratio,and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1,the crystalline seeds appear at T1=300?℃,and the films are amorphous at the temperature ranging from 27?℃ to 400?℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （R p-v ） and the surface microstructure of ITO thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate （fo2）,and the mole ratio of Sn/In in the samples reduces with an increase in fo2.
文摘本文阐述了一种超低功耗S-OOK调制的超宽带短脉冲(I mpul se Radi o Ul t r a-Wi de Band,I R-UWB)射频发射机(RF Tr ans mi t t er)芯片。本发射机芯片基于一种新型的基于自同步的S-OOK调制方式,有效解决了由于同步所带来的额外电路开销。通过开关切换片内电源电压节省功耗,本I R-UWB发射机控制功耗较大的高频振荡器和输出缓冲器周期间歇性地以极短时间工作,极大地节省了发射机的功耗。通过新型的自校准偏置电路,使得本发射机产生的基带超短脉冲可以有效抵抗工艺、温度的变化。整个I R-UWB发射机芯片DC能量消耗为65p J,发射每个脉冲的能量消耗为184μW/PRF,发射机输出能量效率为10.4%,是一款超低功耗、高集成度的射频发射机芯片。
