Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/...Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.展开更多
氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过...氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过浸渍法制备了不同Ru负载量(质量分数分别为0.5%、1.0%和2.0%)的催化剂(分别为0.5%Ru/Si_(3)N_(4)、1.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)),并以商品氮化硅(Si_(3)N_(4)-C)为载体制备了2.0%Ru/Si_(3)N_(4)-C催化剂作为对照组。表征了催化剂的理化性质,测试了其在300℃、0.1 MPa下的CO_(2)加氢反应活性。结果显示,与Si_(3)N_(4)-C相比,Si_(3)N_(4)的比表面积较高(502 m^(2)/g),Si_(3)N_(4)作为载体显著提高了金属分散度,降低了金属粒径,催化剂暴露出更多的活性位点。0.5%Ru/Si_(3)N_(4)的金属粒径较小,展现出强的H_(2)吸附能力,H难以解吸,抑制了中间物种CO加氢生成CH_(4)。随着Ru负载量增加,金属粒径增大,催化剂的CH_(4)选择性更好。Ru/Si_(3)N_(4)系列催化剂中,2.0%Ru/Si_(3)N_(4)的CH_(4)选择性较高(98.8%)。空速为10000 m L/(g·h)时,0.5%Ru/Si_(3)N_(4)的CO选择性为88.2%。与2.0%Ru/Si_(3)N_(4)相比,2.0%Ru/Si_(3)N_(4)-C的金属粒径更大,活性位点较少,活性更低。2.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)-C的CO_(2)转化率分别为53.1%和9.2%。Si_(3)N_(4)有效提高了金属分散度,提高了催化剂的CO_(2)加氢反应活性;通过调控Ru负载量控制催化剂金属粒径,可实现对产物CO或CH_(4)选择性的调控。展开更多
The construction of oxide/metal composite catalysts is a competent means of exploiting the electronic interactions between oxide/metal to enhance catalytic activity.In this work,we construct a novel heterogeneous comp...The construction of oxide/metal composite catalysts is a competent means of exploiting the electronic interactions between oxide/metal to enhance catalytic activity.In this work,we construct a novel heterogeneous composite(Ru/HfO_(2)-NC)with Ru/HfO2nanoparticles nested in nitrogen-doped porous carbon via a zeolitic imidazole frameworks-assisted(ZIF)co-precipitation and calcination approach.In particular,ZIF guides an in-situ construction of nested configuration and confines the scattered nanoparticles.Strikingly,Ru/HfO_(2)-NC exhibits unusual ORR activity,superb durability,and methanol tolerance in0.1 M KOH solution with high half-wave potential(E1/2)of 0.83 V and follows a near-4e-reaction pathway.Additionally,the ZAB assembled with cathodic Ru/HfO_(2)-NC outputs a power density of 157.3 m W cm^(-2),a specific capacity of 775 mA h g-1Zn,and a prolonged lifespan of 258 h at 5 mA cm^(-2).Meanwhile,the catalyst has demonstrated potential applicability in flexible ZAB.As suggested by experimental results and density functional theory(DFT)analysis,the remarkable property possibly originated from the optimization of the adsorption and desorption of reactive intermediates caused by the reconfiguration of the electronic structure between Ru and HfO_(2).展开更多
采用水热-煅烧法制备了磁性镍铁尖晶石载体NiFe_(2)O_(4),再采用浸渍-还原法在载体上负载Ru纳米粒子制备Ru/NiFe_(2)O_(4)催化剂。采用X射线衍射(XRD)、N2吸附-脱附(BET)、NH3程序升温脱附(NH3-TPD)、H_(2)程序升温还原(H_(2)-TPR)、X...采用水热-煅烧法制备了磁性镍铁尖晶石载体NiFe_(2)O_(4),再采用浸渍-还原法在载体上负载Ru纳米粒子制备Ru/NiFe_(2)O_(4)催化剂。采用X射线衍射(XRD)、N2吸附-脱附(BET)、NH3程序升温脱附(NH3-TPD)、H_(2)程序升温还原(H_(2)-TPR)、X射线光电子能谱(XPS)和电感耦合等离子体发射光谱(ICP-OES)测试对催化剂进行表征分析。结果表明,Ru/NiFe_(2)O_(4)催化剂表面氧物种丰富,相较于载体,负载Ru后催化剂比表面积和表面酸量增加,Ru与载体存在相互作用,这可能是催化剂高活性和高稳定性的关键。将催化剂用于5-羟甲基糠醛(HMF)的选择性氧化,负载Ru后,催化剂催化活性显著提升。对反应条件进行优化,在添加0.08 g KHCO3,氧化剂O2压力为1 MPa,反应温度为80℃,使用0.1 g Ru/NiFe_(2)O_(4)催化剂,在水溶液中反应12 h HMF能完全转化,2,5-呋喃二甲酸(FDCA)产率为98.1%。Ru/NiFe_(2)O_(4)循环使用5次后仍能保持较高的活性,催化剂上活性组分Ru不易浸出,并且催化剂具有磁性能便于与反应溶液分离。为今后工业化催化HMF高效选择性氧化合成FDCA提供参考。展开更多
