Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

The design of the active region structures,including the modifications of structures of the quantum barrier(QB)and electron blocking layer(EBL),in the deep ultraviolet(DUV)Al Ga N laser diode(LD)is investigated numerically with the Crosslight software.The analyses focus on electron and hole injection efficiency,electron leakage,hole diffusion,and radiative recombination rate.Compared with the reference QB structure,the step-like QB structure provides high radiative recombination and maximum output power.Subsequently,a comparative study is conducted on the performance characteristics with four different EBLs.For the EBL with different Al mole fraction layers,the higher Al-content Al Ga N EBL layer is located closely to the active region,leading the electron current leakage to lower,the carrier injection efficiency to increase,and the radiative recombination rate to improve.

Decrease of back recombination rate in CdS quantum dots sensitized solar cells using reduced graphene oxide

The photovoltaic performance of CdS quantum dots sensitized solar cells （QDSSCs） using the 0.2 wt% of reduced graphene oxide and TiO2 nanoparticles （RGO＋TiO2 nanocomposite） photoanode is investigated. CdS QDs are adsorbed onto RGO＋TiO2 nanocomposite films by the successive ionic layer adsorption and reaction （SILAR） technique for several cycles. The current density-voltage （J-V） characteristic curves of the assembled QDSSCs are measured at AM1.5 simulated sunlight. The optimal photovoltaic performance for CdS QDSSC was achieved for six SILAR cycles. Solar cells based on the RGO＋TiO2 nanocomposite photoanode achieve a 33% increase in conversion efficiency （η） compared with those based on plain TiO2 nanoparticle （NP） photoanodes. The electron back recombination rates decrease significantly for CdS QDSSCs based on RGO＋TiO2 nanocomposite photoanodes. The lifetime constant （τ） for CdS QDSSC based on the RGO＋TiO2 nanocomposite photoanode is at least one order of magnitude larger than that based on the bare TiO2NPs photoanode.

Inhibiting radiative recombination rate to enhance quantum yields in a quantum photocell

Inhibiting the radiative radiation is an efficient approach to enhance quantum yields in a solar sell.This work carries out the inhibition of radiative recombination rate(RRR)in a quantum photocell with two coupled donors.We perform explicit calculations of the transition rates,energy gaps and the absorbed solar wavelength-dependent RRR,and find that two different regimes play the crucial roles in inhibiting RRR.One is the quantum coherence generated from two different transition channels,the other includes the absorbed photon wavelength and gaps between the donor and acceptor in this proposed photocell model.The results imply that there may be some efficient ways to enhance the photoelectron conversion compared to the classic solar cell.

Calculation of Photo-Ionisation Cross Sections and Radiative Recombination Rate Coefficients for CO and CO^+ Molecules

A method based upon the weighted total cross section （WTCS） theory is proposed to calculate the photo-ionisation cross sections and the radiative recombination rate coefficients between the fundamental level of CO and the main electronic states of its corresponding ion. Total photo-ionisation cross sections and radiative recombination rate coefficients are determined from the calculation of elementary vibrational photo-ionisation cross sections. Transitions be- tween CO＋（X, A and B） and CO（X） are considered. Total photo-ionisation cross sections and recombination coefficients are computed in the temperature interval 500-15000 K.

Influences of Injection Barrier and Mobility on Recombination Rate and Zone in OLEDs

The luminous efficiency of organic light-emitting devices depends on the recombination probability of electrons injected at the cathode and holes at the anode. A theoretical model to calculate the distribution of current densities and the recombination rate in organic single layer devices is presented taking into account the charge injection process at each electrode, charge transport and recombination in organic layer. The calculated results indicate that efficient single-layer devices are possible by adjusting the barrier heights at two electrodes and the carrier mobilities. Lowering the barrier heights can improve the electroluminescent(EL) efficiency pronouncedly in many cases, and efficient devices are still possible using an ohmic contact to inject the low mobility carrier, and a contact limited contact to inject the high mobility carrier. All in all, high EL efficiency needs to consider sufficient recombination, enough injected carriers and well transport.

