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硅外延层的快速调温化学气相沉积
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作者 荧辉 《国外稀有金属动态》 1992年第15期1-2,共2页
关键词 外延层 rtpcvd
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Prospects of a β-SiC based IMPATT oscillator for application in THz communication and growth of aβ-SiC p-n junction on a Ge modified Si〈100〉substrate to realize THz IMPATTs
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作者 Moumita Mukherjee Nilratan Mazumder 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第12期20-27,共8页
The prospects ofa p+nn+ cubic silicon carbide (3C-SiC/fl-SiC) based IMPATT diode as a potential solidstate terahertz source is studied for the first time through a modified generalized simulation scheme. The simul... The prospects ofa p+nn+ cubic silicon carbide (3C-SiC/fl-SiC) based IMPATT diode as a potential solidstate terahertz source is studied for the first time through a modified generalized simulation scheme. The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for a high-power THz IMPATT device. Based on the simulation results, an attempt has been made to fabricate β-SiC based IMPATT devices in the THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon (Si) (100) substrates by rapid thermal chemical vapour deposition (RTPCVD) at a temperature as low as 800 ℃ using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p-n junction with an n-type doping concentration of 4 × 10^24 m-3 (which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness. 展开更多
关键词 cubic (β)-SiC single drift IMPATT diode parasitic resistance terahertz oscillation rtpcvd growth p-n junction formation
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