Series of TiO 2-ZnO heterojunction composite films with different n（Zn）/n（Ti） ratios were prepared by UDP450 magnetron sputter ion plating equipment, and the mole ratio of Zn to Ti was controlled by adjusting the ...Series of TiO 2-ZnO heterojunction composite films with different n（Zn）/n（Ti） ratios were prepared by UDP450 magnetron sputter ion plating equipment, and the mole ratio of Zn to Ti was controlled by adjusting the current values of sputtering target. The effects of n（Zn）/n（Ti） on the microstructures of TiO2-ZnO films were investigated by SEM, AFM, Raman and XPS, and their photocatalytic decomposition of methyl orange solutions was evaluated. The results show that an increase in n（Zn）/n（Ti） typically results in a decrease in the grain size of composite films firstly and then an increase of grain size, while an increase in n（Zn）/n（Ti） leads to an increase in film roughness firstly and then a decrease in film roughness. Both grain size and roughness of TiO2-ZnO films reach the maximum and minimum at n（Zn）/n（Ti） of 1/9.3, respectively. The n（Zn）/n（Ti） shows little effect on the valences of Zn and Ti elements, which mainly exist in the form of TiO2 and ZnO phases. The n（Zn）/n（Ti） has influence on the amount of anatase/rutile TiO2 heterojunction in the film. With increase of the n（Zn）/n（Ti）, the absorption intensity of the composite film increases and the absorption region extends to 450 nm, which is redshifted as much as 150 nm in comparison with the pure TiO2 films. However, the photocatalytic abilities of heterogeneous composite films do not depend on the n（Zn）/n（Ti） but rather on the microstructures of the TiO2-ZnO composite films. Degradation rate of the film reaches the maximum and the photocatalytic decomposition of pollutants works best when n（Zn）/n（Ti）=1：9.3.展开更多
In order to investigate nanomechanical properties of nanostructured Ti metallic material, pure Ti films were prepared by magnetron sputtering at the bias voltage of 0-140 V. The microstructure of Ti films was characte...In order to investigate nanomechanical properties of nanostructured Ti metallic material, pure Ti films were prepared by magnetron sputtering at the bias voltage of 0-140 V. The microstructure of Ti films was characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM） and high-resolution transmission electron microscopy（HRTEM）. It is interesting to find that the microstructure of pure Ti films was characterized by the composite structure of amorphous-like matrix embodied with nanocrystallines, and the crystallization was improved with the increase of bias voltage. The hardness of Ti films measured by nanoindentation tests shows a linear relationship with grain sizes in the scale of 6-15 nm. However, the pure Ti films exhibit a soft tendency characterized by a smaller slope of Hall-Petch relationship. In addition, the effect of bias voltage on the growth orientation of Ti films was discussed.展开更多
The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature...The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1.展开更多
Heusler Co2FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency fr were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses tRufrom 0 nm to 5 nm...Heusler Co2FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency fr were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses tRufrom 0 nm to 5 nm.It is revealed that the Ru underlayers reduce the grain size of Co2FeSi,dramatically enhance the magnetic anisotropy field HK induced by the internal stress from 242 Oe(1 Oe=79.5775 A·m^-1)to 582 Oe with an increment ratio of 2.4,while a low damping coefficient remains.The result of damping implies that the continuous interface between Ru and Co2FeSi induces a large in-plane anisotropic field without introducing additional external damping.As a result,excellent high-frequency soft magnetic properties with fr up to 6.69 GHz are achieved.展开更多
Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) ...Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.展开更多
围绕压阻传感器领域对高性能类金刚石(Diamond Like Carbon,DLC)薄膜压阻敏感材料的需求,针对金属掺杂DLC存在的载流子输运行为和实际多工况(如温度、湿度等)下压阻性能不明的问题,本工作以Ti-石墨复合拼接靶为靶材,采用高功率脉冲磁控...围绕压阻传感器领域对高性能类金刚石(Diamond Like Carbon,DLC)薄膜压阻敏感材料的需求,针对金属掺杂DLC存在的载流子输运行为和实际多工况(如温度、湿度等)下压阻性能不明的问题,本工作以Ti-石墨复合拼接靶为靶材,采用高功率脉冲磁控溅射技术,高通量制备出4种Ti含量(原子分数为0.43%~4.11%)的Ti掺杂类金刚石(Ti-DLC)薄膜,研究了Ti含量对薄膜组分结构、电学性能、变湿度环境下压阻性能的影响规律。结果表明:Ti含量(原子分数)在0.43%~4.11%范围内,掺杂Ti原子均以固溶形式均匀镶嵌于非晶碳网络中,Ti-DLC薄膜电学行为表现为典型半导体特性,在200~350 K温度范围内,薄膜电阻率均随温度升高而降低。载流子传导机制在200~270 K内为Mott型三维变程跳跃传导,在270~350 K范围内则为热激活传导。Ti-DLC薄膜压阻系数(Gauge Factor,GF)最大值为95.1,在20%~80%相对湿度范围内,所有样品GF均随湿度增加而增大,这可能是引入的固溶Ti原子缩短了导电相之间的平均距离,同时吸附表面水分子导致电阻变化。展开更多
The PZT thin films were prepared on （111）- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb（CH3COO）2], zirconium nitrate [Zr（NO3）4] were used as raw materials. The X-ray diffractometer （XRD） an...The PZT thin films were prepared on （111）- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb（CH3COO）2], zirconium nitrate [Zr（NO3）4] were used as raw materials. The X-ray diffractometer （XRD） and scanning electron microscopy （SEM） were used to characterize the phase structure and surface morphology of the films annealed at 650 ~C but with different holding time. Ferroelectric and dielectric properties of the films were measured by the ferroelectric tester and the precision impedance analyzer, respectively. The PZT thin films were constructed with epoxy resin as a composite structure, and the damping properties of the composite were tested by dynamic mechanical analyzer （DMA）. The results show that the films annealed for 90 minutes present a dense and compact crystal arrangement on the surface; moreover, the films also achieve their best electric quality. At the same time, the largest damping loss factor of the composite constructed with the 90 mins-annealed film shows peak value of 0.9, hi^her than the pure epoxy resin.展开更多
In this paper, Ti-C-N nanocomposite films are deposited under different nitrogen flow rates by pulsed bias arc ion plating using Ti and graphite targets in the Ar/N2 mixture gas. The surface morphologies, compositions...In this paper, Ti-C-N nanocomposite films are deposited under different nitrogen flow rates by pulsed bias arc ion plating using Ti and graphite targets in the Ar/N2 mixture gas. The surface morphologies, compositions, microstructures, and mechanical properties of the Ti-C-N films are investigated systematically by field emission scanning electron mi- croscopy （FE-SEM）, x-ray photoelectron spectroscopy （XPS）, grazing incident x-ray diffraction （GIXRD）, Raman spectra, and nano-indentation. The results show that the nanocrystalline Ti（C,N） phase precipitates in the film from GIXRD and XPS analysis, and Raman spectra prove the presence of diamond-like carbon, indicating the formation of nanocomposite film with microstructures comprising nanocrystalline Ti（C,N） phase embedded into a diamond-like matrix. The nitrogen flow rate has a significant effect on the composition, structure, and properties of the film. The nano-hardness and elastic modulus first increase and then decrease as nitrogen flow rate increases, reaching a maximum of 34.3 GPa and 383.2 GPa, at a nitrogen flow rate of 90 sccm, respectively.展开更多
Effect of increasing content of Ti on the crystalline-to-amorphous transition in alloy film of stainless steel 321 plus Ti synthesized by high rate magnetron sputtering deposition is reported.X-ray diffraction analysi...Effect of increasing content of Ti on the crystalline-to-amorphous transition in alloy film of stainless steel 321 plus Ti synthesized by high rate magnetron sputtering deposition is reported.X-ray diffraction analysis revealed that the microstructure of film was sequently changed from α-Fe,α-Fe-X-phase,microcrystalline+amorphous into amorphous with increasing content of Ti fiom 0—3,3—10,10—18 and 18—30 wt-% respectively.展开更多
