Optimization of ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al Layers Configuration for OLED and Study of Its Optical and Electrical Characteristics

Nowadays,OLEDs have shown aesthetic potential in smart cards,sensor displays,other electronic devices,sensitive medical devices and signal monitoring etc.due to their wide range of applications like low power consumption,high contrast ratio,speed highly electroluminescent,wide viewing angle and fast response time.In this paper,a highly efficient organic LED ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al with low turn-on voltage and high optically efficiency is presented including electrical and optical characteristics.The simulation of electrical characteristics like current versus applied voltage,current density versus applied voltage,recombination prefactor versus excess carrier density characteristics and optical characteristics like light flux versus current density,light flux versus applied voltage and optical efficiency versus applied voltage has been explained.The physical design,working principle and thickness of different layers along with the process of formation of singlet and triplet excitons are discussed in detail.Here double electron transport layer(ETL),cathode layers are used to enhance the electrical and optical efficiency of OLED.The operating voltage is found to be~3.2 V for the ITO/V_(2)O_(5)/Alq3/TPBi/BPhen/LiF/Al heterostructure based OLED.The designed organic LED has achieved the maximum optical efficiency at 3 V.

Effect of High Temperature Annealing on Characteristics of 4H Silicon Carbide MESFET

For very high temperature annealing (1620℃) after ion implantation for 4H silicon carbide (4H SiC),the residual components of Al and O in the alundum furnace impact seriously on the surface of material,which yields the derivation of SiOC.This causes a significant degradation of the 4H SiC surface characteristics according to the results of surface composition analysis.As validity,Ni/SiC ohmic contact measurement illustrates a higher specific contact resistance than the normal value by a factor of 2～3.Consequently the MESFET fabricated with this kind of 4H SiC material results in a degraded I V output performance compared with that of normal 4H SiC MESFET.

The Convergence Characteristic of the Forward I-V Characteristic Curves of a Semiconductor Silicon Barrier at Different Temperatures

The /-V-（T） characteristic curves of p-n junctions with the forward voltage as the independent variable, the logarithm of forward current as the dependent variable, and the junction temperature as the parameter, almost converge at one point in the first quadrant. The voltage corresponding with the convergence point nearly equals the bandgap of the semiconductor material. This convergence point can be used to obtain the I-V characteristic curve at any temperature.

Nonlinear Current-Voltage Characteristics and Electroluminescence of cBN Crystal

The current-voltage（I-V） characteristics of cBN crystal sandwiched between two metallic electrodes are measured and found to be nonlinear. Over 20 samples are measured at room temperature with various electrodes, and the resulting curves are all similar in shape. When a voltage of about 560V is applied to the cBN crystal, the emitted light is visible to the naked eye in a dark room. We explain these phenomena by the space charge limited current and the electronic transition between the X and Г valleys of the conduction band.

Analysis of the Pump-turbine S Characteristics Using the Detached Eddy Simulation Method

Current research on pump-turbine units is focused on the unstable operation at off-design conditions, with the characteristic curves in generating mode being S-shaped. Unlike in the traditional water turbines, pump-turbine operation along the S-shaped curve can lead to difficulties during load rejection with unusual increases in the water pressure, which leads to machine vibrations. This paper describes both model tests and numerical simulations. A reduced scale model of a low specific speed pump-turbine was used for the performance tests, with comparisons to computational fluid dynamics（CFD） results. Predictions using the detached eddy simulation（DES） turbulence model, which is a combined Reynolds averaged Naviers-Stokes（RANS） and large eddy simulation（LES） model, are compared with the two-equation turbulence mode results. The external characteristics as well as the internal flow are for various guide vane openings to understand the unsteady flow along the so called S characteristics of a pump-turbine. Comparison of the experimental data with the CFD results for various conditions and times shows that DES model gives better agreement with experimental data than the two-equation turbulence model. For low flow conditions, the centrifugal forces and the large incident angle create large vortices between the guide vanes and the runner inlet in the runner passage, which is the main factor leading to the S-shaped characteristics. The turbulence model used here gives more accurate simulations of the internal flow characteristics of the pump-turbine and a more detailed force analysis which shows the mechanisms controlling of the S characteristics.

The influences of model parameters on the characteristics of memristors

As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.

Current–voltage characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field

Current-voltage （l-V） characteristics of hydrogen DC plasma torches with different sizes in an external axial magnetic field under atmospheric pressure are reported. Three anodes with different diameters are adopted in a 50-kW torch： 25 mm, 30 mm, and 35 nun, respectively. Two different diameters of anodes, that is, 100 mm and 130 mm, are adopted in a 1-MW plasma torch. The arc voltage shows a negative trend with the increase of arc current under the operating regimes. On the contrary, arc voltage shows a positive trend as the flow rate of carder gas increases, and a similar trend is found with increasing the external magnetic flux density. A similarity formula is constructed to correlate the experimental data of the torches mentioned above. Linear fitting shows that the Pearson correlation coefficient is 0.9958.

