Room-temperature ferromagnetism induced by Cu vacancies in Cu_x(Cu_2O)_(1-x) granular films

Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.

Defect types and room-temperature ferromagnetism in undoped rutile TiO_2 single crystals

Room-temperature ferromagnetism has been experimentally observed in annealed rutile TiO2 single crystals when a magnetic field is applied parallel to the sample plane.By combining X-ray absorption near the edge structure spectrum and positron annihilation lifetime spectroscopy,Ti^3＋-V O defect complexes（or clusters） have been identified in annealed crystals at a high vacuum.We elucidate that the unpaired 3d electrons in Ti^3＋ ions provide the observed room-temperature ferromagnetism.In addition,excess oxygen ions in the TiO2 lattice could induce a number of Ti vacancies which obviously increase magnetic moments.

Toward intrinsic room-temperature ferromagnetism in two-dimensional semiconductors

Two-dimensional (2D) ferromagnetic semiconductors have been recognized as the most promising candidates for next-generation low-cost, high-performance and nano-scale spintronic applications such as spin field-effect transistors and quantum computation/communication. However, as one of the 125 important scientific issues raised by Science journal in 2005 that "is it possible to create magnetic semiconductors that work at room temperature?", how to achieve a feasible ferromagnetic semiconductor with high Curie temperature is still a long-standing challenge despite of tremendous efforts have been devoted in this field since 1960s. The recent discovery of 2D ferromagnetic semiconductors Cr2Ge2Te6 and CrI3 has evoked new research interests in 2D intrinsic ferromagnetic semiconductors. But the low Curie temperature (<45 K) of these materials is still badly hindering their industrial applications.

Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires

Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^（3＋）-vacancy complexes through percolation-bound magnetic polarons.

Defect induced room-temperature ferromagnetism and enhanced photocatalytic activity in Ni-doped ZnO synthesized by electrodeposition

Zn0.90Ni0.10O nanoparticles have been synthesized by single-bath two-electrode electrodeposition at constant voltage. X-ray diffraction, UV vis and photoluminescence studies reveal that a single-phase polycrystalline hcp wurtzite crystal structure of ZnO is evolved. The material consists of a large number of defects such as oxygen vacancy (Ov) and zinc interstitial (Zi). The magnetization study reveals that the sample exhibits room-temperature global ferromagnetism and the ferromagnetic ordering seems to be defect induced via bound magnetic polaron mechanism, and double exchange is also expected to have played role. Interesting optoelectronic properties have been found in the synthesized sample and the material seems to be a potential candidate to be used as a UV sensor. Such a transition metal doped ZnO based dilute magnetic semiconducting system exhibiting room-temperature ferromagnetism is likely to be first of its kind in the sense that such materials have not yet been reported to be synthesized by the simple method of electrodeposition to the best of our knowledge on the basis of ample literature review.

Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic devices.However,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition strategy.CCN exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane piezoelectricity.Moreover,we acquired clear evidences of ferromagnetic behavior at room temperature.Extensive structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and piezoelectricity.As a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room temperature.The addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

Defect-manipulated magnetoresistance and above-room-temperature ferromagnetism in two-dimensional BaNi_(2)V_(2)O_(8)

The intricate correlation between multiple degrees of freedom and physical properties is a fascinating area in solid state chemistry and condensed matter physics.Here,we report a quantum-magnetic system BaNi_(2)V_(2)O_(8)(BNVO),in which the spin correlation was modulated by unusual oxidation state,leading to different magnetic behavior.The BNVO was modified with topochemical reduction(TR)to yield TR-BNVO with partially reduced valance state of Ni^(+)in the two-dimensional NiO_(6)-honeycomb lattice.Accordingly,the antiferromagnetic order is suppressed by the introduction of locally interposed Ni^(+)and oxygen vacancies,resulting in a ferromagnetic ground state with the transition temperature up to 710 K.A positive magnetoresistance(7.5%)was observed in the TR-BNVO at 40 K under 7 T.These findings show that topological reduction is a powerful approach to engineer low-dimensional materials and accelerate the discovery of new quantum magnetism.

