Synthesis of a reduction-sensitive Bletilla striata polysaccharide amphiphilic copolymer

Recently, much special attention has been focused on the development of amphiphilic copolymers.Herein, a reduction-sensitive stearic acid grafted-Bletilla striata polysaccharide copolymer（BSP-ss-SA）was synthesized and characterized. BSP-ss-SA copolymer could spontaneously form micelles with an average particle size of（106 ？ 4.36） nm. Particle sizes were dramatically larger under 10 mmol/L dithiothreitol（DTT） than that in absence of 10 mmol/L DTT. Docetaxel loading content and encapsulation efficiency of micelles were 5.94 wt% and 72.75 wt%, respectively. The docetaxel release rate in vitro in micelles could be remarkably accelerated in pH 7.4 phosphate buffer solution（PBS） containing 10 mmol/L DTT compared with that of micelles（0 mmol/L DTT）. Furthermore, MTT results demonstrated the anticancer activities in vitro of docetaxel-loaded BSP-ss-SA micelles on HepG2 were superior to that of docetaxel injection. BSP-ss-SA copolymer might be a promising nanocarrier for cancer chemotherapy drugs.

6T SRAM cell analysis for DRV and read stability

The present paper analyzes the hold and read stability with temperature and aspect ratio variations. To reduce the power dissipation, one of the effective techniques is the supply voltage reduction. At this reduced supply voltage the data must be stable. So, the minimum voltage should be discovered which can also retain the data. This voltage is the data retention voltage（DRV）. The DRV for 6T SRAM cell is estimated and analyzed in this paper.The sensitivity analysis is performed for the DRV variation with the variation in the temperature and aspect ratio of the pull up and pull down transistors. Cadence Virtuoso is used for DRV analysis using 45 nm GPDK technology files. After this, the read stability analysis of 6T SRAM cell in terms of SRRV（supply read retention voltage） and WRRV（wordline read retention voltage） is carried out. Read stability in terms of RSNM can be discovered by accessing the internal storage nodes. But in the case of dense SRAM arrays instead of using internal storage nodes,the stability can be discovered by using direct bit line measurements with the help of SRRV and WRRV. SRRV is used to find the minimum supply voltage for which data can be retained during a read operation. Similarly, WRRV is used to find the boosted value of wordline voltage, for which data can be retained during read operation. The SRRV and WRRV values are then analyzed for different Cell Ratios. The results of SRRV and WRRV are then compared with the reported data for the validation of the accuracy of the results.