Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and g...Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and green electronics.Resistive random access memory(RRAM)is a promising candidate for next-generation memory.In this context,biocompatible l-carrageenan(l-car),extracted from natural seaweed,is introduced for the fabrication of RRAM devices(Ag/l-car/Pt).Taking advantage of the complexation processes between the functional groups(C–O–C,C–O–H,et al.)and Ag metal ions,a lower migration barrier of Ag ions and a high-speed switching(22.2 ns for SET operation/26 ns for RESET operation)were achieved,resulting in an ultralow power consumption of 56 fJ.And the prepared Ag/l-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexibility.In addition,thanks to the hydrophilic groups of l-car molecule,the RRAM devices can be rapidly dissolved in deionized(DI)water within 13 minutes,showing excellent transient characteristics.This work demonstrates that l-car based RRAM devices have great potential for applications in secure storage applications,flexible electronics and transient electronics.展开更多
In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve...In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlinear issue of the RRAM cells;(2)a two-stage offset-cancelled current sense amplifier(TSOCC-SA)with only two capacitors achieves a double sensing margin and a high tolerance of device mismatch.The simulation results in 28 nm CMOS technology show that the HRRG can provide a read reference that tracks PVT variations and solves the nonlinear issue of the RRAM cells.The proposed TSOCC-SA can tolerate over 64% device mismatch.展开更多
阻变存储器(resistive random access memory,RRAM)作为未来一种高性能的非挥发性存储器,具有面积小、操作电压低、兼容性好等特点.但是,在高集成存储器和频繁的写操作下,热串扰问题会严重影响RRAM的保持特性.严重情况下,热串扰问题甚...阻变存储器(resistive random access memory,RRAM)作为未来一种高性能的非挥发性存储器,具有面积小、操作电压低、兼容性好等特点.但是,在高集成存储器和频繁的写操作下,热串扰问题会严重影响RRAM的保持特性.严重情况下,热串扰问题甚至会造成一系列的错误翻转.因此,本文引入了一种高效的奇偶重排编码算法(parity rearrangement coding scheme,PRCoder)来有效缓解热串扰对RRAM的影响,并在算法层和电路层上分别进行设计与仿真.试验结果表明,PRCoder算法平均降低了32.7%的误翻转率,并同时只会在每一个存储行带来1bit的额外开销.此外,PRCoder仅仅带来0.3%的性能增加和0.008%的面积增加.展开更多
Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability...Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.展开更多
In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductiv...In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.展开更多
基金supported financially by the National Key Research and Development Program of China(Grant No.2023YFB4402301)the National Science Fund for Distinguished Young Scholars(Grant No.52025022)+3 种基金the National Natural Science Foundation of China(Grant Nos.U19A2091,62004016,51732003,52072065,11974072,52372137,and 52272140)the“111”Project(Grant No.B13013)the Fundamental Research Funds for the Central Universities(Grant Nos.2412022QD036 and 2412023YQ004)the funding from Jilin Province(Grant Nos.20210201062GX,20220502002GH,20230402072GH,20230101017JC,and 20210509045RQ)。
文摘Transient memories,which can physically disappear without leaving traceable remains over a period of normal operation,are attracting increasing attention for potential applications in the fields of data security and green electronics.Resistive random access memory(RRAM)is a promising candidate for next-generation memory.In this context,biocompatible l-carrageenan(l-car),extracted from natural seaweed,is introduced for the fabrication of RRAM devices(Ag/l-car/Pt).Taking advantage of the complexation processes between the functional groups(C–O–C,C–O–H,et al.)and Ag metal ions,a lower migration barrier of Ag ions and a high-speed switching(22.2 ns for SET operation/26 ns for RESET operation)were achieved,resulting in an ultralow power consumption of 56 fJ.And the prepared Ag/l-car/Pt RRAM devices also revealed the capacities of multilevel storage and flexibility.In addition,thanks to the hydrophilic groups of l-car molecule,the RRAM devices can be rapidly dissolved in deionized(DI)water within 13 minutes,showing excellent transient characteristics.This work demonstrates that l-car based RRAM devices have great potential for applications in secure storage applications,flexible electronics and transient electronics.
基金supported in part by the National Key R&D Program of China under Grant No.2019YFB2204800in part by the Major Scientific Research Project of Zhejiang Lab(Grant No.2019KC0AD02)+1 种基金in part by the National Natural Science Foundation of China under Grants 61904200the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant No.XDB44000000。
文摘In this work,two process-variation-tolerant schemes for a current-mode sense amplifier(CSA)of RRAM were proposed:(1)hybrid read reference generator(HRRG)that tracks process-voltage-temperature(PVT)variations and solve the nonlinear issue of the RRAM cells;(2)a two-stage offset-cancelled current sense amplifier(TSOCC-SA)with only two capacitors achieves a double sensing margin and a high tolerance of device mismatch.The simulation results in 28 nm CMOS technology show that the HRRG can provide a read reference that tracks PVT variations and solves the nonlinear issue of the RRAM cells.The proposed TSOCC-SA can tolerate over 64% device mismatch.
基金Project supported by the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,the National High Technology Research and Development Program of China(Grant No.2014AA032901)the National Natural Science Foundation of China(Grant Nos.61574166,61334007,61306117,61322408,61221004,and 61274091)+1 种基金Beijing Training Project for the Leading Talents in S&T,China(Grant No.Z151100000315008)the CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201504)
文摘Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.
基金supported by the National Basic Research Program of China(Grant No.2011CBA00606)the National Natural Science Foundation of China(Grant Nos.61106106,11304237,61376099,and 11235008)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant Nos.20130203130002 and 20110203110012)
文摘In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.
