Using p~＋-type crystalline Si with n~＋-type nanocrystalline Si（nc-Si） and n~＋-type crystalline Si with p~＋-type nc-Si mosaic structures as electrodes,a type of power diode was prepared with epitaxial technique a...Using p~＋-type crystalline Si with n~＋-type nanocrystalline Si（nc-Si） and n~＋-type crystalline Si with p~＋-type nc-Si mosaic structures as electrodes,a type of power diode was prepared with epitaxial technique and plasmaenhanced chemical vapor deposition（PECVD） method.Firstly,the basic p~＋-n^--n~＋-type Si diode was fabricated by epitaxially growing p~＋- and n~＋-type layers on two sides of a lightly doped n^--type Si wafer respectively.Secondly,heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p~＋-type Si side of the basic device to form a component with mosaic anode.Thirdly,heavily boron-doped Si film was deposited on the etched n~＋-type Si side of the second device to form a diode with mosaic anode and mosaic cathode.The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films.Electrical measurements such as capacitancevoltage relation,current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices.The important roles of（n^-）Si/（p~＋）nc-Si and（n^-）Si/（n~＋）nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated.The performance of mosaic devices was compared to that of a basic one.展开更多
基金supported by the National Natural Science Foundation of China(No.61274006)
文摘Using p~＋-type crystalline Si with n~＋-type nanocrystalline Si（nc-Si） and n~＋-type crystalline Si with p~＋-type nc-Si mosaic structures as electrodes,a type of power diode was prepared with epitaxial technique and plasmaenhanced chemical vapor deposition（PECVD） method.Firstly,the basic p~＋-n^--n~＋-type Si diode was fabricated by epitaxially growing p~＋- and n~＋-type layers on two sides of a lightly doped n^--type Si wafer respectively.Secondly,heavily phosphorus-doped Si film was deposited with PECVD on the lithography mask etched p~＋-type Si side of the basic device to form a component with mosaic anode.Thirdly,heavily boron-doped Si film was deposited on the etched n~＋-type Si side of the second device to form a diode with mosaic anode and mosaic cathode.The images of high resolution transmission electronic microscope and patterns of X-ray diffraction reveal nanocrystallization in the phosphorus- and boron-deposited films.Electrical measurements such as capacitancevoltage relation,current-voltage feature and reverse recovery waveform were carried out to clarify the performance of prepared devices.The important roles of（n^-）Si/（p~＋）nc-Si and（n^-）Si/（n~＋）nc-Si junctions in the static and dynamic conduction processes in operating diodes were investigated.The performance of mosaic devices was compared to that of a basic one.
