The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and the...The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.展开更多
The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly...The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly investigated in studies of SEE. The use of a thin detector is an economical way of directly measuring the LET in space. An LET telescope consists of a thin detector as the front detector(D1), along with a back detector that indicates whether D1 was penetrated. The particle radiation effect monitor(PREM) introduced in this paper is designed to categorize the LET into four bins of 0.2–0.4, 0.4–1.0, 1.0–2.0 and 2.0–20 Me V·cm^2/mg, and one integral bin of LET>20 Me V·cm^2/mg. After calibration with heavy ions and Geant4 analysis, the LET boundaries of the first four bins are determined to be 0.236, 0.479, 1.196, 2.254, and 17.551 Me V·cm^2/mg, whereas that of the integral bin is determined to be LET>14.790 Me V·cm^2/mg. The acceptances are calculated by Geant4 analysis as 0.452, 0.451, 0.476, 0.446, and 1.334, respectively. The LET accuracy is shown to depend on the thickness of D1; as D1 is made thinner, the accuracy of the measured values increases.展开更多
文摘The impact of ionizing radiation effect on single event upset（SEU） sensitivity of ferroelectric random access memory（FRAM） is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement.
基金supported by the National Natural Science Foundation of China(Grant No.41374181)the National Key Scientific Instrument and Equipment Development ProjectsChina(Grant No.2012YQ03014207)
文摘The single event effect(SEE) is an important consideration in electronic devices used in space environments because it can lead to spacecraft anomalies and failures. The linear energy transfer(LET) of ions is commonly investigated in studies of SEE. The use of a thin detector is an economical way of directly measuring the LET in space. An LET telescope consists of a thin detector as the front detector(D1), along with a back detector that indicates whether D1 was penetrated. The particle radiation effect monitor(PREM) introduced in this paper is designed to categorize the LET into four bins of 0.2–0.4, 0.4–1.0, 1.0–2.0 and 2.0–20 Me V·cm^2/mg, and one integral bin of LET>20 Me V·cm^2/mg. After calibration with heavy ions and Geant4 analysis, the LET boundaries of the first four bins are determined to be 0.236, 0.479, 1.196, 2.254, and 17.551 Me V·cm^2/mg, whereas that of the integral bin is determined to be LET>14.790 Me V·cm^2/mg. The acceptances are calculated by Geant4 analysis as 0.452, 0.451, 0.476, 0.446, and 1.334, respectively. The LET accuracy is shown to depend on the thickness of D1; as D1 is made thinner, the accuracy of the measured values increases.
