This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18...This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.展开更多
Sn thin film on Cu foil substrate as the anode of lithium ion battery was prepared by direct current magnetron sputtering(DCMS). The surface morphology,composition and thickness and the electrochemical behaviors of th...Sn thin film on Cu foil substrate as the anode of lithium ion battery was prepared by direct current magnetron sputtering(DCMS). The surface morphology,composition and thickness and the electrochemical behaviors of the prepared Sn thin film were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),inductively coupled plasma atomic emission spectrometry(ICP),cyclic voltammetry(CV) and galvanostatic charge/ discharge(GC) measurements. It is found that the Sn film is consists of pure Sn with an average particle diameter of 100 nm. The thickness of the film is about 320 nm. The initial lithium insertion capacity of the Sn film is 771 mA·h/g. The reversible capacity of the film is 570 mA·h/g and kept at 270 mA·h/g after 20 cycles.展开更多
Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing...Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.展开更多
NbCrAl coatings in the presence or absence of Al outer layer were prepared on C103 Nb based alloy and alumina substrate by direct current magnetron sputtering technique. The oxidation performance of coating systems wa...NbCrAl coatings in the presence or absence of Al outer layer were prepared on C103 Nb based alloy and alumina substrate by direct current magnetron sputtering technique. The oxidation performance of coating systems was evaluated by isothermal oxidation tests. The element diffusion and oxidation behavior of the coating systems were investigated. The results indicate that the mass gains of NbCrAl and Al/NbCrAl coatings are 2.02 mg/cm^2 and 0.79 mg/cm^2 at 1 000 ℃ for short time. Al/NbCrAl coatings exhibit more effective protection than NbCrAl coatings. The addition of Al layer can improve the oxidation resistance of NbCrAl coatings, which is attributed to the Al layer offering enough Al content to react with oxygen to form a continuous and dense Al_2O_3 scale on NbCrAl coating and it can inhibit the further internal oxidation.展开更多
Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering paramet...Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O2, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD） measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to- O2 composition of 1：1, a higher intensity of the （002） diffraction peak and a narrower full width at half maximum （FWHM） were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film.展开更多
CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin ...CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750℃ to 850℃.Subsequently yttria-stabilized zirconia （YSZ） and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM （full width half maximum） values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations,respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ（YBCO） coated conductors.展开更多
Some metal compounds called as Non-Evaporable-Getter have been widely used to improve vacuum system performance of accelerator facility.In this paper,a TiZrV film on the surface of stainless steel vacuum pipe is made ...Some metal compounds called as Non-Evaporable-Getter have been widely used to improve vacuum system performance of accelerator facility.In this paper,a TiZrV film on the surface of stainless steel vacuum pipe is made by direct current magnetron sputtering,and its vacuum performance is experimentally studied.Our results show that the TiZrV film is partly activated at 160℃,and its pressure performance is similar with one at higher temperature. The coating reduces the ultimate pressure and prominently shortens the pressure-down time in a sputter ion pump system,thus creating evenly distributed pressure profile in a coating pipe.The adsorption rate is steady,and adsorption amount increases linearly.Such TiZrV-coated pipe behaves like pump other than gas source in vacuum system.展开更多
The behavior of Ti based on Si（lll） in oxygen under high temperatures（700 ℃, 800 ℃ , 900 ℃ , I 000 ℃ and 1 100℃） is reported. X-ray diffraction（XRD） and Fourier transform infrared spectroscopy （FTIR） are ...The behavior of Ti based on Si（lll） in oxygen under high temperatures（700 ℃, 800 ℃ , 900 ℃ , I 000 ℃ and 1 100℃） is reported. X-ray diffraction（XRD） and Fourier transform infrared spectroscopy （FTIR） are used to analyze the structure and composition of the samples annealing at different temperatures in oxygen ambience. It is found that raising temperature is helpful to the formation of both TiSi2 and TiO2 and helpful to the diffusion of Ti to Si substrate.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60807001)the National Basic Research Program of China (Grant No. 2011CB201605)the Foundation of Henan Educational Committee (Grant No. 2010A140017)
文摘This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.
基金Projects(50771046 20373016) supported by the National Natural Science Foundation of China+2 种基金Project(05200534) supported by the Natural Science Foundation of Guangdong Province, ChinaProject(2006A10704003) supported by the Key Project of Guangdong Province, ChinaProject(2006Z3-D2031) supported by the Key Project of Guangzhou City, China
文摘Sn thin film on Cu foil substrate as the anode of lithium ion battery was prepared by direct current magnetron sputtering(DCMS). The surface morphology,composition and thickness and the electrochemical behaviors of the prepared Sn thin film were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),inductively coupled plasma atomic emission spectrometry(ICP),cyclic voltammetry(CV) and galvanostatic charge/ discharge(GC) measurements. It is found that the Sn film is consists of pure Sn with an average particle diameter of 100 nm. The thickness of the film is about 320 nm. The initial lithium insertion capacity of the Sn film is 771 mA·h/g. The reversible capacity of the film is 570 mA·h/g and kept at 270 mA·h/g after 20 cycles.