Giant Magneto-Optical Effect in van der Waals Room-Temperature Ferromagnet Fe_(3)GaTe_(2)

The discovery of ferromagnetic two-dimensional(2D)van der Waals(vdWs)materials provides an opportunity to explore intriguing physics and to develop innovative spin electronic devices.However,the main challenge for practical applications of vd Ws ferromagnetic crystals lies in the weak intrinsic ferromagnetism and small perpendicular magnetic anisotropy(PMA)above room temperature.Here,we report the intrinsic vd Ws ferromagnetic crystal Fe_(3)GaTe_(2),synthesized by the self-flux method,exhibiting a Curie temperature(TC)of 370 K,a high saturation magnetization of 33.47 emu/g,and a large PMA energy density of approximately 4.17×10^(5)J/m^(3).Furthermore,the magneto-optical effect is systematically investigated in Fe_(3)GaTe_(2).The doubly degenerate E_(2g)(Γ)mode reverses the helicity of incident photons,indicating the existence of pseudoangular-momentum(PAM)and chirality.Meanwhile,the non-degenerate non-chiral A_(1g)(Γ)phonon exhibits a significant magneto-Raman effect under an external out-of-plane magnetic field.These results lay the groundwork for studying phonon chirality and magneto-optical phenomena in 2D magnetic materials,providing the feasibility for further fundamental research and applications in spintronic devices.

Room-temperature ferromagnetism enhancement in Fe-doped VSe2nanosheets synthesized by a chemical method

Two-dimensional(2 D)few-layerVSe_(2),V_(1-x)Fe_(x)Se_(2) nanosheets have been synthesized by a hightemperature organic solution-phase method. The thickness of VSe_(2) nanosheets can be tuned from 12 to 5 layers by decreasing the precursor concentrations. The few-layer VSe_(2) nanosheets show the room-temperature ferromagnetism. The coercivity and magnetization reach 0.024 T and 0.036 mA·m^(2)·g^(-1) at room temperature. The chargedensity wave behavior is also confirmed in VSe_(2) by the hysteresis loops and zero-field-cooling curve. V_(1-x)Fe_(x)Se_(2) nanosheets can be obtained by doping Fe(acac)3 in the reaction process. The room-temperature coercivity and magnetization of V_(0.8)Fe_(0.2)Se_(2) nanosheets are 5 times higher than those of the pure VSe_(2) nanosheets without destroying the structures. The enhancement of magnetization is due to the coupling interaction of 3 d orbits between V and Fe atoms. Higher Fe concentration is beneficial to improve the coercivity, which is attributed to the formation of the second phase Fe3 Se4. This simple chemical preparation method can be extended to prepare the other 2 D materials.

Near room-temperature ferromagnetism in air-stable twodimensional Cr_(1−x)Te grown by chemical vapor deposition

Identifying air-stable two-dimensional(2D)ferromagnetism with high Curie temperature(T_(c))is highly desirable for its potential applications in next-generation spintronics.However,most of the work reported so far mainly focuses on promoting one specific key factor of 2D ferromagnetism(T_(c)or air stability),rather than comprehensive promotion of both of them.Herein,ultrathin Cr_(1-x)Te crystals grown by chemical vapor deposition(CVD)show thickness-dependent T_(c)up to 285 K.The out-of-plane ferromagnetic order is well preserved down to atomically thin limit(2.0 nm),as evidenced by anomalous Hall effect observed in non-encapsulated samples.Besides,the CVD-grown Cr_(1-x)Te nanosheets present excellent ambient stability,with no apparent change in surface roughness or electrical transport properties after exposure to air for months.Our work provides an alternative platform for investigation of intrinsic 2D ferromagnetism and development of innovative spintronic devices.

Amorphous nonstoichiometric oxides with tunable room-temperature ferromagnetism and electrical transport

Material functionalities strongly depend on the stoichiometry,crystal structure,and homogeneity.Here we demonstrate an approach of amorphous nonstoichiometric inhomogeneous oxides to realize tunable ferromagnetism and electrical transport at room temperature.In order to verify the origin of the ferromagnetism,we employed a series of structural,chemical,and electronic state characterizations.Combined with electron microscopy and transport measurements,synchrotron-based grazing incident wide angle X-ray scattering,soft X-ray absorption and circular dichroism clearly reveal that the roomtemperature ferromagnetism originates from the In0.23Co0.77O1-v,amorphous phase with a large tunable range of oxygen vacancies.The room-temperature ferromagnetism is tunable from a high saturation magnetization of 500 emu cm-3 to below 25 emu cm-3,with the evolving electrical resistivity from5×103μΩ cm to above 2.5×105 μΩ cm.Inhomogeneous nano-crystallization emerges with decreasing oxygen vacancies,driving the system towards non-ferromagnetism and insulating regime.Our work unfolds the novel functionalities of amorphous nonstoichiometric inhomogeneous oxides,which opens up new opportunities for developing spintronic materials with superior magnetic and transport properties.

