Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened an...Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.展开更多
GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etch...GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.展开更多
A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching (ICP) surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of pho...A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching (ICP) surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency (IPCE) shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carder localization and carrier lifetime.展开更多
This study reports the controllable surface roughening of Au-Ag alloy nanoplates via the galvanic replacement reaction between single-crystalline triangular Ag nanoplates and HAuC14 in an aqueous medium. With a combin...This study reports the controllable surface roughening of Au-Ag alloy nanoplates via the galvanic replacement reaction between single-crystalline triangular Ag nanoplates and HAuC14 in an aqueous medium. With a combination of experimental evidence and finite element method (FEM) simulations, improved electromagnetic field (E-field) enhancement around the surface-roughened Au- Ag nanoplates and tunable light absorption in the near-infrared (NIR) region (-800-1,400 nm) are achieved by the synergistic effects of the localized surface plasmon resonance (LSPR) from the maintained triangular shape, the controllable Au-Ag alloy composition, and the increased surface roughness. The NIR light extinction enables an active photothermal effect as well as a high photothermal conversion efficiency (78.5%). The well-maintained triangular shape, surface- roughened evolutions of both micro- and nanostructures, and tunable NIR surface plasmon resonance effect enable potential applications of the Au-Ag alloy nanoplates in surface-enhanced Raman spectroscopic detection of biomolecules through 785-nm laser excitation.展开更多
By using the wafer bonding technique and wet etching process,a wafer bonded thin film AlGaInP LED with wet etched n-AlGaInP surfaces was fabricated.The morphology of the etched surface exhibits a pyramid-like feature....By using the wafer bonding technique and wet etching process,a wafer bonded thin film AlGaInP LED with wet etched n-AlGaInP surfaces was fabricated.The morphology of the etched surface exhibits a pyramid-like feature.The wafer was cut into 270×270μm2 chips and then packaged into TO-18 without epoxy resin.With 20-mA current injection,the light intensity and output power of LED-Ⅰwith surface roughening respectively reach 315 mcd and 4.622 mW,which was 1.7 times higher than that of LED-Ⅱwithout surface roughening.The enhancement of output power in LED-Ⅰcan be attributed to the pyramid-like surface,which not only reduces the total internal reflection at the semiconductor-air interface but also effectively guides more photons into the escape angle for emission from the LED device.展开更多
基金Project supported by the Knowledge Innovation Program of ISCAS(No.08S4060000)
文摘Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes (VLEDs). The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.
基金Project supported by the Production and Research Program of Guangdong Province and Ministry of Education (Grant No.2009B090300338)Guangdong Natural Science Foundation of China (Grant No.8251063101000007)+1 种基金Guangdong Science and Technology Plan of China (Grant No.2008B010200004)the Student Research Project of South China Normal University (Grant No.09XXKC03)
文摘GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.
基金supported by the Special Funds for Major State Basic Research Project of China(Grant Nos.2011CB301900,2012CB619304,and 2010CB327504)the Hi-tech Research Project of China(Grant No.2011AA03A103)+4 种基金the National Nature Science Foundation of China(Grant Nos.60990311,61274003,60936004,and 61176063)the Program for New Century Excellent Talents in University of China(Grant No.NCET-11-0229)the Natural Science Foundation of Jiangsu Province of China(Grant No.BK2011010)the Funds of Key Laboratory of China(Grant No.9140C140102120C14)the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China
文摘A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching (ICP) surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency (IPCE) shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carder localization and carrier lifetime.
基金This work was supported by the National Natural Science Foundation of China (Nos. 91323301, 21322105, and 51372025), the Research Fund for the Doctoral Program of Higher Education of China (No. 2011101120016) and Program for New Century Excellent Talents in University (No. NCET-11-0793). The authors would like to thank Prof. Chen Wang and Prof. Yanjun Guo of National Center for Nanoscience and Technology, China for AFM and SERS measure- ments and helpful discussions, respectively Dr. Haiwei Li for help on BET tests and helpful discussions.
文摘This study reports the controllable surface roughening of Au-Ag alloy nanoplates via the galvanic replacement reaction between single-crystalline triangular Ag nanoplates and HAuC14 in an aqueous medium. With a combination of experimental evidence and finite element method (FEM) simulations, improved electromagnetic field (E-field) enhancement around the surface-roughened Au- Ag nanoplates and tunable light absorption in the near-infrared (NIR) region (-800-1,400 nm) are achieved by the synergistic effects of the localized surface plasmon resonance (LSPR) from the maintained triangular shape, the controllable Au-Ag alloy composition, and the increased surface roughness. The NIR light extinction enables an active photothermal effect as well as a high photothermal conversion efficiency (78.5%). The well-maintained triangular shape, surface- roughened evolutions of both micro- and nanostructures, and tunable NIR surface plasmon resonance effect enable potential applications of the Au-Ag alloy nanoplates in surface-enhanced Raman spectroscopic detection of biomolecules through 785-nm laser excitation.
基金Project supported by the Natural Science Foundation of Beijing,China(No.4092007)the National High Technology Research and Development Program of China(No.2008AA03Z402)+1 种基金the Doctoral Program Foundation of Beijing,China(No.X0002013200801)the Eighth BJUT Technology Fund for Postgraduate Students,China
文摘By using the wafer bonding technique and wet etching process,a wafer bonded thin film AlGaInP LED with wet etched n-AlGaInP surfaces was fabricated.The morphology of the etched surface exhibits a pyramid-like feature.The wafer was cut into 270×270μm2 chips and then packaged into TO-18 without epoxy resin.With 20-mA current injection,the light intensity and output power of LED-Ⅰwith surface roughening respectively reach 315 mcd and 4.622 mW,which was 1.7 times higher than that of LED-Ⅱwithout surface roughening.The enhancement of output power in LED-Ⅰcan be attributed to the pyramid-like surface,which not only reduces the total internal reflection at the semiconductor-air interface but also effectively guides more photons into the escape angle for emission from the LED device.