The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study...The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.展开更多
In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on ...In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on a p++-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si heterostructure.Attributed to the p++-GaN capping layer,a good linear ohmic I−V characteristic fea-turing a low-contact resistivity(ρc)of 1.34×10^(−4)Ω·cm^(2) was obtained.High gate leakage associated with the HfO_(2)high-k gate dielectric was effectively blocked by the 5-nm O_(3)-Al_(2)O_(3)insertion layer grown by atomic layer deposition,contributing to a high ION/IOFF ratio of 6×10^(6)and a remarkably reduced subthreshold swing(SS)in the fabricated p-FETs.The proposed structure is compelling for energy-efficient GaN complementary logic(CL)circuits.展开更多
The defect-free structure of Mo-based materials is a“double-edged sword”,which endows the material with excellent stability,but limits its chemical versatility and application in electrochemical hydrogen evolution r...The defect-free structure of Mo-based materials is a“double-edged sword”,which endows the material with excellent stability,but limits its chemical versatility and application in electrochemical hydrogen evolution reaction(HER).Carbon doping engineering is an attractive strategy to effectively improve the performance of Mo-based catalyst and maintain their stability.Herein,we report a cross-linked porous carbon-doped MoO_(2)(C–MoO_(2))-based catalyst Ru/C–MoO_(2) for electrochemical HER,which is prepared by the convenient redox solid-phase reaction(SPR)of porous RuO_(2)/Mo_(2)C composite precursor.Theoretical studies reveal that due to the presence of carbon atoms,the electronic structure of C–MoO_(2) has been properly adjusted,and the loaded small Ru nanoparticles provide a fast water dissociation rate and moderate H adsorption strength.In electrochemical studies under a pH-universal environment,Ru/C–MoO_(2) electrocatalyst exhibits a low overpotential at a current density of 10 mA cm^(-2) and has a low Tafel slope.Meanwhile,Ru/C-MoO_(2) has excellent stability for more than 100 h at an initial current density of 100 mA cm^(-2).展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No.12274108)the Natural Science Foundation of Zhejiang Province,China (Grant Nos.LY23A040008 and LY23A040008)the Basic Scientific Research Project of Wenzhou,China (Grant No.G20220025)。
文摘Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.