Analysis of Electrical Characteristics of Photovoltaic Single Crystal Silicon Solar Cells at Outdoor Measurements

The electrical performance of a photovoltaic (PV) silicon solar cell is described by its current–voltage (I–V) character-istic curve, which is in turn determined by device and material properties. In this study, an investigation of the performance and device parameters of photovoltaic single crystalline silicon (Si.) solar cell of the construction n+pp++ PESC(Passivatted Emitter Solar Cell) at different conditions of solar irradiance, title angle and mirror boosting effects had been studied. Also the paper reports on the performance data of the Si. cell, using standard I–V characteristic curves to obtain output parameters and to show that there are possible performance degrading defects presents.

Characteristics and Thermal Efficiency of a Non-transferred DC Plasma Spraying Torch Under Low Pressure

Current-voltage （I-V） characteristics of a non-transferred DC arc plasma spray torch operated in argon at vacuum are reported. The arc voltage is of negative characteristics for a current below 200 A, fiat for a current between 200 A to 250 A and positive for a current beyond 250 A. The voltage increases slowly with the increase in carrier gas of arc. The rate of change in voltage with currents is about 3-4 V/100 A at a gas flow rate of about 1-1.5 V/10 standard liter per minute （slpm）. The I-V characteristics of the DC plasma torch are of a shape of hyperbola. Arc power increases with the argon flow rate. and the thermal efficiency of the torch acts in a similar way. The thermal efficiency of the non-transferred DC plasmatron is about 65-78%.

F4-TCNQ concentration dependence of the current voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si(MPS) Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

Effect of Temperature on I-V Characteristic for ZnO/CuO

Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO) has gained substantial attention owing to many outstanding properties. ZnO besides its wide band gap of 3.34 eV exhibits a relatively large excitons binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO) has a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. So in this thesis, eight samples of CuO/ZnO junction were synthesized and exposed to temperatures 60, 70, 80, 90, 100, 110, 120 and 130. The electrical properties of Schottky diode junctions were analyzed by I-V measurements under the influence of direct solar radiation and, lag of radiation (darkness) which shows the semi-logarithmic I-V characteristic curve of the fabricated photodiodes. Also energy band gap was estimated and the morphology and particle sizes of the as-prepared sample were determined by SEM. The SEM images of ZnO + CuO sample films were annealed at 60°C to 130°C step 10.

Analysis on Characteristic of Static Induction Transistor Using Mirror Method

A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinched-off factor;gate efficiency η decreases as the gate dimension α 2 and shifted gate voltage are minished,and what differs from the first-order theory is that η will tend to zero at the shifted gate voltage tends to zero when V D=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triode-like and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.

Study on S-shaped characteristic of Francis reversible unit by on-site test and CFD simulation

The operation parameters （vibration, shaft displacement and pressure fluctuation） of No. 1 Francis reversible unit of Baoquan pumped-storage power station were measured on site in the no-load mode at net heads of 518.04, 522.01 and 530.38 m, re- spectively. The rotational speed fluctuations in the no-load mode at three net heads were beyond synchronization requirement with obvious S-shaped characteristic, and misaligned guide vanes （MGV） had to be put into use for synchronization. Further analysis demonstrated that the rotating frequency signal was generally dominant in vibration and shaft displacement mixing signal in the no-load mode, while the frequency domain was wide without an obvious main frequency in pressure fluctuation mixing signal. Besides, the SSTκ-ω turbulence model was adopted to simulate the four quadrant characteristic curves of Baoquan model pump-turbine at three gate openings, and the relative error between simulation results and model test data was within ±6%, indicating that the simulation method in this paper is feasible and S-shaped characteristic of the pump-turbine can be simulated with CFD method.

