期刊文献+
共找到4篇文章
< 1 >
每页显示 20 50 100
Measurement of binary phase diagram of Cu_2S-MoS_2 system 被引量:2
1
作者 陈星宇 赵中伟 +1 位作者 郝明明 刘旭恒 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2013年第1期271-275,共5页
A novel method,bath smelting process,was developed to treat molybdenite concentrate aiming at the existing problems of traditional process.To understand the dissolving behavior of MoS2 in white matte,the binary phase ... A novel method,bath smelting process,was developed to treat molybdenite concentrate aiming at the existing problems of traditional process.To understand the dissolving behavior of MoS2 in white matte,the binary phase diagram of Cu2S-Mo2S was measured by the cooling curve method.The result shows that this system is a simple binary eutectic with a eutectic temperature of(1117.0±3.0)℃ and a eutectic composition of(1.70±0.20)% MoS2 in mass fraction.When the MoS2 addition exceeds 4.48%,MoS2 and Cu2S can form the ternary compound containing CuMo2S3 or Cu2Mo6S8.In the temperature range of copper smelting,1200-1300℃,molybdenite can dissolve in the cuprous sulfide.At 1200℃,the solubility of molybdenite can reach 14.8%. 展开更多
关键词 binary system Cu2s-mos2 bath smelting process SOLUBILITY EUTECTIC MOLYBDENITE
下载PDF
噪声抑制下的语音质量评估方法研究
2
作者 掌帆 《信息通信》 2019年第11期56-58,共3页
现代通信设备可能暴露在各种噪声环境中,有效量化终端的噪声抑制效果尤为重要。针对这一问题,引入了ITUT P.835建议书中的S-MOS、N-MOS、G-MOS三维评级方法,对ETSI EG 202396-3、ETSI TS 103106及ETSI TS 103281三种语音质量评估方法进... 现代通信设备可能暴露在各种噪声环境中,有效量化终端的噪声抑制效果尤为重要。针对这一问题,引入了ITUT P.835建议书中的S-MOS、N-MOS、G-MOS三维评级方法,对ETSI EG 202396-3、ETSI TS 103106及ETSI TS 103281三种语音质量评估方法进行梳理,说明了各自的应用场景,最后着重分析了三种评估方法的模型和算法差异。 展开更多
关键词 语音质量 噪声抑制 s-mos N-MOS G-MOS
下载PDF
One-step fabrication of ultrathin layered 1T@2H phase MoS2 with high catalytic activity based counter electrode for photovoltaic devices 被引量:3
3
作者 K.Silambarasan J.Archana +5 位作者 S.Harish M.Navaneethan R.Sankar Ganesh S.Ponnusamy C.Muthamizhchelvan K.Hara 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2020年第16期94-101,共8页
The metallic phase of molybdenum disulfide(M-MoS2)and semiconductor phase of molybdenum disulfide(S-MoS2)was synthesized by hydrothermal method,using cetyltrimethylammonium bromide(CTAB)as a surfactant.The structural ... The metallic phase of molybdenum disulfide(M-MoS2)and semiconductor phase of molybdenum disulfide(S-MoS2)was synthesized by hydrothermal method,using cetyltrimethylammonium bromide(CTAB)as a surfactant.The structural and elemental composition confirmed the formation of M-MoS2 and S-MoS2.From the morphological analysis layered nanosheets with an inter-layered distance of 0.62 nm for M-MoS2 and 0.95 nm for S-MoS2 was observed.Fourier-transform infrared(FT-IR)spectral analysis was used to investigate the existence of CTAB functional group.The peak at 885 cm-1 attributed to the CH3 bond which confirmed the presence of CTAB in the S-MoS2.The anodic and cathodic peak separation(Epp)values of the counter electrode(CE)has showed at 468.28 mV(M-MoS2)and 540.87 mV(S-MoS2).The M-MoS2 thin film shows higher catalytic activity when compared to S-MoS2 due to more active sites and electronic conductivity.The power conversion efficiency of M-MoS2 CE based device exhibits higher efficiency compared to S-MoS2 CE based device. 展开更多
关键词 M-MoS2 s-mos2 Layered nanosheet CATALYTIC Power conversion
原文传递
新型CIGS阻挡层多横向界面Mo的特性及对器件性能的影响 被引量:2
4
作者 李博研 刘芳芳 +1 位作者 孙云 林列 《光电子.激光》 EI CAS CSCD 北大核心 2018年第2期129-132,共4页
采用磁控溅射方法,在不锈钢箔上制备多横向界面Mo(M-Mo,multi-transverse interface Mo)和单横向界面Mo(S-Mo)薄膜,并利用共蒸发三步法分别在M-Mo和S-Mo薄膜上制备Cu(In,Ga)Se_2(CIGS)薄膜及器件。通过二次离子质谱仪(SIMS)、X射线衍射... 采用磁控溅射方法,在不锈钢箔上制备多横向界面Mo(M-Mo,multi-transverse interface Mo)和单横向界面Mo(S-Mo)薄膜,并利用共蒸发三步法分别在M-Mo和S-Mo薄膜上制备Cu(In,Ga)Se_2(CIGS)薄膜及器件。通过二次离子质谱仪(SIMS)、X射线衍射仪(XRD)和扫描电子显微镜(SEM)研究了不同结构的Mo薄膜对CIGS影响。通过I-V测试,表征M-Mo和S-Mo作为背电极的CIGS电池电学性能。XRD结果显示,M-Mo和S-Mo薄膜均以(110)为择优取向。SEM结果显示,M-Mo薄膜相对于S-Mo,薄膜晶粒较小,粗糙度较大。J-V测试结果显示,M-Mo薄膜作为背电极的电池的开路电压Voc、短路电流Jsc和填充因子(FF)均有所提高。 展开更多
关键词 Cu(In Ga)Sez(cIGs) 多横向界面Mo薄膜(M-Mo) 单横向界面Mo薄膜(s-mo) Fe 扩散
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部