Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while ...Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carded out to understand these significant differences in switching time. A redox reaction model in the W：AlOx/WOy device structure is proposed to explain this switching time difference.展开更多
This review summarizes the mechanism and performance of metal oxide based resistive switching memory. The origin of resistive switching （RS） behavior can be roughly classified into the conducting filament type and t...This review summarizes the mechanism and performance of metal oxide based resistive switching memory. The origin of resistive switching （RS） behavior can be roughly classified into the conducting filament type and the interface type. Here, we adopt the filament type to study the metal oxide based resistive switch- ing memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect （ECM） and valence change memory effect （VCM）. At the light of the influence of the electrode materials and switching layers on the RS char- acteristics, an overview has also been given on the performance parameters including the uniformity, endurance, the retention, and the multi-layer storage. Especially, we mentioned ITO （indium tin oxide） electrode and discussed the novel RS characteristics related with ITO. Finally, the challenges resistive random access memory （RRAM） device is facing, as well as the future development trend, are expressed.展开更多
The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,s...The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.展开更多
文摘Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carded out to understand these significant differences in switching time. A redox reaction model in the W：AlOx/WOy device structure is proposed to explain this switching time difference.
基金financial support from the National Natural Science Foundation of China(Nos.61474039 and 51572002)the Nature Science Foundation(Key Project) of Hubei Province (No.2015CFA052)
文摘This review summarizes the mechanism and performance of metal oxide based resistive switching memory. The origin of resistive switching （RS） behavior can be roughly classified into the conducting filament type and the interface type. Here, we adopt the filament type to study the metal oxide based resistive switch- ing memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect （ECM） and valence change memory effect （VCM）. At the light of the influence of the electrode materials and switching layers on the RS char- acteristics, an overview has also been given on the performance parameters including the uniformity, endurance, the retention, and the multi-layer storage. Especially, we mentioned ITO （indium tin oxide） electrode and discussed the novel RS characteristics related with ITO. Finally, the challenges resistive random access memory （RRAM） device is facing, as well as the future development trend, are expressed.
基金supported in part by the National Natural Science Foundation of China(Nos.61421005,61376084)the National Science and Technology Major Project of China(No.2011ZX02708)
文摘The resistive random access memory（RRAM） device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this paper, resistive switching materials,switching mechanism, and memory characteristics of RRAM are discussed. Recent research progress of RRAM in high-density storage and nonvolatile logic application are addressed. Technological trends are also discussed.
