RADIATION DEGRADATION OF CHITOSAN IN THE PRESENCE OF H_2O_2

In order to obtain the chitosan oligomers, chitosan was irradiated in the solid state with and without H 2 O 2 as a radiation degradation sensitizer, respectively. At room temperature, the viscosity average-molecular weight (M η ) of chitosan was decreased from 1.6 × 106 to 2.2 × 105 at an absorbed dose of 72 kGy without H2O2, and decreased to 2.7 × 104 at 2 kGy in the presence of an appropriate H2O2 content. In addition, the radiation degradation rate of chitosan containing 38.2wt% H2O2 is 59 times higher than that in the solid state without H2O2. FT-IR analysis suggests that there is no obvious change in the chemical structure of irradiated chitosan with and without H2O2 at a dose below 20 kGy, compared with unirradiated chitosan. On the other hand, the degree of deacetylation (DD) of irradiated chitosan in the studied dose range changed slightly, while DD of irradiated chitosan with H2O2 increased significantly. The XRD pattern indicates that the irradiated chitosan with H2O2 has more perfect crystalline structure than unirradiated chitosan. Therefore, it could be expected that irradiation of chitosan using H2O2 as a sensitizer would be a very effective method to prepare low molecular weight chitosan, because of its feasibility and benignancy to environment.

Radiation-induced 1/f noise degradation of bipolar linear voltage regulator

Radiation-induced 1/f noise degradation in the LM117 bipolar linear voltage regulator is studied. Based on the radiation-induced degradation mechanism of the output voltage, it is suggested that the band-gap reference subcircuit is the critical component which leads to the 1/f noise degradation of the LM117. The radiation makes the base surface current of the bipolar junction transistors of the band-gap reference subcircuit increase, which leads to an increase in the output 1/f noise of the LM117. Compared to the output voltage, the 1/f noise parameter is more sensitive, it may be used to evaluate the radiation resistance capability of LM117.

Epoxy-POSS/silicone rubber nanocomposites with excellent thermal stability and radiation resistance

Due to the rigid Si-O-Si backbone,silicone rubber(SR)have a widespread application in extreme environment such as high temperature and high-level radiation.However,the radiation stability of SR still does not meet the practical needs in special radiation environments.Herein we prepared epoxy POSS(e POSS)/SR nanocomposites with excellent thermal stability and radiation resistance.As a physical crosslinking point in the SR,addition of small amount of ePOSS not only enhanced the mechanical properties of the matrix,but also improved its thermal stability greatly due to their good compatibility.e POSS/SR had higher radiation stability in air than SR owing to the inhibition of radiation oxidation by ePOSS,and the yield of main gaseous radiolysis products(CH_(4),H_(2),CO and CO_(2))of SR and ePOSS/SR nanocomposites was determined.By analyzing the changes of chemical structure,thermal properties and mechanical properties of the ePOSS/SR nanocomposite,combined with the characteristics of gas products afterγ-irradiation,the radiation induced crosslinking and degradation mechanism of the nanocomposites was proposed comprehensively.