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A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier
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作者 王颖 焦文利 +2 位作者 胡海帆 刘云涛 曹菲 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第5期441-444,共4页
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor(UMOSFET) integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each ce... An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor(UMOSFET) integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET. 展开更多
关键词 ACCUMULATION Schottky source reverse recovery time leakage current
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A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier
2
作者 王颖 焦文利 +2 位作者 胡海帆 刘云涛 曹菲 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第5期445-448,共4页
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor(UMOSFET) integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell... An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor(UMOSFET) integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET. 展开更多
关键词 ACCUMULATION Schottky source reverse recovery time leakage current
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