Raman Spectroscopic Study of Silicon Nanopowders

Vibrational properties of silicon nanopowders are discussed with reference to Raman spectroscopic measurements. The powders were produced in a low pressure rf plasma from the cluster induced agglomeration of positive ions formed during the dissociation of silane. Influence of thermal treatment and the crystallization phenomena of the powder were studied. Raman spectroscopic measurements reveal size quantization effects for the particles as well as the existence of partially ordered regions in the apparently amorphous primary particles. The crystalline and amorphous volume fraction in the material were calculated from the relative spectraI intensities. The results obtained in these experiments are consistent with the observations from recent high resolution transmission electron microscopy studies of these powders

Raman and Infrared Spectroscopic Investigation of Some Hydrous LnTPPTS Complexes(Ln=La,Sm)

The Raman and IR spectra of LnTPPTS·10H 2O[Ln=La,Sm,TPPTS=P(m C 6H 4SO 3)3-3]complexes are reported.Based on the observed Raman and IR characteristic frequencies,a vibrational assignments has been made for these complexes.Coordination induces a lengthening of the S—O bonds and a shortening of the C—S bond.The C—S stretching frequencies should therefore increase while the position of the v(SO 3)should move to a lower wavenumber.Vibrational modes of metal oxygen polyhedronν(Ln—Ο)at 146,168,253 cm-1 are the structural charactrization for coordinate bond of LnTPPTS complexes.

IN-SITU TIME-RESOLVED RAMAN SPECTROSCOPIC STUDIES OF SILVER ELECTRODE IN NaSCN SOLUTION

In-situ time-resolved Raman spectroscopy(TRRS)has been applied on studies of electrochemical adsorption of thiocyanate at silver electrode during potential cycles and potential step.It is shown that some dynamic information about the adsorption and desorption processes can be obtained.

CALORIMETRIC AND RAMAN SPECTROSCOPIC STUDIES ON THE INTERACTION OF LANTHANOID IONS WITH DIPALMITOYLPHOSPHATIDYLCHOLINE BILAYER

The interactions of lanthanoid ions with dipalmitoylphosphatidylcholine bilayer were studied by DSC and Raman spectroscopy.The results show that the addition of lanthanoid ions causes a considerable increase of the gel to liquid crystalline transition temperature of phospholipid and a reduction of order of lateral packing and conformation of acyl chains in SUVs.

CARBON NITRIDE FILMS PREPARED AT DIFFERENT N_2/Ar RATIOS BY CLOSED FIELD UNBALANCED REACTIVE MAGNETRON SPUTTERING

Carbon nitride (CNx) thin films have been deposited onto Si(100) (for structural and mechanical analyses) and M42 high-speed-steel (for tribological measurement s) substrates at room temperature by closed-field unbalanced magnetron sputterin g. The mechanical and tribological properties of these films were highly depende nt on the N/C concentration ratio that was adjusted by the F(N2)/F(Ar) flow-rate ratio at fixed substrate biasing of -60V during deposition. The films were char acterized by employing scanning electron microscopy (SEM), atomic force microsco py (AFM), nano-indentation measurements, X-ray photoelectron spectroscopy (XPS), Raman scattering and Fourier transform infrared (FTIR) spectroscopy, pin-on-dis c tribometer, scratch tester, and Rockwell-C tester. The results showed that the N content in the films increased with the N2 pressure. However, the maximum N/C ratio obtained was 0.25. The nanohardness was measured to be in the range of 11 .7-20.8GPa depending on the N/C ratios. The XPS N 1s spectra showed the existenc e of both N-C sp2 and N-C sp3 bonds in films. Raman and FTIR spectra exhibited t hat N-C bonds were fewer when compared to other N-C bonds. The friction coeffici ent of the film deposited onto steel substrate with N/C=0.26 was measured to be ~0.08 and for film with N/C=0.22 a high critical load of 70N was obtained. The t ribological data also showed that the wear rates of these films were in the rang e of ~10-16m3/Nm, indicating excellent wear resistance for CNx films.

