Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film qualit...Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality, purity, and accurate composition control. However,the conventional physical vapor deposition process cannot meet the gap- filling requirement with the critical device dimension scaling down to 90 nm or below. In this study, we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process, especially at the nano-scale critical dimension. The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed. We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling. We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process. We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.展开更多
Tight oil in the redeposited carbonates was mainly distributed in the Lower Submember of Member 3 of Shahejie Formation in Shulu sag of Jizhong depression,North China.Through high-resolution 3D seismic data,well loggi...Tight oil in the redeposited carbonates was mainly distributed in the Lower Submember of Member 3 of Shahejie Formation in Shulu sag of Jizhong depression,North China.Through high-resolution 3D seismic data,well logging data and drilling data,the Lower Submember of Member 3 of Shahejie Formation was divided into 5 third-order sequences and 15 parasequence sets.The redeposited marl and rudstone were major reserving horizons of tight oil,and ten reserving space types were developed and could be classified into two main categories,i.e.,pores and fractures.Two types of tight oil reservoirs were established,i.e.,the marl hydrocarbon reservoir of the source-reservoir integration and the rudstone hydrocarbon reservoirs of the source-reservoir paragenesis.The assemblage relationship among the high-quality source rocks,system tracts with the source-reservoir configuration was the major control factor for tight oil accumulation in the redeposited carbonates.The lacustrine transgressive system tracts and highstand systems tracts in SQ1 to SQ5 were the favorable horizons for development of the marl hydrocarbon reservoir,the lowstand system tracts in SQ1 to SQ3 were the favorable horizons for development of the rudstone hydrocarbon reservoir.展开更多
基金Project supported by the National Basic Research Program of China (Grant Nos.2010CB934300,2011CBA00607,and 2011CB932800)the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003)+1 种基金the National Natural Science Foundation of China (Grant Nos. 60906004,60906003,61006087,and 61076121)the Science and Technology Council of Shanghai,China (Grant No. 1052nm07000)
文摘Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality, purity, and accurate composition control. However,the conventional physical vapor deposition process cannot meet the gap- filling requirement with the critical device dimension scaling down to 90 nm or below. In this study, we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process, especially at the nano-scale critical dimension. The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed. We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling. We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process. We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.
基金This work was supported by PetroChina Major Science and Technology Project(No.2017E-015)PetroChina Key Project(No.kt2017-07).
文摘Tight oil in the redeposited carbonates was mainly distributed in the Lower Submember of Member 3 of Shahejie Formation in Shulu sag of Jizhong depression,North China.Through high-resolution 3D seismic data,well logging data and drilling data,the Lower Submember of Member 3 of Shahejie Formation was divided into 5 third-order sequences and 15 parasequence sets.The redeposited marl and rudstone were major reserving horizons of tight oil,and ten reserving space types were developed and could be classified into two main categories,i.e.,pores and fractures.Two types of tight oil reservoirs were established,i.e.,the marl hydrocarbon reservoir of the source-reservoir integration and the rudstone hydrocarbon reservoirs of the source-reservoir paragenesis.The assemblage relationship among the high-quality source rocks,system tracts with the source-reservoir configuration was the major control factor for tight oil accumulation in the redeposited carbonates.The lacustrine transgressive system tracts and highstand systems tracts in SQ1 to SQ5 were the favorable horizons for development of the marl hydrocarbon reservoir,the lowstand system tracts in SQ1 to SQ3 were the favorable horizons for development of the rudstone hydrocarbon reservoir.
