直流系统是支撑高比例新能源接入与灵活高效用能的重要技术方向。固态式直流断路器(solid state DC circuit breaker,SSCB)具有开断速度极快、无电弧、寿命长等优点,在中低压直流系统的故障保护中得到广泛应用。随着电力电子器件的发展...直流系统是支撑高比例新能源接入与灵活高效用能的重要技术方向。固态式直流断路器(solid state DC circuit breaker,SSCB)具有开断速度极快、无电弧、寿命长等优点,在中低压直流系统的故障保护中得到广泛应用。随着电力电子器件的发展,固态式直流断路器的拓扑结构、工作性能也在不断进步。为此基于逆阻型集成门极换流晶闸管(intergated gate commutate thyristor,IGCT),提出了一种新型的固态式直流断路器结构及设计方法,通流支路采用逆阻IGCT反并联结构实现双向通流,缓冲支路采用金属氧化物避雷器(metal oxide varistor,MOV)-电容结构来抑制过电压,吸能支路采用MOV吸收系统能量。进一步地,给出了关键元器件的参数设计方法,并验证了有效性;设计了性能良好的重力热管散热器,单个模块散热功率可达700 W;提出了主被动结合的控保策略,提高断路器的保护性能。最后,研制了固态式直流断路器样机,可用于750 V以内的低压直流系统,额定通流可达2 kA,可在百微秒内开断10 kA故障电流,成本低、体积小、高可靠,具有良好的应用前景。展开更多
换相失败问题(commutation failure,CF)是电网换相换流高压直流输电技术(line commutated converter high voltage directcurrent,LCC-HVDC)面临的固有难题。为了解决该问题,已有文献主要从拓扑结构、控制策略等方面着手,鲜见抵御换相...换相失败问题(commutation failure,CF)是电网换相换流高压直流输电技术(line commutated converter high voltage directcurrent,LCC-HVDC)面临的固有难题。为了解决该问题,已有文献主要从拓扑结构、控制策略等方面着手,鲜见抵御换相失败的新型换流阀研制及试验研究。该文开展基于大功率逆阻型集成门极换流晶闸管(reverse blocking integrated gate commutated thyristor,RB-IGCT)的新型换流阀试验研究及试验等效性分析。首先,阐释新型换流阀抵御换相失败的原理,并针对新型换流阀不同的工作模式,提出对新型电力电子器件的需求。然后,利用现有的型式试验合成回路平台开展适用于传统晶闸管换流阀的运行试验,并分析试验结果,得出大部分试验项目等效性较好而小熄弧角试验和关断试验等效性较差的结论。最后,针对这两项特殊试验提出新的试验方法和试验电路,可为新型换流阀的研发和应用提供一定的技术基础。展开更多
BACKGROUND Refractory secondary hyperparathyroidism(SHPT)is a common complication observed in patients with end-stage renal disease and can result in ectopic calcification.Metastatic calcification involving the heart ...BACKGROUND Refractory secondary hyperparathyroidism(SHPT)is a common complication observed in patients with end-stage renal disease and can result in ectopic calcification.Metastatic calcification involving the heart valves and the conduction system can easily lead to arrhythmias,including atrioventricular block.This case report describes a maintenance hemodialysis patient with refractory SHPT resulting in a complete atrioventricular block(CAVB),which was eventually reversed to a first-degree atrioventricular block.CASE SUMMARY We present the case of a 31-year-old Asian female who was receiving maintenance hemodialysis because of lupus nephropathy.She developed SHPT,and an electrocardiogram revealed a first-degree atrioventricular block.Then,she underwent parathyroidectomy(PTX)with autotransplantation.Unfortunately,a few years later,she developed SHPT again,and an electrocardiogram revealed a CAVB.A few years after the second PTX surgery,the calcification of the left atrium and left ventricle improved,and her CAVB was reversed.CONCLUSION This case revealed that metastatic cardiac calcification can result in complete atrioventricular blockage.Following parathyroid surgery,calcification of the cardiac conduction system improved,leading to reversal of the atrioventricular block.It is important for dialysis patients to optimize intact parathyroid hormone therapy and pay attention to calcification metastasis.展开更多
To evaluate the security of cipher algo- rithrrs with secret operations, we built a new reverse engineering analysis based on Differential Fault Analysis （DFA） to recover the secret S-boxes in Secret Private Network...To evaluate the security of cipher algo- rithrrs with secret operations, we built a new reverse engineering analysis based on Differential Fault Analysis （DFA） to recover the secret S-boxes in Secret Private Network （SPN） and Feistel structures, which are two of the most typical structures in block ciphers. This paper gives the general definitions of these two structures and proposes the reverse engineering analysis of each structure. Furthermore, we evaluate the complexity of the proposed reverse analyses and theoretically prove the effectiveness of the reverse method. For the Twoflsh-like and AES-like algorithrm, the experimental results verify the correctness and efficiency of the reverse analysis. The proposed reverse analysis can efficiently recover the secret S-boxes in the encryp＇don algorithms writh SPN and Feistel structures. It can successfully recover the Twoflsh- like algorithm in 2.3 s with 256 faults and the AES- like algorithm in 0.33 s with 23 faults.展开更多
In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages （BVs） simultaneously in A1GaN/GaN high-electron mobility transistors （HEMTs）. The mechanism of improving th...In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages （BVs） simultaneously in A1GaN/GaN high-electron mobility transistors （HEMTs）. The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic- drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.展开更多
In this paper, we present the combination of drain field plate （FP） and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN...In this paper, we present the combination of drain field plate （FP） and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors （HEMTs）. Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage （VRB） and the forward blocking voltage （VFB）. The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRB and VFB were improved from -67 V and 134 V to -653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.展开更多
To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor（MOSFET） with a Schottky-drian（SD） and SD-connected semisuperjunctions（S...To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor（MOSFET） with a Schottky-drian（SD） and SD-connected semisuperjunctions（SDD-semi-SJ）,named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional（2D） numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions（SJ） or semisuperjunctions（semi-SJ） for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage（BV） and the specific on-resistance（R_（on）A）.For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration（N）,in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_（on）A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_（on）A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.展开更多
In this paper, by using a block-operator matrix technique, we study mixed-type reverse order laws for {1,3}-, {1,2,3}- and {1,3,4}-generalized inverses over Hilbert spaces. It is shown that and when the ranges of are ...In this paper, by using a block-operator matrix technique, we study mixed-type reverse order laws for {1,3}-, {1,2,3}- and {1,3,4}-generalized inverses over Hilbert spaces. It is shown that and when the ranges of are closed. Moreover, a new equivalent condition of is given.展开更多
a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-pha...a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer)展开更多
基金Supported by Weifang Health and Family Planning Commission Research Project,No.WFWSJK-2021-212.
