Ridge Waveguide Electro-Optic Polymer Modulator with a New Kind of Corona Poled Crosslinkable Polyurethane

A polymer electro optic modulator has been fabricated with the functional layer acting as a kind of corona poled crosslinkable polyurethane. The three optical layers, namely waveguide, photolithography and oxygen are fabricated by spin coating. With the Reactive Ion Etching method, the ridge of the waveguide is constructed. With light at 1 31μm being fiber coupled to waveguide, the mode and the modulation properties of these devices are demonstrated in a micron control system.

Optimization of High Power 1.55-μm Single Lateral Mode Fabry-Perot Ridge Waveguide Lasers

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.

Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on Spectroscopy Method

An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.

The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals

An electrically driven, single-longitudinal-mode GaAs based photonic crystal （PC） ridge waveguide （RWG） laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma （ICP） etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.

Supercontinuum Generation in Lithium Niobate Ridge Waveguides Fabricated by Proton Exchange and Ion Beam Enhanced Etching

We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti：sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm （at -30 dB points）, from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.

Broadband and efficient second harmonic generation in LiNbO_(3)-LiTaO_(3) composite ridge waveguides at telecom-band

Broadband nonlinear frequency conversions of optical waves are widely employed in multiple areas of optics and photonics. However, the broadening of conversion bandwidth is often at a cost of reduction in efficiency, which may induce a limitation on practical applications. Here we theoretically propose a novel design of LiNbO_(3) ridge waveguides on LiTaO_(3) substrates which can be used for efficient and broadband second harmonic generation. Through group velocity engineering of the ridge waveguides, acceptance bandwidth over 20 nm with a high conversion efficiency of > 25%W^(-1)·cm^(-2) is achieved at telecom-band.

Fabrication of Windowed Very-Small-Aperture Laser Diodes

A windowed very small aperture laser (VSAL) source for use in high resolution near field optical data storage is fabricated.The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect.It facilitates producing VSAL by simplified technology and improves the laser performance.A VSAL with 400nm small aperture is demonstrated by focused ion beam (FIB) and the output power is 0 3mW at 31mA.

A Single Mode980 nm In Ga As/Ga As/Al Ga As Large Optical Cavity Quantum Well Laser with Low Vertical Divergence Angle

To achieve high optical power as well as low vertical divergence angle,a new kind of optim ized large opti- cal cavity (L OC) structure is applied to a ridge waveguide 980 nm In Ga As/ Ga As/ Al Ga As m ulti- quantum well laser.The optical power density in the waveguide is successfully reduced.The maxim um output power is more than 40 0 m W with a slope efficiency of 0 .89W/ A and the far- field vertical divergence angle is lowered to 2 3°.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

Broadband millimeter-wave metasurface antenna array withprinted ridge gap waveguide for high front-to-back ratio

A novel broadband metasurface (MTS) antenna array with high front-to-back ratio (FBR) is proposed for 28 GHz millimeter-wave applications. With slot pairs loaded on patch cells, an aperturecoupled slotted-mushroom MTS antenna is designed to obtain broadband radiation characteristicswith a compact size. To suppress the backward radiation of this antenna, the printed ridge gapwaveguide (PRGW) technology with a perfect magnetic conductor (PMC) shielding made ofmushroom unit-cells underneath the microstrip feeding line is applied. On this basis, a 4×4 MTSantenna array with the PRGW feed network is developed. Simulated results show that the FBR canbe highly improved by over 16 dB within the entire bandwidth. To validate the design, a prototypeof the proposed antenna is fabricated. Measured results show that an FBR greater than 28 dB canbe obtained over a 24% impedance bandwidth (from 24.9 GHz to 31.7 GHz) with the reflectioncoefficient less than 10 dB. The measured antenna gain ranges from 17 dBi to 19.2 dBi and thecorresponding measured aperture efficiencies are 35% and 45.6%. The measured results alsosuggest that the proposed MTS antenna possesses -35 dB cross-polarization level and stable radiation patterns. In addition, the proposed antenna remains a very low profile of 1.7 mm (0.17λ_(0) at28 GHz). All the achieved features indicate that the proposed MTS antenna is an importantcandidate for B5G and 6G wireless communication.

LiNbO_(3) channel and ridge waveguides based on helium ion implantation combined with lithography and precise diamond dicing

Lithium niobate(LiNbO_(3),LN)channel and ridge waveguides have been successfully fabricated by He ion implantation,which has energy of 500 keV and fluence of 1.5×10^(16)ions/cm^(2) and is combined with lithography and the precise diamond dicing technique.The refractive index profile of the annealed LN planar waveguide was reconstructed.The propagation loss of the channel waveguide with a width of 10μm and that of the ridge waveguides with widths of 25μm and 15μm were investigated by the end-face coupling method.In our work,the factors that affect the waveguide properties of channel and ridge waveguides were revealed.

Porous waveguide facilitated low divergence quantum cascade laser

A quantum cascade laser with a porous waveguide structure emitting at 4.5μm is reported.A branchlike porous structure filled with metal material was fabricated on both sides of the laser ridge by an electrochemical etching process.In contrast to the common ridge waveguide laser,devices with a porous structure give rather better beam quality.Utilizing this porous structure as a high-order mode absorber,the device exhibited fundamental transverse mode emission with a nearly diffraction limited far-field beam divergence angle of 4.9°.

