It is shown that for laser technologies it was necessary to create a new branch of physics: Relaxed Optics (synthesis of methods of the physical optics, quantum electronics, physical chemistry, physics of irreversible...It is shown that for laser technologies it was necessary to create a new branch of physics: Relaxed Optics (synthesis of methods of the physical optics, quantum electronics, physical chemistry, physics of irreversible phenomena in unitary system). It is allowed to explain complex chain processes of interaction light and matter. Possible applications of Relaxed Optical methods for the modeling of the laser-induced processes phenomena, including laser implantation (surface and subsurface processes), laser-induced optical breakdown (volume processes) and laser annealing of radiation and other defects in solid, are discussed. Perspectives of using these methods for the creation of new laser technologies, including creation new types of optoelectronic devices (heterostructures, diffraction lattices, etc.), resolution the problems of metallurgy, material science, painting, architecture and a building, are analyzed.展开更多
The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and...The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density, Moreover, the relative strength of the Rashba and the Dresselhaus spin-rbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.展开更多
We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain...We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain model, was included in a complementary manner to lattice relaxation. Density functional theory as well as a hybrid functional method based on a plane wave basis set was employed to calculate the lattice structure, elastic constants, electronic properties and optical properties of perovskite BaZrO3. The lattice parameter c exhibited a clear linear dependence on the imposed in-plane strain, but the Poisson＇s ratio caused by internal relaxation was smaller than the elastic deformation, indicating an ＂inelastic＂ or ＂plastic＂ relaxation manner caused by the introduction of internal relaxation. As a result, the related electronic and optical properties of perovskite BaZrO3 were also strongly affected by the in-plane strain, which revealed an effective way to adjust the properties of perovskite BaZrO3 via internal relaxation.展开更多
文摘It is shown that for laser technologies it was necessary to create a new branch of physics: Relaxed Optics (synthesis of methods of the physical optics, quantum electronics, physical chemistry, physics of irreversible phenomena in unitary system). It is allowed to explain complex chain processes of interaction light and matter. Possible applications of Relaxed Optical methods for the modeling of the laser-induced processes phenomena, including laser implantation (surface and subsurface processes), laser-induced optical breakdown (volume processes) and laser annealing of radiation and other defects in solid, are discussed. Perspectives of using these methods for the creation of new laser technologies, including creation new types of optoelectronic devices (heterostructures, diffraction lattices, etc.), resolution the problems of metallurgy, material science, painting, architecture and a building, are analyzed.
基金Supported by the National Natural Science Foundation Program of China under Grant Nos 11274302,11474276 and 61290303
文摘The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al0.3 Gao,TAs quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density, Moreover, the relative strength of the Rashba and the Dresselhaus spin-rbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.
基金Funded by the National Natural Science Foundation of China(No.51502179)the Colleges and Universities in Hebei Province Science and Technology Research Project(No.YQ2014033)the Hebei Key Discipline Construction Project(B2012210004 and E2013210038)
文摘We present the specific ab-initio calculations that detail the variations of perovskite BaZrO3 caused by in-plane strain. Specifically, the internal relaxation, which was not captured in the widely used biaxial strain model, was included in a complementary manner to lattice relaxation. Density functional theory as well as a hybrid functional method based on a plane wave basis set was employed to calculate the lattice structure, elastic constants, electronic properties and optical properties of perovskite BaZrO3. The lattice parameter c exhibited a clear linear dependence on the imposed in-plane strain, but the Poisson＇s ratio caused by internal relaxation was smaller than the elastic deformation, indicating an ＂inelastic＂ or ＂plastic＂ relaxation manner caused by the introduction of internal relaxation. As a result, the related electronic and optical properties of perovskite BaZrO3 were also strongly affected by the in-plane strain, which revealed an effective way to adjust the properties of perovskite BaZrO3 via internal relaxation.
