Large and nonlinear electric field response in a two-dimensional ferroelectric Rashba material

The achievement of electrical spin control is highly desirable.One promising strategy involves electrically mod-ulating the Rashba spin orbital coupling effect in materials.A semiconductor with high sensitivity in its Rashba constant to external electric fields holds great potential for short channel lengths in spin field-effect transistors,which is crucial for preserving spin coherence and enhancing integration density.Hence,two-dimensional(2D)Rashba semiconductors with large Rashba constants and significant electric field responses are highly desirable.Herein,by employing first-principles calculations,we design a thermodynamically stable 2D Rashba semiconductor,YSbTe_(3),which possesses an indirect band gap of 1.04 eV,a large Rashba constant of 1.54 eV·Åand a strong electric field response of up to 4.80 e·Å^(2).In particular,the Rashba constant dependence on the electric field shows an unusual nonlinear relationship.At the same time,YSbTe_(3)has been identified as a 2D ferroelectric material with a moderate polarization switching energy barrier(~0.33 eV per formula).By changing the electric polarization direction,the Rashba spin texture of YSbTe_(3)can be reversed.These out-standing properties make the ferroelectric Rashba semiconductor YSbTe_(3)quite promising for spintronic applications.

Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.

Continuous modulation of charge-spin conversion by electric field in Pt/CO_(2)Fe Si/Pb(Mg_(1/3)Nb_(2/3))O_(3)-Pb_(0.7)Ti_(0.3)O_(3 )heterostructures

The half-metallic Heusler alloy CO_(2)FeSi is an ideal material in spintronic devices due to its higher spin polarization,higher Curie temperature and lower damping parameters.In this work,the dynamic magnetism of CO_(2)FeSi is modulated by electric field and it is demonstrated that the charge-spin conversion efficiencyξis continuous and controllable by the electric field.We further find an extremely highξin ferromagnetic/ferroelectric(FM/FE)heterostructures,which could be ascribed to interfacial effect in FM/FE interface.Moreover,we investigate that the charge-spin conversion efficiency varies with the electric field in a butterfly-like behavior,which accords with the S–E curve of Pb(Mg_(1/3)Nb_(2/3))O_3-Pb_(0.7)Ti_(0.3)O_(3)(PMN-PT)and could be attributed to strain effect.The modulation of charge-spin conversion efficiency in FM/FE heterostructures via electric field presents a profound potential for next-generation spintronic devices and applications of current-induced magnetization switching.

Properties of polaron in a triangular quantum well induced by the Rashba effect

The properties of the weakly-coupling bound polaron, considering an influence of Rashba effect, which is brought about by the spin-orbit （SO） interaction, in an semiconductor triangular quantum well （TQW）, have been studied by using the linear combination operator and the unitary transformation methods. We obtain an expression for the ground state energy of the weak-coupling and bound polaron in a TQW as a function of the coupling constant, Coulomb bound potential, and the electron areal density. Our numerical resuks show that the ground state energy of the polaron is composed of four parts, one part is caused by the electrons＇ own energy, the second part is caused by the Rashba effect, the third part occurs because of the Coulomb bound potential, and the last term is induced by the interaction between the electrons and LO phonons. The interactions between the orbit and the spin with different directions have different effects on the ground state energy of the polaron.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al0.3Ga0.7As/GaAs/AlxGa1-xAs/Al0.3Ga0.7As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference.The dependence of the spin splitting on the electric field and the well structure,which is controlled by the well width and the step width,is investigated in detail.Without an external electric field,the spin splitting is induced by an interface related Rashba term due to the built-in structure inversion asymmetry.Applying the external electric field to the step QW,the Rashba effect can be enhanced or weakened,depending on the well structure as well as the direction and the magnitude of the electric field.The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field,and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

Rashba Effect in Presence of Time-Dependent Interaction

Rashba effect in presence of a time-dependent interaction has been considered.Then time-evolution of such a system has been studied by using Lewis–Riesenfeld dynamical invariant and unitary transformation method.So appropriate dynamical invariant and unitary transformation according the considered system have been constructed as well as some special cases have come into this article which are common in physics.

Rapid transition of the hole Rashba effect from strong field dependence to saturation in semiconductor nanowires

With the support by the National Natural Science Foundation of China,a study by the research group led by Prof.Luo Junwei(骆军委)from the Institute of Semiconductors,Chinese Academy of Sciences discovered a rapid transition of the hole Rashba effect from strong field dependence to saturation

Intrinsic spin Hall resonance in Bi-based Janus monolayers

The spin Hall resonance effect(SHRE)characterized by a large spin Hall conductivity(SHC)holds immense promise for achieving spin logic and memory devices.However,the identification of a material capable of achieving intrinsic SHRE remains elusive.Herein,we present compelling evidence of intrinsic SHRE within the Bi-based Janus BiXY(X=S,Se and Te;Y=Cl,Br and I)monolayers through first-principles calculations and an effective Hamiltonian model.We attribute the unusual scenario to the warping effect in the Janus monolayers which induces a non-zero out-of-plane spin component,accompanied by additional Rashba degenerate points.Furthermore,we develop a comprehensive effective Rashba Hamiltonian,incorporating high order terms of k to accurately describe the intrinsic SHRE and establish the resilience of this phenomenon in the Janus monolayers.Our study presents a captivating platform for exploring intrinsic SHRE and opens up exciting avenues for the development of novel spintronic devices.

Spin Splitting in Different Semiconductor Quantum Wells

We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field.The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included.The results show that the structure of quantum well plays an important role in spin splitting.The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different.The origin of the distinction is discussed in this work.