文摘氮化硅是一种良好的载体,具有较高的水热稳定性和机械稳定性,其表面的氨基基团能够较好地锚定金属,显著提高金属分散度。但是,商品氮化硅比表面积较低,对金属分散作用仍然有限。因此,以自制的高比表面积氮化硅(Si_(3)N_(4))为载体,通过浸渍法制备了不同Ru负载量(质量分数分别为0.5%、1.0%和2.0%)的催化剂(分别为0.5%Ru/Si_(3)N_(4)、1.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)),并以商品氮化硅(Si_(3)N_(4)-C)为载体制备了2.0%Ru/Si_(3)N_(4)-C催化剂作为对照组。表征了催化剂的理化性质,测试了其在300℃、0.1 MPa下的CO_(2)加氢反应活性。结果显示,与Si_(3)N_(4)-C相比,Si_(3)N_(4)的比表面积较高(502 m^(2)/g),Si_(3)N_(4)作为载体显著提高了金属分散度,降低了金属粒径,催化剂暴露出更多的活性位点。0.5%Ru/Si_(3)N_(4)的金属粒径较小,展现出强的H_(2)吸附能力,H难以解吸,抑制了中间物种CO加氢生成CH_(4)。随着Ru负载量增加,金属粒径增大,催化剂的CH_(4)选择性更好。Ru/Si_(3)N_(4)系列催化剂中,2.0%Ru/Si_(3)N_(4)的CH_(4)选择性较高(98.8%)。空速为10000 m L/(g·h)时,0.5%Ru/Si_(3)N_(4)的CO选择性为88.2%。与2.0%Ru/Si_(3)N_(4)相比,2.0%Ru/Si_(3)N_(4)-C的金属粒径更大,活性位点较少,活性更低。2.0%Ru/Si_(3)N_(4)和2.0%Ru/Si_(3)N_(4)-C的CO_(2)转化率分别为53.1%和9.2%。Si_(3)N_(4)有效提高了金属分散度,提高了催化剂的CO_(2)加氢反应活性;通过调控Ru负载量控制催化剂金属粒径,可实现对产物CO或CH_(4)选择性的调控。
基金supported by the National Natural Science Foundation of China(21965005)the Natural Science Foundation of Guangxi Province(2021GXNSFAA076001)+1 种基金the Project of HighLevel Talents of Guangxi(F-KA18015)Guangxi Technology Base and Talent Subject(GUIKE AD18126001,GUIKE AD20297039)。
文摘The construction of oxide/metal composite catalysts is a competent means of exploiting the electronic interactions between oxide/metal to enhance catalytic activity.In this work,we construct a novel heterogeneous composite(Ru/HfO_(2)-NC)with Ru/HfO2nanoparticles nested in nitrogen-doped porous carbon via a zeolitic imidazole frameworks-assisted(ZIF)co-precipitation and calcination approach.In particular,ZIF guides an in-situ construction of nested configuration and confines the scattered nanoparticles.Strikingly,Ru/HfO_(2)-NC exhibits unusual ORR activity,superb durability,and methanol tolerance in0.1 M KOH solution with high half-wave potential(E1/2)of 0.83 V and follows a near-4e-reaction pathway.Additionally,the ZAB assembled with cathodic Ru/HfO_(2)-NC outputs a power density of 157.3 m W cm^(-2),a specific capacity of 775 mA h g-1Zn,and a prolonged lifespan of 258 h at 5 mA cm^(-2).Meanwhile,the catalyst has demonstrated potential applicability in flexible ZAB.As suggested by experimental results and density functional theory(DFT)analysis,the remarkable property possibly originated from the optimization of the adsorption and desorption of reactive intermediates caused by the reconfiguration of the electronic structure between Ru and HfO_(2).