High Energy X-Ray Dosimetry Using(ZnO)_(0.2)(TeO_(2))_(0.8)Thin Film-based Real-time X-Ray Sensor

This study reports the dosimetric response of a(ZnO)_(0.2)(TeO_(2))_(0.8)thin film sensor irradiated with high-energy X-ray radiation at various doses.The spray pyrolysis method was used for the film deposition on soda-lime glass substrate using zinc acetate dehydrate and tellurium dioxide powder as the starting precursors.The structural and morphological properties of the film were determined.The I-V characteristics measurements were performed during irradiation with a 6 MV X-ray beam from a Linac.The results revealed that the XRD pattern of the AS-deposited thin film is non-crystalline(amorphous)in nature.The FESEM image shows the non-uniform shape of nanoparticles agglomerated separately,and the EDX spectrum shows the presence of Te,Zn,and O in the film.The I-V characteristics measurements indicate that the current density increases linearly with X-ray doses(0-250 cGy)for all applied voltages(1-6 V).The sensitivity of the thin film sensor has been found to be in the range of 0.37-0.94 mA/cm^(2)/Gy.The current-voltage measurement test for fading normalised in percentage to day 0 was found in the order of day 0>day 15>day 30>day 1>day 2.These results are expected to be beneficial for fabricating cheap and practical X-ray sensors.

Statistically modeling I-V characteristics of CNT-FET with LASSO

With the advent ofinternet of things （lOT）, the need for studying new material and devices for various applications is increasing. Traditionally we build compact models for transistors on the basis of physics. But physi- cal models are expensive and need a very long time to adjust for non-ideal effects. As the vision for the application of many novel devices is not certain or the manufacture process is not mature, deriving generalized accurate physi- cal models for such devices is very strenuous, whereas statistical modeling is becoming a potential method because of its data oriented property and fast implementation. In this paper, one classical statistical regression method, LASSO, is used to model the I-V characteristics of CNT-FET and a pseudo-PMOS inverter simulation based on the trained model is implemented in Cadence. The normalized relative mean square prediction error of the trained model versus experiment sample data and the simulation results show that the model is acceptable for digital circuit static simulation. And such modeling methodology can extend to general devices.

Using I-V characteristics to investigate selected contacts for SnO_2:F thin films

Fluorine doped tin oxide （SnO2：F） thin films were prepared on glass substrates by the spray pyrolysis （SP） technique at different substrate temperatures between 380480 ℃. The microstructure of the films was explored using scanning electron microscope observations. An investigation of selected contacts for the films was performed through the analysis of the I-V measurements which were taken in the dark at room temperature. Indium, aluminum and silver were selected as contacts where two strips of each metal were vacuum-evaporated on the surface of the film. The resistivity of the films was estimated from the linear I-V plots. It was found that the smallest resistivity was obtained using silver contacts, while the largest resistivity was obtained by using indium contacts. This is because silver diffuses in the film and participates in doping, while aluminum and indium cause compensation effects when they diffuse in the film. The best linear fit parameters are those of films with aluminum contacts, and the worst ones are those of films with indium contacts. Annealing was found to improve the electrical properties of the films, especially those deposited at a low substrate temperature. This is because it is expected to encourage crystal growth and to reduce the contact potential which leads to the formation of an alloy. Annealed films are more stable than un-annealed ones.

The effect of annealing on structural,optical and electrical properties of ZnS/porous silicon composites

ZnS films were prepared by pulsed laser deposition （PLD） on porous silicon （PS） substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction （XRD）, scanning electron microscope （SEM）, photoluminescence （PL） and I-V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS （111） direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.

Analysis of optoelectronic properties of TiO_2 nanowiers/Si heterojunction arrays

The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.

Flow-Induced Instabilities in Pump-Turbines in China

The stability of pump-turbines is of great importance to the operation of pumped storage power （PSP） stations. Both hydraulic instabilities and operational instabilities have been reported in PSP stations in China. In order to provide a reference to the engineers and scientists working on pump-turbines, this paper summarizes the hydraulic instabilities and performance characteristics that promote the operational instabilities encountered in pump-turbine operations in China. Definitions, analytical methods, numerical and experimental studies, and main results are clarified. Precautions and countermeasures are also provided based on a literature review. The gaps between present studies and the need for engineering practice are pointed out.

Transient and Steady State Currents of Bisphenol A Corncobs Sample

Transient current (I-t), current-voltage (I-V) characteristics, and dc conductivity ln(σ) for bisphenol A corn-cobs (BPACC) sample were investigated. At higher temperatures, I-V characteristics reveal that the dc cur-rent for the sample undergoes two regions one due to ohmic conduction and the other has been attributed to Space charge limited current (SCLC). The activation energy (Ea), the electron mobility μo), effective electron mobility ?μe), the concentration of the charge’s concentrations in conduction band, trapping factor (θ) and the trap concentration (Nt) were calculated. At lower temperatures, the dc current exhibits a peculiar behavior for I-t regime and I-V characteristics. Transient current of BPACC sample exhibits approximately constant value at constant electric field and it has saturation value for I-V characteristics. The attained results suggest strongly the applicability of this material in the electrical applications.