The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were...The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.展开更多
We carry out first-principles calculations of Ru（0001） films up to 30 monolayers （MLs） to study the quantum size effect （Q, SE） of Ru films for two cases： the freestanding Ru films and Ru films on Pt（111） sub...We carry out first-principles calculations of Ru（0001） films up to 30 monolayers （MLs） to study the quantum size effect （Q, SE） of Ru films for two cases： the freestanding Ru films and Ru films on Pt（111） substrates. Our studies show that the properties of these films （surface energy, work-function, charge density decay length in a vacuum and chemical reactivity） exhibit pronounced oscillatory behavior as a function of the film thickness, with an oscillation period of about four MLs for both cases due to the relationship of the match between the Fermi wave vector and the film thickness. Due to the localization of d-electron of Ru films, these quantum oscillations almost disappear when the thickness of the film is more than -20 ML for the free standing Ru films, while for the Ru films on Pt substrates the oscillations disappear quickly when the thickness of the film is beyond -13 ML. Our results reveal that the stability and reactivity of the Ru films could be tailored through Q, SE and the Ru bilayer grown on Pt substrates observed in the experiment is also related to the effect.展开更多
Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy （TEM）....Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy （TEM）. It is found that the film is single-crystallized and epitaxially grown on the SrTiO3 substrate forming a flat and distinct interface. Anti-phase domains were identified, and the crystallographic features of mismatch dislocations at the interface between film and substrate were clarified. The high conductivity of the present film was discussed from the viewpoint of Nb dopant and the nitrogen atmosphere.展开更多
基金Project (2010JQ6008) supported by the Natural Science Foundation of Shaanxi Province,China
文摘Series of TiO 2-ZnO heterojunction composite films with different n（Zn）/n（Ti） ratios were prepared by UDP450 magnetron sputter ion plating equipment, and the mole ratio of Zn to Ti was controlled by adjusting the current values of sputtering target. The effects of n（Zn）/n（Ti） on the microstructures of TiO2-ZnO films were investigated by SEM, AFM, Raman and XPS, and their photocatalytic decomposition of methyl orange solutions was evaluated. The results show that an increase in n（Zn）/n（Ti） typically results in a decrease in the grain size of composite films firstly and then an increase of grain size, while an increase in n（Zn）/n（Ti） leads to an increase in film roughness firstly and then a decrease in film roughness. Both grain size and roughness of TiO2-ZnO films reach the maximum and minimum at n（Zn）/n（Ti） of 1/9.3, respectively. The n（Zn）/n（Ti） shows little effect on the valences of Zn and Ti elements, which mainly exist in the form of TiO2 and ZnO phases. The n（Zn）/n（Ti） has influence on the amount of anatase/rutile TiO2 heterojunction in the film. With increase of the n（Zn）/n（Ti）, the absorption intensity of the composite film increases and the absorption region extends to 450 nm, which is redshifted as much as 150 nm in comparison with the pure TiO2 films. However, the photocatalytic abilities of heterogeneous composite films do not depend on the n（Zn）/n（Ti） but rather on the microstructures of the TiO2-ZnO composite films. Degradation rate of the film reaches the maximum and the photocatalytic decomposition of pollutants works best when n（Zn）/n（Ti）=1：9.3.
基金supported by the National Natural Science Foundation of China(Grant No:10274018)the Foundation of Hebei Provincial Education Department(Grant No:002013)the Key Foundation of Hebei Normal University(Grant No:120203).