基金financially supported by the National Key R&D Program of China(No.2021YFB2012100)the National Natural Science Foundation of China(Nos.U19A2087,52172134)+1 种基金the Construction of Innovative Provinces in Hunan Province,China(No.2020GK2062)the State Key Laboratory of Powder Metallurgy,Central South University,China。
文摘采用水热-煅烧法制备了磁性镍铁尖晶石载体NiFe_(2)O_(4),再采用浸渍-还原法在载体上负载Ru纳米粒子制备Ru/NiFe_(2)O_(4)催化剂。采用X射线衍射(XRD)、N2吸附-脱附(BET)、NH3程序升温脱附(NH3-TPD)、H_(2)程序升温还原(H_(2)-TPR)、X射线光电子能谱(XPS)和电感耦合等离子体发射光谱(ICP-OES)测试对催化剂进行表征分析。结果表明,Ru/NiFe_(2)O_(4)催化剂表面氧物种丰富,相较于载体,负载Ru后催化剂比表面积和表面酸量增加,Ru与载体存在相互作用,这可能是催化剂高活性和高稳定性的关键。将催化剂用于5-羟甲基糠醛(HMF)的选择性氧化,负载Ru后,催化剂催化活性显著提升。对反应条件进行优化,在添加0.08 g KHCO3,氧化剂O2压力为1 MPa,反应温度为80℃,使用0.1 g Ru/NiFe_(2)O_(4)催化剂,在水溶液中反应12 h HMF能完全转化,2,5-呋喃二甲酸(FDCA)产率为98.1%。Ru/NiFe_(2)O_(4)循环使用5次后仍能保持较高的活性,催化剂上活性组分Ru不易浸出,并且催化剂具有磁性能便于与反应溶液分离。为今后工业化催化HMF高效选择性氧化合成FDCA提供参考。
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62174059 and 52250281)the Science and Technology Projects of Guangzhou Province of China (Grant No.202201000008)+1 种基金the Guangdong Science and Technology Project-International Cooperation (Grant No.2021A0505030064)the Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials (Grant No.2020B1212060066)。
文摘The discovery of ferroelectricity in HfO_(2) based materials reactivated the research on ferroelectric memory.However,the complete mechanism underlying its ferroelectricity remains to be fully elucidated.In this study,we conducted a systematic study on the microstructures and ferroelectric properties of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films with various annealing rates in the rapid thermal annealing.It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size,reduced surface roughness and a higher portion of orthorhombic phase.Moreover,these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates.The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films,which was weakened with decreasing annealing rate.Our findings revealed that this internal stress,along with the stress originating from the top/bottom electrode,plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films.By carefully controlling the annealing rate,we could effectively regulate the tension stress within HZO thin films,thus achieving precise control over their ferroelectric properties.This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.
基金This work was supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)+4 种基金in part by CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
文摘In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on a p++-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si heterostructure.Attributed to the p++-GaN capping layer,a good linear ohmic I−V characteristic fea-turing a low-contact resistivity(ρc)of 1.34×10^(−4)Ω·cm^(2) was obtained.High gate leakage associated with the HfO_(2)high-k gate dielectric was effectively blocked by the 5-nm O_(3)-Al_(2)O_(3)insertion layer grown by atomic layer deposition,contributing to a high ION/IOFF ratio of 6×10^(6)and a remarkably reduced subthreshold swing(SS)in the fabricated p-FETs.The proposed structure is compelling for energy-efficient GaN complementary logic(CL)circuits.
基金This work was financially supported by the National Natural Science Foundation of China (52122308,21905253,51973200)the Natural Science Foundation of Henan (202300410372).
文摘The defect-free structure of Mo-based materials is a“double-edged sword”,which endows the material with excellent stability,but limits its chemical versatility and application in electrochemical hydrogen evolution reaction(HER).Carbon doping engineering is an attractive strategy to effectively improve the performance of Mo-based catalyst and maintain their stability.Herein,we report a cross-linked porous carbon-doped MoO_(2)(C–MoO_(2))-based catalyst Ru/C–MoO_(2) for electrochemical HER,which is prepared by the convenient redox solid-phase reaction(SPR)of porous RuO_(2)/Mo_(2)C composite precursor.Theoretical studies reveal that due to the presence of carbon atoms,the electronic structure of C–MoO_(2) has been properly adjusted,and the loaded small Ru nanoparticles provide a fast water dissociation rate and moderate H adsorption strength.In electrochemical studies under a pH-universal environment,Ru/C–MoO_(2) electrocatalyst exhibits a low overpotential at a current density of 10 mA cm^(-2) and has a low Tafel slope.Meanwhile,Ru/C-MoO_(2) has excellent stability for more than 100 h at an initial current density of 100 mA cm^(-2).