文摘BACKGROUND Refractory secondary hyperparathyroidism(SHPT)is a common complication observed in patients with end-stage renal disease and can result in ectopic calcification.Metastatic calcification involving the heart valves and the conduction system can easily lead to arrhythmias,including atrioventricular block.This case report describes a maintenance hemodialysis patient with refractory SHPT resulting in a complete atrioventricular block(CAVB),which was eventually reversed to a first-degree atrioventricular block.CASE SUMMARY We present the case of a 31-year-old Asian female who was receiving maintenance hemodialysis because of lupus nephropathy.She developed SHPT,and an electrocardiogram revealed a first-degree atrioventricular block.Then,she underwent parathyroidectomy(PTX)with autotransplantation.Unfortunately,a few years later,she developed SHPT again,and an electrocardiogram revealed a CAVB.A few years after the second PTX surgery,the calcification of the left atrium and left ventricle improved,and her CAVB was reversed.CONCLUSION This case revealed that metastatic cardiac calcification can result in complete atrioventricular blockage.Following parathyroid surgery,calcification of the cardiac conduction system improved,leading to reversal of the atrioventricular block.It is important for dialysis patients to optimize intact parathyroid hormone therapy and pay attention to calcification metastasis.
基金This work was supported by the National Natural Science Foundation of China under Cxants No.60970116, No. 60970115, No. 61202386, No. 61003267.
文摘To evaluate the security of cipher algo- rithrrs with secret operations, we built a new reverse engineering analysis based on Differential Fault Analysis （DFA） to recover the secret S-boxes in Secret Private Network （SPN） and Feistel structures, which are two of the most typical structures in block ciphers. This paper gives the general definitions of these two structures and proposes the reverse engineering analysis of each structure. Furthermore, we evaluate the complexity of the proposed reverse analyses and theoretically prove the effectiveness of the reverse method. For the Twoflsh-like and AES-like algorithrm, the experimental results verify the correctness and efficiency of the reverse analysis. The proposed reverse analysis can efficiently recover the secret S-boxes in the encryp＇don algorithms writh SPN and Feistel structures. It can successfully recover the Twoflsh- like algorithm in 2.3 s with 256 faults and the AES- like algorithm in 0.33 s with 23 faults.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)
文摘In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages （BVs） simultaneously in A1GaN/GaN high-electron mobility transistors （HEMTs）. The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic- drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.
基金supported by the National Natural Science Foundation of China(Grant Nos.61334002 and 61106106)the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory,China(Grant No.ZHD201206)
文摘In this paper, we present the combination of drain field plate （FP） and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors （HEMTs）. Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage （VRB） and the forward blocking voltage （VFB）. The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRB and VFB were improved from -67 V and 134 V to -653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574112,61334002,61306017,61474091,and 61574110)the Natural Science Basic Research Plan in Shaanxi Province of China(Grant No.605119425012)
文摘To enhance the reverse blocking capability with low specific on-resistance,a novel vertical metal-oxidesemiconductor field-effect transistor（MOSFET） with a Schottky-drian（SD） and SD-connected semisuperjunctions（SDD-semi-SJ）,named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional（2D） numerical simulations.The SD contacted with the n-pillar exhibits the Schottky-contact property,and that with the p-pillar the Ohmic-contact property.Based on these features,the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions（SJ） or semisuperjunctions（semi-SJ） for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage（BV） and the specific on-resistance（R_（on）A）.For a given pillar width and n-drift thickness,there exists a proper range of n-drift concentration（N）,in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_（on）A-BV compared to the predication of SJ MOSFET in the forward applications.And what is much valuable,in this proper range of N,the desired BV and good trade-off could be achieved only by determining the pillar thickness,with the top assist layer thickness unchanged.Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_（on）A-BV improvement in SD-D-semi-SJ MOSFET.These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.
文摘In this paper, by using a block-operator matrix technique, we study mixed-type reverse order laws for {1,3}-, {1,2,3}- and {1,3,4}-generalized inverses over Hilbert spaces. It is shown that and when the ranges of are closed. Moreover, a new equivalent condition of is given.
文摘a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer)
