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Fabrication and Evaluation of Bragg Gratings on Optimally Designed Silicon-on-Insulator Rib Waveguides Using Electron-Beam Lithography
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作者 武志刚 张伟刚 +5 位作者 王志 开桂云 袁树中 董孝义 宇高胜之 和田恭雄 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第8期1347-1350,共4页
The fabrication of Bragg gratings on silicon-on-insulator (SOI) rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental ... The fabrication of Bragg gratings on silicon-on-insulator (SOI) rib waveguides using electron-beam lithography is presented. The grating waveguide is optimally designed for actual photonic integration. Experimental and theoretical evaluations of the Bragg grating are demonstrated. By thinning the SOl device layer and deeply etching the Bragg grating, a large grating coupling coefficient of 30cm^-1 is obtained. 展开更多
关键词 integrated optics Bragg grating SILICON-ON-INSULATOR rib waveguide
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Hot-embossing fabrication of chalcogenide glasses rib waveguide for mid-infrared molecular sensing
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作者 Ting-Yang Yan Xiang Shen +4 位作者 Rong-Ping Wang Guo-Xiang Wang Shi-Xun Dai Tie-Feng Xu Qiu-Hua Nie 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期274-279,共6页
Chalcogenide glasses have shown promise in fabricating mid infrared(MIR) photonic sensing devices due to their excellent optical properties in MIR. In addition, the glass transition temperature of chalcogenide glass... Chalcogenide glasses have shown promise in fabricating mid infrared(MIR) photonic sensing devices due to their excellent optical properties in MIR. In addition, the glass transition temperature of chalcogenide glasses are generally low,making them ideal to create the high-throughput patterns of micro-scale structures based on hot embossing that is alternative to the standard lithographic technology. In this paper, we outline the research progress in the chalcogenide waveguide based on the hot embossing method, and discuss the problems remaining to be solved and the possible solutions. 展开更多
关键词 chalcogenide glasses hot embossing rib waveguides MIR sensing
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Polarization Analysis of an Asymmetrically Etched Rib Waveguide Coupler for Sensing Applications 被引量:1
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作者 Malathi SATHISH Srinivas TALABATTULA 《Photonic Sensors》 SCIE EI CAS 2013年第2期178-183,共6页
Deeply etched rib waveguides on silicon on insulator platform were not addressed well in research publications. We have analyzed single mode condition and polarization independence of a deeply etched rib waveguide (D... Deeply etched rib waveguides on silicon on insulator platform were not addressed well in research publications. We have analyzed single mode condition and polarization independence of a deeply etched rib waveguide (DE-RW) structure from biosensing perspective. With this rib structure, an asymmetrically etched integrated optic directional coupler has been numerically modeled to have the same coupling length for quasi- TE and TM modes. The coupling coefficients with the glucose solution as an upper cladding were calculated using a full vector mode solver, and the bulk refractive index sensitivity of the sensor was found as 28.305 × 10^-2/RIU for a fundamental quasi-TE mode. 展开更多
关键词 Silicon on insulator (SOI) deeply etched rib waveguide asymmetrically etched directional coupler BIOSENSOR
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Magnetostrictive Polarization Compensation on SOI Rib Waveguide
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作者 P.S.Chan H.K. Tsang 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期219-220,共2页
We proposed a novel application of magnetostriction for tuning differential -group- delay (DGD) and polarization- dependent-loss (PDL) of silicon- on -insulator waveguide. A magnetic-field induced change in PDL of ove... We proposed a novel application of magnetostriction for tuning differential -group- delay (DGD) and polarization- dependent-loss (PDL) of silicon- on -insulator waveguide. A magnetic-field induced change in PDL of over 4dB and a change in DGD by Ips was 展开更多
关键词 PDL in on Magnetostrictive Polarization Compensation on SOI rib waveguide of were
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Design of Tapered Rib Spot-Size Converter with Double-Cladding Structure
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作者 杨笛 夏金松 +2 位作者 余金中 陈少武 刘忠立 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第8期913-917,共5页
A novel structure of spot size converter is designed to allow low loss and large alignment tolerance between single mode rib waveguide devices and fiber arrays theoretically.The spot size converter consists of a ta... A novel structure of spot size converter is designed to allow low loss and large alignment tolerance between single mode rib waveguide devices and fiber arrays theoretically.The spot size converter consists of a tapered rib core region and a double cladding region.Through optimizing parameters,an expanded mode field can be tightly confined in the inner cladding and thus radiation loss be reduced largely at the tapered region.The influence of refractive index and thickness of the inner cladding on coupling loss is analyzed in particular.A novel,easy method of fabricating tapered rib spot size converter based on silicon on insulator material is proposed. 展开更多
关键词 spot size converter tapered rib waveguide coupling loss
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Mode analysis and structure parameter optimization of a novel SiGe-OI rib optical waveguide 被引量:4
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作者 冯松 高勇 +1 位作者 杨媛 冯玉春 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第8期90-94,共5页
The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operati... The mode of a novel SiGe-OI optical waveguide is analyzed, and its single-mode conditions are derived. The Ge content and structure parameters of SiGe-OI optical waveguides are respectively optimized. Under an operation wavelength of 1300 nm, the structures of SiGe-OI rib optical waveguides are built and analyzed with Optiwave software, and the optical field and transmission losses of the SiGe-OI rib optical waveguides are analyzed. The optimization results show that when the structure parameters H, h, W are respectively 500 nm, 250 nm, 500 nm and the Ge content is 5%, the total power loss of SiGe-OI rib waveguides is 0.3683 dB/cm considering the loss of radiation outside the waveguides and materials, which is less than the traditional value of 0.5 dB/cm. The analytical technique for SiGe-OI optical waveguides and structure parameters computed by this paper are proved to be accurate and computationally efficient compared with the beam propagation method (BPM) and the experimental results. 展开更多
关键词 SiGe-OI rib optical waveguides mode analysis Ge content structure parameters
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