Mixed-dimensional van der Waals heterojunction-enhanced Raman scattering

Van der Waals heterojunctions(vdWHs)provide an excellent material system for the research of heterojunction-enhanced Raman scattering(HERS)due to their complexity and diversity.However,the traditional two-dimensional vdWHs are not conducive to the full utilization of near-field light due to the limitation of single dimension.Herein,we fabricate T-shaped mixed-dimensional SnSe_(2)/ReS_(2) vdWHs via chemical vapor deposition and wetting transfer method,and demonstrate that the mixed-dimensional vdWHs can be used as ultrasensitive HERS chips based on the effective photo-induced charge transfer.Besides,the radiative energy transfer effect enhanced by near-field light further magnifies the HERS signals,improving the detection limit of rhodamine 6G(R6G)to femtomolar level.Furthermore,we demonstrate that the ultrasensitive screening of crystal violet in multicomponent solutions adsorbed on SnSe_(2)/ReS_(2) vdWHs can be achieved by adjusting the laser wavelength,which has not been achieved by noble metal materials.This work provides new insights into the mixed-dimensional vdWHs and demonstrates the great application potential of T-shaped heterojunctions.

Evolution of the Raman spectrum of graphene grown on copper upon oxidation of the substrate

Significant changes in the Raman spectrum of single-layer graphene grown on a copper film were observed after the spontaneous oxidation of the underlying substrate that occurred under ambient conditions. The frequencies of the graphene G and 2D Raman modes were found to undergo red shifts, while the intensities of the two bands change by more than an order of magnitude. To understand the origin of these effects, we further characterized the samples by scanning tunneling microscopy （STM）, scanning tunneling spectroscopy （STS）, and atomic force microscopy （AFM）. The oxidation of the substrate produced an appreciable corrugation in the substrate without disrupting the crystalline order of the graphene overlayer and/or changing the carrier doping level. We explain the red shifts of the Raman frequencies in terms of tensile strain induced by corrugation of the graphene layer. The changes in Raman intensity with oxidation arise from the influence of the thin cuprous oxide film on the efficiency of light coupling with the graphene layer in the Raman scattering process.

Raman spectroscopic detection using a two-dimensional echelle spectrometer

In order to meet the high-resolution and wide spectrum range of the backscattering Raman system, this paper designs and builds a Raman test system based on the echelle spectrometer. In the optical splitting system, compared with the ordinary planar grating spectrometer, the use of the echelle improves the resolution of the system without increasing the volume of the system. The use of intensified charge-coupled device(ICCD) in the detection system improves the signal-to-noise ratio(SNR) and the detection limit of weak spectrum. Finally, the Raman system was spectrally calibrated. The broadband backscattering Raman experimental results are given and discussed. The experimental results show that the system has an excellent application prospect for broadband and high-resolution Raman spectrum measurement.

Tunable filter Raman spectroscopy of purified semiconducting and metallic carbon nanotubes

Tunable filter Raman spectroscopy is used to efficiently produce Raman excitation maps of unpurified and type-purified single walled carbon nanotubes (SWCNTs). Maps with fine excitation resolution (1 nm) are created over a wide wavelength range (727 to 980 nm), extending from metallic to semiconducting resonances. At a given wavelength, the wide bandwidth (>3,000 cm–1) allows the comparison of the G band with the radial breathing mode (RBM), and shows the 2D band and other less prominent bands. Materials examined included unsorted powders, aqueous sorted semiconductors, aqueous sorted metals, and polyfluorene sorted semiconductors in toluene. The Raman excitation profiles of the G band are broad, relative to the RBM bands. The maps offer evidence of minority species contamination, except in the case of the polyfluorene sorted semiconductors. Tunable Raman spectroscopy data help validate the simpler fixed wavelength Raman spectroscopy approaches to purity assessment. [Figure not available: see fulltext.] © 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.