Development of Intrinsic Room-Temperature 2D Ferromagnetic Crystals for 2D Spintronics

Two-dimensional(2D)ferromagnetic crystals with fascinating optical and electrical properties are crucial for nanotechnology and have a wide variety of applications in spintronics.However,low Curie temperatures of most 2D ferromagnetic crystals seriously hinder their practical applications,thus searching for intrinsic roomtemperature 2D ferromagnetic crystals is of great importance for development of information technology.Fortunately,progresses have been achieved in the last few years.Here we review recent advances in the field of intrinsic room-temperature 2D ferromagnetic crystals and introduce their applications in spintronic devices based on van der Waals heterostructures.Finally,the remaining challenge and future perspective on the development direction of intrinsic room-temperature 2D ferromagnetic crystals for 2D spintronics and van der Waals spintronics are briefly summarized.

Possible Room-Temperature Ferromagnetic Semiconductors

Magnetic semiconductors integrate the dual characteristics of magnets and semiconductors.It is difficult to manufacture magnetic semiconductors that function at room temperature.Here,we review a series of our recent theoretical predictions on room-temperature ferromagnetic semiconductors.Since the creation of two-dimensional(2D)magnetic semiconductors in 2017,there have been numerous developments in both experimental and theoretical investigations.By density functional theory calculations and model analysis,we recently predicted several2D room-temperature magnetic semiconductors,including CrGeSe_(3)with strain,CrGeTe_(3)/PtSe_(2) heterostructure,and technetium-based semiconductors(TcSiTe_(3),TcGeSe_(3),and TcGeTe_(3)),as well as PdBr_(3)and PtBr_(3)with a potential room-temperature quantum anomalous Hall effect.Our findings demonstrated that the Curie temperature of these 2D ferromagnetic semiconductors can be dramatically enhanced by some external fields,such as strain,construction of heterostructure,and electric field.In addition,we proposed appropriate doping conditions for diluted magnetic semiconductors,and predicted the Cr doped GaSb and InSb as possible room-temperature magnetic semiconductors.

Mn-doped SiGe thin films grown by UHV/CVD with room-temperature ferromagnetism and high hole mobility

In this work,silicon-germanium(SiGe)thin films are epitaxially grown on Ge substrates by ultra-high vacuum chemical vapor deposition and then doped with Mn element by ion-implantation and subsequent rapid thermal annealing(RTA).The characterizations show that the epitaxial SiGe thin films are single-crystalline with uniform tensile strain and then become polycrystalline after the ion implantation and following RTA.The magnetization measurements indicate that the annealed thin films exhibit Mn concentration-dependent ferromagnetism up to 309 K and the X-ray magnetic circular dichroism characterizations reveal the spin and orbital magnetic moments from the substitutional Mn element.To minimize the influence of anomalous Hall effect,magneto-transport measurements at a high magnetic field up to 31 T at 300 K are performed to obtain the hole mobility,which reaches a record-high value of~1230 cm^(2)V^(-1)s^(-1),owing to the crystalline quality and tensile strain-induced energy band modulation of the samples.The first demonstration of Mn-doped SiGe thin films with roomtemperature ferromagnetism and high carrier mobility may pave the way for practical semiconductor spintronic applications.

The room temperature ferromagnetism in highly strained twodimensional magnetic semiconductors

In spintronics,it is still a challenge in experiments to realize the ferromagnetic semiconductors with Curie temperature Tc above room temperature.In 2017,the successful synthesis of two-dimensional(2D)van der Waals ferromagnetic semiconductors,including the monolayer CrI3 with Tc=45 K[1]and the bilayer Cr2Ge2Te6 with Tc=28 K[2]in experiments,has attracted extensive attention in the 2D ferromagnetic semiconductors.One of the key problems is to find suitable 2D magnetic semiconductors,which can have room-temperature operation as required in applications.

Recent Advances in Pure-Organic Host-Guest Room-Temperature Phosphorescence Systems Toward Bioimaging

Organic room-temperature phosphorescence(RTP)materials have garnered considerable attention in the fields of biosensing,optoelectronic devices,and anticounterfeiting because of their substantial Stokes shifts,tunable emission wavelengths,and prolonged lifetimes.These materials offer remarkable advantages for biological imaging applications by effectively reducing environmental autofluorescence and enhancing imaging resolution.Recently,host-guest systems have been employed as efficient approaches to fabricate pure-organic RTP materials for bioimaging,providing benefits such as controllable preparation and flexible modulation.Consequently,an increasing number of corresponding studies are being reported;however,a comprehensive systematic review is still lacking.Therefore,we summarize recent advances in the development of pureorganic RTP materials using host-guest systems with regard to bioimaging,including rigid matrices and sensitization.The challenge and potential of RTP for biological imaging are also proposed to promote the biomedical applications of organic RTP materials with excellent optical properties.