基金Projects(51102264,51271123)supported by the National Natural Science Foundation of ChinaProjects(5313310202,13ZR1427900)supported by Shanghai Municipal Education Commission,China
文摘In order to investigate nanomechanical properties of nanostructured Ti metallic material, pure Ti films were prepared by magnetron sputtering at the bias voltage of 0-140 V. The microstructure of Ti films was characterized by X-ray diffraction（XRD）, scanning electron microscopy（SEM） and high-resolution transmission electron microscopy（HRTEM）. It is interesting to find that the microstructure of pure Ti films was characterized by the composite structure of amorphous-like matrix embodied with nanocrystallines, and the crystallization was improved with the increase of bias voltage. The hardness of Ti films measured by nanoindentation tests shows a linear relationship with grain sizes in the scale of 6-15 nm. However, the pure Ti films exhibit a soft tendency characterized by a smaller slope of Hall-Petch relationship. In addition, the effect of bias voltage on the growth orientation of Ti films was discussed.
基金This work was financially supported by the National Natural Science Foundation of China (No.10274018) and the Foundation of Hebei Provincial Education Department (No.2002116).
文摘The two series of as-deposited and annealed Ti/Co/Ti thin films were deposited by magnetron sputtering onto glass substrates at room temperature. The structural and magnetic properties of the films at room temperature were investigated as function of Co layer thickness. X-ray diffraction (XRD) profiles show Co nanograins are formed as the hexagonal-close-packed (hcp) structure. The perpendicular coercivity of the Ti(15 nm)/Co(30 nm)/Ti(15 nm) film annealed at 450 ℃ for 30 min is about 288 kA·m-1.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11674187 and 51871127)the Fund from the Technology on Electronic Test&Measurement Laboratory(Grant No.6142001180103)。
文摘Heusler Co2FeSi films with a uniaxial magnetic anisotropy and high ferromagnetic resonance frequency fr were deposited by an oblique sputtering technique on Ru underlayers with various thicknesses tRufrom 0 nm to 5 nm.It is revealed that the Ru underlayers reduce the grain size of Co2FeSi,dramatically enhance the magnetic anisotropy field HK induced by the internal stress from 242 Oe(1 Oe=79.5775 A·m^-1)to 582 Oe with an increment ratio of 2.4,while a low damping coefficient remains.The result of damping implies that the continuous interface between Ru and Co2FeSi induces a large in-plane anisotropic field without introducing additional external damping.As a result,excellent high-frequency soft magnetic properties with fr up to 6.69 GHz are achieved.
基金supported by the National Natural Science Foundation of China (Nos. 52071278, 51827801)the National Key Research and Development Program of China (No. 2018YFA0703603)。
基金Project(51271012)supported by the National Natural Science Foundation of China
文摘Anodized composite films containing Si C nanoparticles were synthesized on Ti6Al4 V alloy by anodic oxidation procedure in C4O6H4Na2 electrolyte. Scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the morphology and composition of the films fabricated in the electrolytes with and without addition of Si C nanoparticles. Results show that Si C particles can be successfully incorporated into the oxide film during the anodizing process and preferentially concentrate within internal cavities and micro-cracks. The ball-on-disk sliding tests indicate that Si C-containing oxide films register much lower wear rate than the oxide films without Si C under dry sliding condition. Si C particles are likely to melt and then are oxidized by frictional heat during sliding tests. Potentiodynamic polarization behavior reveals that the anodized alloy with Si C nanoparticles results in a reduction in passive current density to about 1.54×10-8 A/cm2, which is more than two times lower than that of the Ti O2 film(3.73×10-8 A/cm2). The synthesized composite film has good anti-wear and anti-corrosion properties and the growth mechanism of nanocomposite film is also discussed.
