Stimulated raman scattering （SRS） is an effective method for expanding the spectral range of high power lasers, especially in the regime of near IR and middle IR. We report the SRS of high pressure H2 with a multipl...Stimulated raman scattering （SRS） is an effective method for expanding the spectral range of high power lasers, especially in the regime of near IR and middle IR. We report the SRS of high pressure H2 with a multiple-pass cell configuration. The SRS with the multiple-pass cell configuration is found to be very efficient for reduction of threshold of the first Stokes （S1）. Due to the coherent SRS （CSRS） process, the multiple-pass cell configuration is more effective for reduction of the threshold for the second Stokes （S2） SRS and for increasing the conversion efficiency of S2. This contributes to the relatively low conversion efficiency of S1 for the multiple-pass cell configuration. Multiple-pass cell SRS is also found to be very effective for improving the beam quality and the stability of S1.展开更多
Raman spectra of oxygenated and deoxygenated functional erythrocytes are calculated by using Lie algebraic technique. The results are obtained by this method is accuracy with the experimental data. So, the algebraic t...Raman spectra of oxygenated and deoxygenated functional erythrocytes are calculated by using Lie algebraic technique. The results are obtained by this method is accuracy with the experimental data. So, the algebraic techniques are appropriate to the Raman spectra of red blood cells.展开更多
Hydrogenated doped silicon thin films deposited using RF (13.56 MHz) PECVD were studied in detail using micro Raman spectroscopy to investigate the impact of doping gas flow, film thickness, and substrate type on the ...Hydrogenated doped silicon thin films deposited using RF (13.56 MHz) PECVD were studied in detail using micro Raman spectroscopy to investigate the impact of doping gas flow, film thickness, and substrate type on the film characteristics. In particular, by deconvoluting the micro Raman spectra into amorphous and crystalline components, qualitative and quantitative information such as bond angle disorder, bond length, film stress, and film crystallinity can be determined. By selecting the optimum doped silicon thin film deposition conditions, and combining our p-doped and n-doped silicon thin films in different heterojunction structures, we demonstrate both (i) an efficient field effect passivation and (ii) further improvement to c-Si/a-Si:H(i) interface defect density with observed improvement in implied open-circuit voltage VOC and minority carrier lifetimes across all injections levels of interest. In particular, the heterojunction structure (a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(p)) demonstrates a minority carrier lifetime of 2.4 ms at an injection level of 1015 cm-3, and a high implied open-circuit voltage of 725 mV. Simulation studies reveal a strong dependence of the interface defect density Dit on the heterojunction silicon wafer solar cell performance, affected by the deposition conditions of the overlying doped silicon thin film layers. Using our films, and a fitted Dit of 5 × 1010 cm-2·eV-1, we demonstrate that a solar cell efficiency of ~22.5% can be potentially achievable.展开更多
The high-pressure behavior of solid hydrogen has been investigated by in situ Raman spectroscopy upon compression to 300 GPa at ambient temperature. The hydrogen vibron frequency begins to decrease after it initially ...The high-pressure behavior of solid hydrogen has been investigated by in situ Raman spectroscopy upon compression to 300 GPa at ambient temperature. The hydrogen vibron frequency begins to decrease after it initially increases with pressure up to 38 GPa. This softening behavior suggests the weakening of the intramolecular bond and the increased intermolecular interactions. Above 237 GPa, the vibron frequency softens very rapidly with pressure at a much higher rate than that of phase HI, corresponding to transformation from phase III into phase IV. The phase transition sequence has been confirmed from phase I to phase III and then to phase IV at 208 and 237 GPa, respectively. Previous theoretical calculations lead to the proposal of an energetically favorable monoclinic C2/c structure for phase HI and orthorhombic Pbcn structure for phase IV. Up to 304 GPa, solid hydrogen is not yet an alkali metal since the sample is still transparent.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 11304311 and 11475177
文摘Stimulated raman scattering （SRS） is an effective method for expanding the spectral range of high power lasers, especially in the regime of near IR and middle IR. We report the SRS of high pressure H2 with a multiple-pass cell configuration. The SRS with the multiple-pass cell configuration is found to be very efficient for reduction of threshold of the first Stokes （S1）. Due to the coherent SRS （CSRS） process, the multiple-pass cell configuration is more effective for reduction of the threshold for the second Stokes （S2） SRS and for increasing the conversion efficiency of S2. This contributes to the relatively low conversion efficiency of S1 for the multiple-pass cell configuration. Multiple-pass cell SRS is also found to be very effective for improving the beam quality and the stability of S1.
文摘Raman spectra of oxygenated and deoxygenated functional erythrocytes are calculated by using Lie algebraic technique. The results are obtained by this method is accuracy with the experimental data. So, the algebraic techniques are appropriate to the Raman spectra of red blood cells.
文摘Hydrogenated doped silicon thin films deposited using RF (13.56 MHz) PECVD were studied in detail using micro Raman spectroscopy to investigate the impact of doping gas flow, film thickness, and substrate type on the film characteristics. In particular, by deconvoluting the micro Raman spectra into amorphous and crystalline components, qualitative and quantitative information such as bond angle disorder, bond length, film stress, and film crystallinity can be determined. By selecting the optimum doped silicon thin film deposition conditions, and combining our p-doped and n-doped silicon thin films in different heterojunction structures, we demonstrate both (i) an efficient field effect passivation and (ii) further improvement to c-Si/a-Si:H(i) interface defect density with observed improvement in implied open-circuit voltage VOC and minority carrier lifetimes across all injections levels of interest. In particular, the heterojunction structure (a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:H(p)) demonstrates a minority carrier lifetime of 2.4 ms at an injection level of 1015 cm-3, and a high implied open-circuit voltage of 725 mV. Simulation studies reveal a strong dependence of the interface defect density Dit on the heterojunction silicon wafer solar cell performance, affected by the deposition conditions of the overlying doped silicon thin film layers. Using our films, and a fitted Dit of 5 × 1010 cm-2·eV-1, we demonstrate that a solar cell efficiency of ~22.5% can be potentially achievable.
基金Project supported by the National Basic Research Program of China(Grant No.2011CB808200)the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT1132)+2 种基金the National Natural Science Foundation of China(Grant Nos.51032001,11074090,10979001,51025206,11274137,11474127, and 11504127)the National Found for Fostering Talents of Basic Science,China(Grant No.J1103202)the China Postdoctoral Science Foundation(Grant No.2015M570265)
文摘The high-pressure behavior of solid hydrogen has been investigated by in situ Raman spectroscopy upon compression to 300 GPa at ambient temperature. The hydrogen vibron frequency begins to decrease after it initially increases with pressure up to 38 GPa. This softening behavior suggests the weakening of the intramolecular bond and the increased intermolecular interactions. Above 237 GPa, the vibron frequency softens very rapidly with pressure at a much higher rate than that of phase HI, corresponding to transformation from phase III into phase IV. The phase transition sequence has been confirmed from phase I to phase III and then to phase IV at 208 and 237 GPa, respectively. Previous theoretical calculations lead to the proposal of an energetically favorable monoclinic C2/c structure for phase HI and orthorhombic Pbcn structure for phase IV. Up to 304 GPa, solid hydrogen is not yet an alkali metal since the sample is still transparent.
