The manipulation of rectifying contact of Co and nitrogen-doped carbon hierarchical superstructures toward high-performance oxygen reduction reaction

Rational design and construction of oxygen reduction reaction(ORR)electrocatalysts with high activity,good stability,and low price are essential for the practical applications of renewable energy conversion devices,such as metal-air batteries.Electronic modification through constructing metal/semiconductor Schottky heterointerface represents a powerful strategy to enhance the electrochemical performance.Herein,we demonstrate a concept of Schottky electrocatalyst composed of uniform Co nanoparticles in situ anchored on the carbon nanotubes aligned on the carbon nanosheets(denoted as Co@N-CNTs/NSs hereafter)toward ORR.Both experimental findings and theoretical simulation testify that the rectifying contact could impel the voluntary electron flow from Co to N-CNTs/NSs and create an internal electric field,thereby boosting the electron transfer rate and improving the intrinsic activity.As a consequence,the Co@N-CNTs/NSs deliver outstanding ORR activity,impressive long-term durability,excellent methanol tolerance,and good performance as the air-cathode in the Zn-air batteries.The design concept of Schottky contact may provide the innovational inspirations for the synthesis of advanced catalysts in sustainable energy conversion fields.

The Effect of Benzyltetrahydropalmatine (BTHP) on Action Potentials and the Two Components of Delayed Rectifying Potassium Currents in Guinea Pig Ventricular Myocytes

The effects of BTHP on Ca 2+ independent action potential and the two components of delayed rectifier potassium currents were studied in guinea pig single ventricular myocytes by using whole cell patch clamp technique. BTHP 30 μmol·L -1 significantly prolonged APD 90 from 143±16 ms to 184±21 ms ( P 【0.01, n=5) without affecting either the RP or APA, and the APD prolonging effects of BTHP were independent of extracellular Ca 2+ . BTHP inhibited both I kr (IC 50 =7 9 μmol·L -1 ) and I ks (IC 50 =22 4 μmol·L -1 ) in a concentration dependent fashion. The results demon strated that BTHP had no obvious selectivity for I kr and I ks .

Anchoring eccentricity features and rectifying devices for resin grouted bolt/cable bolt

The anchoring eccentricity of the bolt and cable bolt is a common problem in geotechnical support engineering and affects the ability of the bolt and cable bolt to control the rock mass to a certain extent.This paper reports on numerical simulation and laboratory experiments conducted to clarify the effect of eccentricity on the anchoring quality of the bolt and cable bolt,and to establish an effective solution strategy.The results reveal that the anchoring eccentricity causes unbalanced stress distribution and the uncoordinated deformation of the resin layer,which results in higher stress and greater deformation of the resin layer at the near side of the rod body.Additionally,as the degree of anchoring eccentricity increases,the effect becomes more significant,and the resin layer of the anchoring system becomes more likely to undergo preferential failure locally,which weakens the load-bearing performance of the anchoring system.This paper develops an innovative bolt anchoring rectifying device(B-ARD)and cable bolt anchoring rectifying device(C-ARD)on the basis of the structural characteristics of the bolt and cable bolt to better ensure the anchoring effect of them.The working effects of these two devices were verified in detailed experiments and analysis.The experimental results show that the anchoring rectifying devices(ARD)improve and ensure the anchoring concentricity of the bolt and cable bolt,which will help improve the supporting performance of them.The paper provides a convenient and effective method for improving the anchoring concentricity of the bolt and cable bolt,and provides a concept and reference for technical research on improving the effect of roof bolting.

Deviation-Rectifying Control of Carbon Fiber Prepreg Slitting and Winding Machine

With the growing needs of prepreg tapes for the automated fiber placement(AFP),the deviation-rectifying of prepreg in slitting process was investigated on a self-developed 16-tow prepreg slitting and winding machine.The process of slitting and rewinding of prepreg tape was introduced,and the reason of prepreg tape deviation in slitting process was analyzed.In order to ensure the quality of the narrow prepreg slits,the application of the fuzzy PID algorithm in a closed-loop control system was discussed.A fuzzy PID algorithm was designed by combining fuzzy rules and PID controller.By applying it to precise deviation-rectifying control strategy,the automatic control of rectification could be achieved with accuracy of 0.1 mm,which satisfies the requirement of the prepreg tape both in slitting quality and layup quality for AFP.

RECTIFYING EFFECT OF POLYANILINE(PANI)/N-TYPE POROUS SILICONE HETEROJUNCTION

Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.

Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy

Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This “rectifying” effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit （VEPF） analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.

Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain

An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline （PANI） derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. of the film, the side with being irradiated by UV light during preparation is represented as ＇A side＇; the other side without being irradiated is represented as ＇N side＇. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the current voltage characteristic curves with the values of rectifying ratio （30 being 20 at ±0.06 V at T = 77 K and 4 at ±0.02 V at T = 300 K separately.

Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets

This paper reports that the Schottky junctions between low work function metals （e.g. Al and In） and doped semiconducting polymer pellets （e.g. polyaniline （PANI） microsphere pellet and polypyrrole （PPy） nanotube pellet） have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I - V characteristic curves （rectifying ratio γ = 5 at ±6 V bias at room temperature）. As compared to the Al/PANI/Ag, the heterojunction between In and PANI （In/PANI/Ag） exhibits a lower rectifying ratio γ= 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag （γ = 3.2 at ±1.6 V bias） and In/PPy/Ag （γ = 1.2 at ±3.0 V bias）. The results were discussed in terms of thermoionic emission theory.