Resonance Excitation Rate Coefficient of Ni-Like Tantalum

The ab initio calculations of electron-impact resonant excitation rate coefficients from the ground level to 54 fine-structure levels of 3d94l （1 = s, p, d, f） configurations of Ni-like tantalum ion are performed by using a fully relativistic distorted-wave approximation. The configuration-interaction effects are taken into account. The decays to autoionizing levels possibly followed by autoionization cascades are also included in the calculation. The contributions from doubly-excited intermediate states of Cu-like 31^17n′l′n′l″ （n′ = 4, 5; n″ = 5 - 15） are calculated explicitly, and the contributions from high Rydberg states （n″〉 15） are taken into account by using n-3 scaling law. The present results should be more accurate than the existent calculations.

Design and Performance of an AlGaN-Based p-i-n Ultraviolet Photodetector

An AIGaN-based back-illuminated ultraviolet p-i-n detector is designed and its performance is analysed both simulately and experimentally. The width of p- and i-regions has been optimized to the best theoretic values. It is indicated that the changing of responsivity with increase of bias can not be attributed to the expansion of depletion layer as it is believed, but to two reasons： 1） the effect of GaN/AlGaN heterojunction barrier to block the electrons decreases with higher bias and 2） the recombination rate of excess carriers decreases due to the building up of an electric field in depletion region. At zero bias, the simulated responsivity reaches its maximum of 0.12 A/W with quantum efficiency of 55.1%. The measured peak responsivity is more than 0.09 A/W with quantum efficiency greater than 41.6%. The experimental data are almost consistent with the results of the simulation.

Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell

Boron-doped hydrogenated silicon films with different gaseous doping ratios（B2H6/SiH4） were deposited in a plasma-enhanced chemical vapor deposition（PECVD） system.The microstructure of the films was investigated by atomic force microscopy（AFM） and Raman scattering spectroscopy.The electrical properties of the films were characterized by their room temperature electrical conductivity（σ） and the activation energy（Ea）.The results show that with an increasing gaseous doping ratio,the silicon films transfer from a microcrystalline to an amorphous phase,and corresponding changes in the electrical properties were observed.The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions.The measurements of the I-V characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04,and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it.The junction with such a recombination layer has a small resistance,a nearly ohmic contact,and a negligible optical absorption.

Improved luminescence and photocatalytic properties of Sm^(3+)-doped ZnO nanoparticles via modified sol-gel route:A unified experimental and DFT+U approach

In the current study,a modified sol-gel route was used to produce undoped and Sm^(3+)doped(1 mol%,3 mol%and 5 mol%)ZnO nanoparticles(NPs).The study of opto-structural properties of Sm^(3+)doped NPs was carried out both experimentally and theoretically.Complete dissolution of Sm^(3+)ions into the ZnO lattice is obviously seen from X-ray diffraction(XRD)analysis.Morphological evolution with doping was studied using field emission scanning electron microscopy(FESEM)and transmission electron microscopy(TEM).X-ray photoelectron spectroscopy(XPS)was carried out to confirm the prese nce of Sm~(3+)on the doped NPs.Increasing dopant quantity results in a redshift of the NPs along with a reduction in bandgap with increasing abso rption in the visible range,and a minimum of 3.18 eV of optical bandgap for Zn_(0.97)Sm_(0.03)O is found.Photoluminescence spectroscopy reveals a drop in the recombination rate of electron-hole with increasing doping content till 3 mol%,followed by an increase of Zn_(0.95)Sm_(0.05)O.Photogenerated electron-hole pair recombination is revealed by the orange band in the luminescence spectra.Theoretical analysis was also carried out with density functional theory(DFT).This work also unfolds the fundamental understanding of the structural properties of the synthesized NPs to enhance photocatalytic activity successfully.Later,photocatalytic activity for the optimum composition,i.e.,3 mol%,was assessed experimentally.

Theoretical investigation of some parameters into the behavior of quantum dot solar cells

The main goal of this paper is to determine the accurate values of two parameters namely the surface generation–recombination rate and the average total number of electrons density generated in the i-region. These values will enhance the performance of quantum dot solar cells（QDSCs）. In order to determine these values, this paper concentrates on the optical generation lifetime, the recombination lifetime, and the effective density state in QDs. Furthermore, these parameters are studied in relation with the average total number of electrons density. The values of the surface generation–recombination rate are found to be negative, which implies that the generation process is dominant in the absorption quantum dot region. Consequently, induced photocurrent density relation with device parameters is determined. The results ensure that QDSCs can have higher response photocurrent and then improve the power conversion efficiency. Moreover, the peak value of the average total number of electrons density is achieved at the UV range and is extended to the visible range, which is adequate for space and ground solar applications.