Locally periodically poled LNOI ridge waveguide for second harmonic generation [Invited]

Periodically poled lithium niobate on insulator(LNOI) ridge waveguides are desirable for high-efficiency nonlinear frequency conversions, and the fabrication process of such waveguides is crucial for device performance. In this work, we report fabrication and characterization of locally periodically poled ridge waveguides. Ridge waveguides were fabricated by dry etching, and then the high-voltage pulses were applied to locally poled ridge waveguides. Second harmonic generation with normalized conversion efficiency of 435.5% W^(-1)·cm^(-2) was obtained in the periodically poled LNOI ridge waveguide,which was consistent with the triangular domain structure revealed by confocal microscopy.

LiNbO_3 Self-Aligned Ridge Waveguide with Dielectric Side Buffers

A simple fabrication method of self-aligned ridge waveguides with dielectric side buffers is demonstrated on +Z-cut LiNbO3. The ridge waveguide is fabricated by a combination of the annealed proton exchange process and the proton-exchanged wet etching technique.

Low-loss amorphous Si waveguides with gradient refractive index cladding structure

Amorphous Si waveguides with gradient refractive index cladding structure are proposed and fabricated using plasma-enhanced chemical vapor deposition method.Compared with 6 dB/cm for ridge waveguide without gradient cladding,the propagation loss of the gradient cladding waveguides is less than 1 dB/cm with both TE and TM polarizations.

Modeling of double ridge waveguide using ANN

The ridge waveguide is useful in various microwave applications because it can be operated at a lower frequency and has lower impedance and a wider mode separation than a simple rectangular waveguide. An accurate model is essential for the analysis and design of ridge waveguide that can be obtained using electromag- netic simulations. However, the electromagnetic simula- tion is expensive for its high computational cost. Therefore, artificial neural networks （ANNs） become very useful especially when several model evaluations are required during design and optimization. Recently, ANNs have been used for solving a wide variety of radio frequency （RF） and microwave computer-aided design （CAD） problems. Analysis and design of a double ridge waveguide has been presented in this paper using ANN forward and inverse models. For the analysis, a simple ANN forward model is used where the inputs are geometrical parameters and the outputs are electrical parameters. For the design of RF and microwave components, an inverse model is used where the inputs are electrical parameters and the outputs are geometrical parameters. This paper also presents a comparison of the direct inverse model and the proposed inverse model.

Reactive ion etching of Ti-diffused LiNbO_3 slab waveguides

Reactive ion etching（RIE） of LiNbO_3（LN） in SF_6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides.The samples to be etched are Ti-diffused LN slab waveguides overlaid with a chromium film mask that has a Mach-Zehnder interferometer（MZI） array pattern.The experimental results indicate that the LN-etching rate（R_（LN）） and the Cr-etching rate（R_（Cr）） as well as the rate ratio R_（LN）/R_（Cr） increase with either increasing the radio-frequency（RF） power at a given SF_6 flow rate or increasing the SF_6 flow rate at a fixed RF power.The maximum values of R_（LN） = 43.2 nm/min and R_（LN）/R_（Cr） = 3.27 were achieved with 300 W RF power and 40 sccm SF_6 flow.When the SF_6 flow rate exceeds 40 sccm,an increase in the flow rate causes the etching rates and the rate ratio to decrease.The scanning electron microscope images of the LN ridge prepared after～20 min etching show that the ridge height is 680 nm and the sidewall slope angle is about 60°.

Experimental demonstration of TE/TM polarizationindependent frequency upconversion assisted by polarization coupling

Optical frequency conversion based on the second-order nonlinearity(χ^((2))) only occurs in anisotropic media(or at interfaces) and thus is intrinsically polarization-dependent. But for practical applications, polarization-insensitive or independent operation is highly sought after. Here, by leveraging polarization coupling and second-order nonlinearity, we experimentally demonstrate a paradigm of TE/TM polarization-independent frequency upconversion, i.e., sum frequency generation, in the periodically poled lithium niobate-on-insulator ridge waveguide. The cascading of quasi-phase-matched polarization coupling and nonlinear frequency conversion is exploited. With a proper transverse electric field, TE and TM mode fundamental waves can be frequency-upconverted with an equal efficiency in the frequency converter. The proposed method may find ready application in all-optical wavelength conversion and upconversion detection technologies.

1.5 μm dual-lateral-mode distributed Bragg reflector laser for terahertz excitation

A terahertz excitation source based on a dual-lateral-mode distributed Bragg reflector （DBR） laser working in the 1.5 μm range is experimentally demonstrated. By optimizing the width of the ridge waveguide, the fundamental and the first-order lateral modes are obtained from the laser. The mode spacing between the two modes is 9.68 nm, corresponding to a beat signal of 1.21 THz. By tuning the bias currents of the phase and DBR sections, the wavelengths of the two modes can be tuned by 2 nm, with a small strength difference （〈5 dB） and a large side-mode suppression ratio （SMSR 〉 45 dB）.

High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

To achieve low threshold current as well as high single mode output power, a graded index separate confinement heterostructure （GRIN-SCH） A1GaInAs/A1GaAs quantum well laser with an optimized ridge wave- guide was fabricated. The threshold current was reduced to 8 mA. An output power of 76 mW was achieved at 100 mA current at room temperature, with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3°. The maximum single mode output power of the device reached as high as 450 mW.