基金Natural Science Foundation of Tianjin(No.043100811)the Key Program of Natural Science Foundation of Tianjin(No.08JCZDJC17500)
文摘Low valence vanadium oxide(VO2-x) thin films were prepared on SiO2/Si substrates at room temperature by direct current facing targets reactive magnetron sputtering, and then proc- essed through rapid thermal annealing. The effects of the annealing on the structure and phase transition property of VO2 were discussed. X-ray photoelectron spectroscopy, X-ray diffraction tech- nique and Fourier transform infrared spectroscopy were employed to study the phase composition and structure of the thin films. The resistance-temperature property was measured. The results show that VO2 thin film is obtained after annealed at 320 ℃ for 3 h, its phase transition tempera- ture is 56 ℃, and the resistance changes by more than 2 orders. The vanadium oxide thin films are applicable in thermochromic smart windows, and the deposition and annealing process is compatible with micro electromechanical system process.
基金Funded by the National Natural Science Foundation of China(51371059)the Guangxi Natural Science Foundation(2016GXNSFDA380022,AA17204100,AA18118030)+1 种基金the Project of Development of Science and Technology of Nanning(20181191-2)the High-Level Innovative Team and Outstanding School Program in Guangxi Colleges(the Second Batch)
文摘NbCrAl coatings in the presence or absence of Al outer layer were prepared on C103 Nb based alloy and alumina substrate by direct current magnetron sputtering technique. The oxidation performance of coating systems was evaluated by isothermal oxidation tests. The element diffusion and oxidation behavior of the coating systems were investigated. The results indicate that the mass gains of NbCrAl and Al/NbCrAl coatings are 2.02 mg/cm^2 and 0.79 mg/cm^2 at 1 000 ℃ for short time. Al/NbCrAl coatings exhibit more effective protection than NbCrAl coatings. The addition of Al layer can improve the oxidation resistance of NbCrAl coatings, which is attributed to the Al layer offering enough Al content to react with oxygen to form a continuous and dense Al_2O_3 scale on NbCrAl coating and it can inhibit the further internal oxidation.
基金National Natural Science Foundation of China (Nos.60577040,60877017)Program for Changjiang Scholars,Innovative Research Team in University of China (No.IRT0739)+1 种基金Innovation Program of Shanghai Municipal Education Commission of China (08YZ04)Shanghai Leading Academic Disciplines of China (S30107)
文摘Highly c-axis-oriented ZnO films were deposited successfully on the nucleation sides of free-standing diamond （FD） films by the direct current （DC） magnetron sputtering method. The effect of the sputtering parameters, such as power, gas pressure and sputtering plasma composition of Ar-to-O2, on the properties of ZnO thin films was investigated in detail. X-ray diffraction （XRD） measurements showed that, at a sputtering power of 200 W, gas pressure of 0.5 Pa and an Ar-to- O2 composition of 1：1, a higher intensity of the （002） diffraction peak and a narrower full width at half maximum （FWHM） were detected which meant high c-axis orientation and high quality of the ZnO films. To improve the quality of the ZnO film, a thin ZnO layer was pre-grown as a homo-buffer layer. XRD measurements showed that this buffer layer had a beneficial effect on the structural and morphological properties of the post-grown ZnO film.
文摘CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750℃ to 850℃.Subsequently yttria-stabilized zirconia （YSZ） and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM （full width half maximum） values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations,respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ（YBCO） coated conductors.
文摘Some metal compounds called as Non-Evaporable-Getter have been widely used to improve vacuum system performance of accelerator facility.In this paper,a TiZrV film on the surface of stainless steel vacuum pipe is made by direct current magnetron sputtering,and its vacuum performance is experimentally studied.Our results show that the TiZrV film is partly activated at 160℃,and its pressure performance is similar with one at higher temperature. The coating reduces the ultimate pressure and prominently shortens the pressure-down time in a sputter ion pump system,thus creating evenly distributed pressure profile in a coating pipe.The adsorption rate is steady,and adsorption amount increases linearly.Such TiZrV-coated pipe behaves like pump other than gas source in vacuum system.
基金National Natural Science Foundation of China(90201025 ,90301002)
文摘The behavior of Ti based on Si（lll） in oxygen under high temperatures（700 ℃, 800 ℃ , 900 ℃ , I 000 ℃ and 1 100℃） is reported. X-ray diffraction（XRD） and Fourier transform infrared spectroscopy （FTIR） are used to analyze the structure and composition of the samples annealing at different temperatures in oxygen ambience. It is found that raising temperature is helpful to the formation of both TiSi2 and TiO2 and helpful to the diffusion of Ti to Si substrate.