High-temperature ferromagnetism and strongπ-conjugation feature in two-dimensional manganese tetranitride

Two-dimensional(2D)magnetic materials have attracted tremendous research interest because of the promising application in the next-generation microelectronic devices.Here,by the first-principles calculations,we propose a twodimensional ferromagnetic material with high Curie temperature,manganese tetranitride MnN4monolayer,which is a square-planar lattice made up of only one layer of atoms.The structure is demonstrated to be stable by the phonon spectra and the molecular dynamic simulations,and the stability is ascribed to theπ–d conjugation betweenπorbital of N=N bond and d orbital of Mn.More interestingly,the MnN_(4)monolayer displays robust 2D ferromagnetism,which originates from the strong exchange couplings between Mn atoms due to theπ–d conjugation.The high critical temperature of 247 K is determined by solving the Heisenberg model using the Monte Carlo method.

Spontaneous isospin polarization and quantum Hall ferromagnetism in a rhombohedral trilayer graphene superlattice

Moiré superlattices in van der Waals heterostructures have recently attracted enormous interests, due to the highly controllable electronic correlation that gives rise to superconductivity, ferromagnetism, and nontrivial topological properties. To gain a deep understanding of such exotic properties, it is essential to clarify the broken symmetry between spin and valley flavors which universally exists in these ground states. Here in a rhombohedral trilayer graphene crystallographically aligned with a hexagonal boron nitride, we report various kinds of symmetry-breaking transition tuned by displacement fields(D) and magnetic fields:(ⅰ) While it is well known that a finite D can enhance correlation to result in correlated insulators at fractional fillings of a flat band, we find the correlation gap emerges before the flavor is fully filled at a positive D, but the sequence is reversed at a negative D.(ⅱ) Around zero D, electronic correlation can be invoked by narrow Landau levels, leading to quantum Hall ferromagnetism that lifts all the degeneracies including not only spin and valley but also orbital degrees of freedom. Our result unveils the complication of transitions between symmetry-breaking phases, shedding light on the mechanisms of various exotic phenomena in strongly correlated systems.

Enhanced ferromagnetism and conductivity of ultrathin freestanding La_(0.7)Sr_(0.3)MnO_(3)membranes

We report a universal method to transfer freestanding La_(0.7)Sr_(0.3)MnO_(3)membranes to target substrates.The 4-unit-cell-thick freestanding La_(0.7)Sr_(0.3)MnO_(3)membrane exhibits the enhanced ferromagnetism,conductivity and out-of-plane magnetic anisotropy,which otherwise shows nonmagnetic/antiferromagnetic and insulating behavior due to the intrinsic epitaxial strain.This work facilitates the promising applications of ultrathin freestanding correlated oxide membranes in electronics and spintronics.

Room-Temperature Phosphorescence and Lifetime of Fossil Resins (Amber) from Dominican Republic, Mexico, Baltic Sea, Myanmar, and Fushun, China

Amber can emit room temperature phosphorescence(RTP)under the well-known 365 nm fluorescence ultraviolet light.This paper is devoted to the phosphorescence study of 20 pieces of amber materials from the Dominican Republic,Mexico,Baltic sea,Myanmar,and Fushun,China.The results show that amber from the same geographic origin has similar shape in phosphorescence spectra.However,the shape of the amber phosphorescence spectra varies depending on their different localities.Burmite(amber from Myanmar)and Fushun amber have a bright yellow phosphorescence with a long lifetime,while the Dominican and Mexican ones are weaker and last shorter.The irradiation of Baltic amber becomes faint or even inert.Phosphorescence spectral Gaussian fitting results suggest an emission maximum near 550 nm in most amber samples.Their phosphorescence lifetime,analyzed through the exponential function fitting,is up to 1 second in Burmite and Fushun samples,shorter in the Dominican and Mexican ones,about 0.230 s,and the shortest in Baltic amber,close to 0.151 s.These variations of phosphorescence lifetime and intensity are related to the relative geological ages of these amber.It indicated that the phosphorescence agent was probably formed during the long geological time.While the anomaly occurred in Baltic amber,the only one found in a sea secondary deposit form,it demonstrated that the terrestrial geological environment these amber preserved has prevented the phosphorescence agent to be deactivated.