The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observ...The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observed, depending on the filament morphology after the SET/RESET operation.（i） Tail bits resulting from lateral diffusion of Cu ions introduced an abrupt increase of device resistance from IRS to ultrahigh-resistance state, which mainly happened in IRSS.（ii） Tail bits induced by the vertical diffusion of Cu ions showed a gradual shift of resistance toward lower value. Statistical results show that more than 95% of tail bits are generated in IRSS. To achieve a reliable IRS for multilevel cell（MLC） operation, it is desirable to program the IRS in RESET operation. The mechanism of tail bit generation that is disclosed here provides a clear guideline for the data retention optimization of MLC resistive random-access memory cells.展开更多
As a typical representative of nanomaterials,carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties,multi-dimensionali...As a typical representative of nanomaterials,carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties,multi-dimensionality,multi-hybridization methods,and excellent electronic properties.Especially in the recent years,memristors based on carbon nanomaterials have flourished in the field of building non-volatile memory devices and neuromorphic applications.In the current work,the preparation methods and structural characteristics of carbon nanomaterials of different dimensions were systematically reviewed.Afterwards,in depth discussion on the structural characteristics and working mechanism of memristors based on carbon nanomaterials of different dimensions was conducted.Finally,the potential applications of carbon-based memristors in logic operations,neural network construction,artificial vision systems,artificial tactile systems,and multimodal perception systems were also introduced.It is believed that this paper will provide guidance for the future development of high-quality information storage,high-performance neuromorphic applications,and highsensitivity bionic sensing based on carbon-based memristors.展开更多
The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an el...The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse- induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.展开更多
基金Project supported by the Ministry of Science and Technology of China(Grant Nos.2016YFA0203800,2016YFA0201803,and 2018YFB0407502)the National Natural Science Foundation of China(Grant Nos.61522408,61334007,and 61521064)+1 种基金Beijing Municipal Science&Technology Commission Program,China(Grant No.Z161100000216153)Huawei Data Center Technology Laboratory
文摘The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observed, depending on the filament morphology after the SET/RESET operation.（i） Tail bits resulting from lateral diffusion of Cu ions introduced an abrupt increase of device resistance from IRS to ultrahigh-resistance state, which mainly happened in IRSS.（ii） Tail bits induced by the vertical diffusion of Cu ions showed a gradual shift of resistance toward lower value. Statistical results show that more than 95% of tail bits are generated in IRSS. To achieve a reliable IRS for multilevel cell（MLC） operation, it is desirable to program the IRS in RESET operation. The mechanism of tail bit generation that is disclosed here provides a clear guideline for the data retention optimization of MLC resistive random-access memory cells.
基金supported in part by the National Key Research and Development Program of China under Grant 2021YFF0603500in part by the National Nature Science Foundation of China under Grants 62174068,62311540155,and U22A2014+1 种基金in part by the Shandong Provincial Natural Science Foundation of China under Grant(ZR2023ZD03)in part by the Jinan City University Integration Development Strategy Project under Grant(JNSX2023017).
文摘As a typical representative of nanomaterials,carbon nanomaterials have attracted widespread attention in the construction of electronic devices owing to their unique physical and chemical properties,multi-dimensionality,multi-hybridization methods,and excellent electronic properties.Especially in the recent years,memristors based on carbon nanomaterials have flourished in the field of building non-volatile memory devices and neuromorphic applications.In the current work,the preparation methods and structural characteristics of carbon nanomaterials of different dimensions were systematically reviewed.Afterwards,in depth discussion on the structural characteristics and working mechanism of memristors based on carbon nanomaterials of different dimensions was conducted.Finally,the potential applications of carbon-based memristors in logic operations,neural network construction,artificial vision systems,artificial tactile systems,and multimodal perception systems were also introduced.It is believed that this paper will provide guidance for the future development of high-quality information storage,high-performance neuromorphic applications,and highsensitivity bionic sensing based on carbon-based memristors.
基金Project supported by NASA,the State of Texas through the Center for Advanced Materials,Sharp Laboratories of America,Semiconductor Research Corporation,the R.A.Welch Foundation (Grant No.#E-632)the National Natural Science Foundation of China (Grant No.11074109)+2 种基金the Natural Science Foundation of Jiangsu Province of China (Grant No.SBK200920627)the National Basic Research Program of China (Grant No.2010CB923404)the National "Climbing" Program of China (Grant No.91021003)
文摘The electric-pulse-induced resistive switching effect is studied for Tio.s5Cro.15Ox （TCO） films grown on Ir-Si substrates by pulsed laser deposition. Such a TCO device exhibits bipolar switching behaviour with an electric-pulse- induced resistance ratio as large as about 1000% and threshold voltages smaller than 2 V. The resistive switching characteristics may be understood by resistance changes of a Schottky junction composed of a metal and an n-type semiconductor, and its nonvolatility is attributed to the movement of oxygen vacancies near the interface.
