The current-voltage（I-V） characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, an...The current-voltage（I-V） characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, and the resulting curves are all similar in shape. When a voltage of about 560V is applied to the cBN crystal, the emitted light is visible to the naked eye in a dark room. We explain these phenomena by the space charge limited current and the electronic transition between the X and Г valleys of the conduction band.展开更多
Transient current (I-t), current-voltage (I-V) characteristics, and dc conductivity ln(σ) for bisphenol A corn-cobs (BPACC) sample were investigated. At higher temperatures, I-V characteristics reveal that the dc cur...Transient current (I-t), current-voltage (I-V) characteristics, and dc conductivity ln(σ) for bisphenol A corn-cobs (BPACC) sample were investigated. At higher temperatures, I-V characteristics reveal that the dc cur-rent for the sample undergoes two regions one due to ohmic conduction and the other has been attributed to Space charge limited current (SCLC). The activation energy (Ea), the electron mobility μo), effective electron mobility ?μe), the concentration of the charge’s concentrations in conduction band, trapping factor (θ) and the trap concentration (Nt) were calculated. At lower temperatures, the dc current exhibits a peculiar behavior for I-t regime and I-V characteristics. Transient current of BPACC sample exhibits approximately constant value at constant electric field and it has saturation value for I-V characteristics. The attained results suggest strongly the applicability of this material in the electrical applications.展开更多
An In0.53Ga0.47As/AlAs resonant tunneling diode （RTD） with a high doping emitter is designed and fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio （PVCR） of more than 40 ...An In0.53Ga0.47As/AlAs resonant tunneling diode （RTD） with a high doping emitter is designed and fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio （PVCR） of more than 40 at room temperature, with a peak current density of 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit. The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications.展开更多
文摘The current-voltage（I-V） characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, and the resulting curves are all similar in shape. When a voltage of about 560V is applied to the cBN crystal, the emitted light is visible to the naked eye in a dark room. We explain these phenomena by the space charge limited current and the electronic transition between the X and Г valleys of the conduction band.
文摘Transient current (I-t), current-voltage (I-V) characteristics, and dc conductivity ln(σ) for bisphenol A corn-cobs (BPACC) sample were investigated. At higher temperatures, I-V characteristics reveal that the dc cur-rent for the sample undergoes two regions one due to ohmic conduction and the other has been attributed to Space charge limited current (SCLC). The activation energy (Ea), the electron mobility μo), effective electron mobility ?μe), the concentration of the charge’s concentrations in conduction band, trapping factor (θ) and the trap concentration (Nt) were calculated. At lower temperatures, the dc current exhibits a peculiar behavior for I-t regime and I-V characteristics. Transient current of BPACC sample exhibits approximately constant value at constant electric field and it has saturation value for I-V characteristics. The attained results suggest strongly the applicability of this material in the electrical applications.
基金Project supported by the National Fundamental Research Program of China(No.2009CB320207)
文摘An In0.53Ga0.47As/AlAs resonant tunneling diode （RTD） with a high doping emitter is designed and fabricated using air bridge technology. The RTD exhibits a high peak-to-valley current ratio （PVCR） of more than 40 at room temperature, with a peak current density of 24 kA/cm2. The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit. The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications.