Rational Thinking on Rectifying and Improving the Group Position of Peasant Laborer

The group of peasant laborer, being a beneficial group in present Chinese society, has already come into being, which is both outcome of duality and the important strength breaking duality in Chinese society. However, for a long time the severe maladjustments of peasant laborer group＇s not only engender the injustice of their position but also do harm to the development of social structure and economic growth in China. Therefore, describing the position of peasant laborer group and analyzing the consequence which causes by their imbalance position may have significant impact on perfecting Chinese social structure and attaining the objectives of combining the city with countryside in theory and practice.

Rectifying and photovoltaic properties of ZnCo_2O_4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm^2 and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures＇ photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.

Temperature-dependent rectifying and photovoltaic characteristics of an oxygen-deficient Bi_2Sr_2Co_2O_y/Si heterojunction

A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.

STM Study on the Rectifying Performance of Molibdo-Vanadophosphate Polyanions

Scanning tunneling spectroscopy (STS) was used for investigation of rectification properties of molecules with spatial asymmetry. The molecules of cetyltrimethylammonium derivatives of 10-molibdo-2-vanadophosphate-anions [PMo10V2O40]﹣5 (CTMVA) were adsorbed on a surface of pyrolytic graphite (HOPG). Consequently, both good diode properties and J(V)-curves reproducibility of the film were revealed. The validity of the single-level model for the evaluation of the system parameters is discussed.

A Theoretical Investigation on Rectifying Performance of a Single Motor Molecular Device

We report ab initio calculations of the transport behavior of a phenyl substituted molecular motor. The calculated results show that the transport behavior of the device is sensitive to the rotation degree of the rotor part. When the rotor part is parallel with the stator part, a better rectifying performance can be found in the current-voltage curve. However, when the rotor part revolves to vertical with the stator part, the currents in the positive bias region decrease slightly. More importantly, the rectifying performance disappears. Thus this offers us a new method to modulate the rectifying behavior in molecular devices.

The State Council Notified to Rectify and Reorganize Non-Experimental Commercial Enterprises with Foreign Investment

The State Council Office has recently issued"Notification of relevant issues on rectifying andreorganizing non-experimental commercial enter-prises with foreign investment", making it clearthat non-experimental commercial enterprises withforeign investment would be rectified.The notification emphasizes that all the non-experimental commerical enterprises with foreigninvestment which have been presumptuously ap-proved for establishment by localities or depart-ments prior to the issuance by the State CouncilOffice of the Urgent notification of prompt stop oflocal presumptuous approval of establishment ofcommercial enterprises with foreign

Imbalance Between Scientific Technology and Human Rights and Measures to Rectify the Imbalance——Taking Geological Disasters as an Example

I. Increase in Human Activity and Occurrence of Geological Disasters ＂A geological disaster is a natural disaster that happens in a geo- logical environment. It is a geological effect （phenomenon） caused or in- fluenced by Nature and （or） human factors that leads to losses to human life, property and the environment.TM Based on their cause, geological disasters can be divided into natural geological and artificial geological disasters. Natural geological disas- ters include those caused by natural effects. These include typhoons, rain- fall, melting snow and earthquakes,

Design of Signal Lamp Filament Monitoring Alarm Instrument

To improve the reliability of the light emitting diode(LED)signal lamp filament current monitoring alarm instrument for metro systems,a new type of hot standby online monitoring apparatus was developed which is based on synchronous transmission data(STD)bus technology.In this system,a double hot standby mode can be achieved by adopting bus arbitration.In addition,to detect the effective value of alternating current which is from 0 to 200 mA in the signal lamp lighting circuit,a precision rectifier signal conditioning circuit and an isolated acquisition circuit were designed.This new type of alarm instrument has high detection accuracy and could meet the functional requirements for metro signal systems after comparing it with some industry products that were applied on the spot.

Study on Various Rectifiers for Fan-Filter Units

The face velocities of the high efficiency particulate air filters and the ultra low penetration airfilters in fan filter units (FFUs) have large relative standard deviation and turbulivity. It seriously affects the unidirectivity of the flow in the unidirectional flow clean zone and cleanroom. The cross contamination in this kind of unidirectional flow area is hardly controlled. It is significant to find optional method for keeping the face velocity uniformity of FFU and reducing the face velocity turbulivity of FFU, furthermore, to keep the cleanliness level under FFUs. The normal and easy method is to add flow rectifiers under filters. FFUs with various flow rectifiers have been tested. The uniformity and turbulivity of facevelocity under the FFU are presented in this paper. The influence of the facevelocity uniformity and turbulivity on the contamination boundary of the unidirectional flow is studiedas well.

钾通道的种类和功能

钾通道在离子通道中种类最多,存在最广泛。目前研究成果表明,钾通道有两大家族,他们的结构和功能各异,主要参与各种生理和病理反应,如细胞膜兴奋性的产生、神经递质的释放、保护心肌和抗心律失常等,而且和学习记忆的损伤、体温调控有着广泛的联系。

Rectifier Configurations Based on Harmonic Injecting and Counteracting Principle

On the basis of detailed analysis of a novel harmonic counteracting method which can be used to effectively compensate the supply line harmonic currents of a passive single phase diode bridge rectifier, this paper presents two simpler single phase diode bridge rectifier configurations and their alternatives which can achieve low supply line current THD(total harmonic distortion) too. Moreover, this paper also proposes a few passive hamonic counteracting networks for multi single phase rectifiers which are connected in parallel.

Varifolds的某些Rectifiability特征

该文证明下面的定理:设一Varifold V具有特征0<lim_(r→0)(μV(Cr(x)))/(r^n)<∞,那么,V是Rectifiable的.另外,该文还给出了一个Varifold的结构表示定理.