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Temporal electronic structure of non-resonant Raman excited virtual state of P-nitroaniline by 514 nm excitation via bond polarisabilities
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作者 王培杰 方炎 吴国祯 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第11期264-269,共6页
We have studied the temporal bond polarisabilities of para-nitroaniline from the Raman intensities by the algorithm proposed by Wu et al. in 1987 (Tian B, Wu G, Liu G 1987 J. Chem. Phys. 87 7300). The bond polarisab... We have studied the temporal bond polarisabilities of para-nitroaniline from the Raman intensities by the algorithm proposed by Wu et al. in 1987 (Tian B, Wu G, Liu G 1987 J. Chem. Phys. 87 7300). The bond polarisabilities provide much information concerning the electronic structure of the non-resonant Raman excited virtual state. At the initial moment by the 514.5 nm excitation, the tendency of the excited electrons (mapped out by the bond polarisabilities) is to spread to the molecular periphery, and the electronic structure of the Raman virtual state is close to the pseudoquinonoidic state. When the final stage of relaxation is approached, the bond polarisabilities of those peripheral bonds relax faster than those closer to the molecular core, the phenyl ring. The molecule is in the benzenoidic form as demonstrated by the bond polarisabilities after relaxation. 展开更多
关键词 raman excited virtual state bond polarisabilities relaxation
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The evaluation of temporal electronic structures of nonresonant Raman excited virtual state of thiourea
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作者 房超 孙立风 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第4期280-285,共6页
An algorithm has been introduced to calculate molecular bond polarizabilities of thiourea, which supply essential electronic information about the nonresonant Raman excited virtual states. The main dynamical behaviour... An algorithm has been introduced to calculate molecular bond polarizabilities of thiourea, which supply essential electronic information about the nonresonant Raman excited virtual states. The main dynamical behaviour of the excited virtual states of thiourea is that the Raman excited electrons tend to flow to the N-H bonds and C-N bonds from the S-C bonds because of the electronic repulsion effect. The difference in Raman excited electron relaxation time of thiourea under 514.5-nm and 325-nm excitations has been observed, which quantitatively shows that the Raman scattering process is dependent on the wavelength of the pumping laser. Finally, the distribution of the electrons at the final stage of relaxation is given out through the comparison between the bond electronic densities of the ground states and the bond polarizabilities after deexcitation. 展开更多
关键词 raman intensity electronic relaxation bond polarizability virtual state THIOUREA
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咔唑分子拉曼激发虚态的相关研究
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作者 薄丽娟 陈艳荣 +1 位作者 王培杰 方炎 《物理学报》 SCIE EI CAS CSCD 北大核心 2011年第12期152-159,共8页
根据键极化率与拉曼峰强之间的关系,得到咔唑分子拉曼激发虚态随时间演化的键极化率.将得到的键极化率的末态与用密度泛函理论得到的基态键电荷密度进行了对比,讨论并分析了拉曼激发虚态键极化率随时间弛豫的特征.研究表明:咔唑分子在... 根据键极化率与拉曼峰强之间的关系,得到咔唑分子拉曼激发虚态随时间演化的键极化率.将得到的键极化率的末态与用密度泛函理论得到的基态键电荷密度进行了对比,讨论并分析了拉曼激发虚态键极化率随时间弛豫的特征.研究表明:咔唑分子在拉曼激发初态时,电子由两个骨架六元环向连通两六元环的连通键上流动,而并非向外围的C—H键上流动.拉曼激发末态键极化率分布趋势与基态键电荷密度分布很相似,说明激发的电子又流回到分子骨架,即弛豫到基态.通过对拉曼激发虚态键极化率弛豫过程特征时间的研究,发现连通两六元环的C—C键以及靠近连通键的C—C键的键极化率的弛豫时间较其他键的极化率弛豫时间都长,进一步说明了拉曼激发虚态电子弛豫特征.这些结果反映了咔唑这类具有连通键的多元环分子在拉曼激发虚态所具有的特征与性质,这对拉曼激发虚态的研究有重要意义. 展开更多
关键词 拉曼峰强 键极化率 拉曼激发虚态
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