基金Supported by the National Natural Science Foundation of China (No. 50772083)China-Japan Cooperation Program(No. 2010DFA51270)the Fundamental Research Funds for the Central Universities
文摘The PZT thin films were prepared on （111）- Pt/Ti/SiO2/Si substrates by sol-gel method, and lead acetate [Pb（CH3COO）2], zirconium nitrate [Zr（NO3）4] were used as raw materials. The X-ray diffractometer （XRD） and scanning electron microscopy （SEM） were used to characterize the phase structure and surface morphology of the films annealed at 650 ~C but with different holding time. Ferroelectric and dielectric properties of the films were measured by the ferroelectric tester and the precision impedance analyzer, respectively. The PZT thin films were constructed with epoxy resin as a composite structure, and the damping properties of the composite were tested by dynamic mechanical analyzer （DMA）. The results show that the films annealed for 90 minutes present a dense and compact crystal arrangement on the surface; moreover, the films also achieve their best electric quality. At the same time, the largest damping loss factor of the composite constructed with the 90 mins-annealed film shows peak value of 0.9, hi^her than the pure epoxy resin.
基金Project supported by the National Natural Science Foundation of China(Grant No.51271047)
文摘In this paper, Ti-C-N nanocomposite films are deposited under different nitrogen flow rates by pulsed bias arc ion plating using Ti and graphite targets in the Ar/N2 mixture gas. The surface morphologies, compositions, microstructures, and mechanical properties of the Ti-C-N films are investigated systematically by field emission scanning electron mi- croscopy （FE-SEM）, x-ray photoelectron spectroscopy （XPS）, grazing incident x-ray diffraction （GIXRD）, Raman spectra, and nano-indentation. The results show that the nanocrystalline Ti（C,N） phase precipitates in the film from GIXRD and XPS analysis, and Raman spectra prove the presence of diamond-like carbon, indicating the formation of nanocomposite film with microstructures comprising nanocrystalline Ti（C,N） phase embedded into a diamond-like matrix. The nitrogen flow rate has a significant effect on the composition, structure, and properties of the film. The nano-hardness and elastic modulus first increase and then decrease as nitrogen flow rate increases, reaching a maximum of 34.3 GPa and 383.2 GPa, at a nitrogen flow rate of 90 sccm, respectively.
文摘Effect of increasing content of Ti on the crystalline-to-amorphous transition in alloy film of stainless steel 321 plus Ti synthesized by high rate magnetron sputtering deposition is reported.X-ray diffraction analysis revealed that the microstructure of film was sequently changed from α-Fe,α-Fe-X-phase,microcrystalline+amorphous into amorphous with increasing content of Ti fiom 0—3,3—10,10—18 and 18—30 wt-% respectively.
基金the Foundation of Wuhan University of Science and Technology
文摘The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.
文摘We carry out first-principles calculations of Ru（0001） films up to 30 monolayers （MLs） to study the quantum size effect （Q, SE） of Ru films for two cases： the freestanding Ru films and Ru films on Pt（111） substrates. Our studies show that the properties of these films （surface energy, work-function, charge density decay length in a vacuum and chemical reactivity） exhibit pronounced oscillatory behavior as a function of the film thickness, with an oscillation period of about four MLs for both cases due to the relationship of the match between the Fermi wave vector and the film thickness. Due to the localization of d-electron of Ru films, these quantum oscillations almost disappear when the thickness of the film is more than -20 ML for the free standing Ru films, while for the Ru films on Pt substrates the oscillations disappear quickly when the thickness of the film is beyond -13 ML. Our results reveal that the stability and reactivity of the Ru films could be tailored through Q, SE and the Ru bilayer grown on Pt substrates observed in the experiment is also related to the effect.
基金supported by the National Natural Science Foundation of China under Grant No.50325101the Special Funds for the Major State Basic Research Projects of China(Grant No.2002CB613503).
文摘Microstructural characteristics in the BaSrNb0.3Ti0.7O3 thin film, grown on SrTiO3 substrate by computercontrolled laser molecular beam epitaxy, were characterized by means of transmission electron microscopy （TEM）. It is found that the film is single-crystallized and epitaxially grown on the SrTiO3 substrate forming a flat and distinct interface. Anti-phase domains were identified, and the crystallographic features of mismatch dislocations at the interface between film and substrate were clarified. The high conductivity of the present film was discussed from the viewpoint of Nb dopant and the nitrogen atmosphere.
