A polymer electro optic modulator has been fabricated with the functional layer acting as a kind of corona poled crosslinkable polyurethane. The three optical layers, namely waveguide, photolithography and oxygen are...A polymer electro optic modulator has been fabricated with the functional layer acting as a kind of corona poled crosslinkable polyurethane. The three optical layers, namely waveguide, photolithography and oxygen are fabricated by spin coating. With the Reactive Ion Etching method, the ridge of the waveguide is constructed. With light at 1 31μm being fiber coupled to waveguide, the mode and the modulation properties of these devices are demonstrated in a micron control system.展开更多
An electrically driven, single-longitudinal-mode GaAs based photonic crystal （PC） ridge waveguide （RWG） laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achiev...An electrically driven, single-longitudinal-mode GaAs based photonic crystal （PC） ridge waveguide （RWG） laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma （ICP） etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.展开更多
An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of stra...An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.展开更多
Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different wave...Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.展开更多
We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV co...We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti：sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm （at -30 dB points）, from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.展开更多
An experimental way for the thermal characterization ofsemiconductor lasers based on I-V method under pulse drivingconditions has been developed, with which the thermal characteristicsof strain compensated 1.3 μm InA...An experimental way for the thermal characterization ofsemiconductor lasers based on I-V method under pulse drivingconditions has been developed, with which the thermal characteristicsof strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laserchips have been investigated. The results show that, by measuring andanalyzing the I- V characteristics under appropriate pulse drivingconditions at different has sink Temperatures, the thermal resistanceof the laser diodes could be easily deduced. The driving Current andjunction voltage waveforms of the laser ships under different pulsedriving Conditions are also discussed.展开更多
Broadband nonlinear frequency conversions of optical waves are widely employed in multiple areas of optics and photonics. However, the broadening of conversion bandwidth is often at a cost of reduction in efficiency, ...Broadband nonlinear frequency conversions of optical waves are widely employed in multiple areas of optics and photonics. However, the broadening of conversion bandwidth is often at a cost of reduction in efficiency, which may induce a limitation on practical applications. Here we theoretically propose a novel design of LiNbO_(3) ridge waveguides on LiTaO_(3) substrates which can be used for efficient and broadband second harmonic generation. Through group velocity engineering of the ridge waveguides, acceptance bandwidth over 20 nm with a high conversion efficiency of > 25%W^(-1)·cm^(-2) is achieved at telecom-band.展开更多
The dispersion characteristics and transverse field distribution of the fundamental and higher order modes are analyzed for polymeric ridge multimode waveguide by a new technique which is based on the combination of t...The dispersion characteristics and transverse field distribution of the fundamental and higher order modes are analyzed for polymeric ridge multimode waveguide by a new technique which is based on the combination of the effective index method and the variational method. An algorithm is implemented to study the effect of the structure parameters and dimensions on the dispersion curves. The optical field distribution of the fundamental and higher order modes for TM modes are computed. The single mode conditions of polymeric ridge waveguide are obtained. The relationship between the curvature radius and the bending loss of S-shaped ridge waveguide are studied with wide-angle finite-difference beam propagation method and effective index method. The conclusion is: when the curvature radius is larger than 5000 μm, the bending loss will not decrease distinctly even if the curvature radius increases, and the light can propagate stably in the S-shaped ridge waveguide.展开更多
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and ...Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.展开更多
Lithium niobate(LiNbO_(3),LN)channel and ridge waveguides have been successfully fabricated by He ion implantation,which has energy of 500 keV and fluence of 1.5×10^(16)ions/cm^(2) and is combined with lithograph...Lithium niobate(LiNbO_(3),LN)channel and ridge waveguides have been successfully fabricated by He ion implantation,which has energy of 500 keV and fluence of 1.5×10^(16)ions/cm^(2) and is combined with lithography and the precise diamond dicing technique.The refractive index profile of the annealed LN planar waveguide was reconstructed.The propagation loss of the channel waveguide with a width of 10μm and that of the ridge waveguides with widths of 25μm and 15μm were investigated by the end-face coupling method.In our work,the factors that affect the waveguide properties of channel and ridge waveguides were revealed.展开更多
Periodically poled lithium niobate on insulator(LNOI) ridge waveguides are desirable for high-efficiency nonlinear frequency conversions, and the fabrication process of such waveguides is crucial for device performanc...Periodically poled lithium niobate on insulator(LNOI) ridge waveguides are desirable for high-efficiency nonlinear frequency conversions, and the fabrication process of such waveguides is crucial for device performance. In this work, we report fabrication and characterization of locally periodically poled ridge waveguides. Ridge waveguides were fabricated by dry etching, and then the high-voltage pulses were applied to locally poled ridge waveguides. Second harmonic generation with normalized conversion efficiency of 435.5% W^(-1)·cm^(-2) was obtained in the periodically poled LNOI ridge waveguide,which was consistent with the triangular domain structure revealed by confocal microscopy.展开更多
Highly strained InGaAs ridge waveguide lasers were fabricated with pulsed anodic oxidation. The laser structure was grown by molecular beam epitaxy (MBE) system. The output powers up to 50 mW per facet in CW mode were...Highly strained InGaAs ridge waveguide lasers were fabricated with pulsed anodic oxidation. The laser structure was grown by molecular beam epitaxy (MBE) system. The output powers up to 50 mW per facet in CW mode were reached at room temperature for the 4 μm stripe lasers. The threshold current density of 300 A/cm2 was achieved with 600 μm cavity length. The emission wavelength at 100 mA was 1.19 μm. The slope efficiency was 0.45 W/A in linear output region of light-current characteristics. The laser characteristic temperature was 129 K (20°C–100°C).展开更多
文摘A polymer electro optic modulator has been fabricated with the functional layer acting as a kind of corona poled crosslinkable polyurethane. The three optical layers, namely waveguide, photolithography and oxygen are fabricated by spin coating. With the Reactive Ion Etching method, the ridge of the waveguide is constructed. With light at 1 31μm being fiber coupled to waveguide, the mode and the modulation properties of these devices are demonstrated in a micron control system.
基金Project supported by the National Natural Science Foundation of China (Grant No. 91121019)the National Basic Research Program of China (Grant No. 2013CB632105)
文摘An electrically driven, single-longitudinal-mode GaAs based photonic crystal （PC） ridge waveguide （RWG） laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma （ICP） etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.
文摘An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274046 and 61474111the National Basic Research Program of China under Grant No 2013AA014202
文摘Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61575129 and 11375105the Postdoctoral Science Foundation of China under Grant No 2016M602511+1 种基金the Shenzhen Science and Technology Planning under Grant No JCYJ20160422142912923the State Key Laboratory of Nuclear Physics and Technology,Peking University
文摘We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti：sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm （at -30 dB points）, from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.
文摘An experimental way for the thermal characterization ofsemiconductor lasers based on I-V method under pulse drivingconditions has been developed, with which the thermal characteristicsof strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laserchips have been investigated. The results show that, by measuring andanalyzing the I- V characteristics under appropriate pulse drivingconditions at different has sink Temperatures, the thermal resistanceof the laser diodes could be easily deduced. The driving Current andjunction voltage waveforms of the laser ships under different pulsedriving Conditions are also discussed.
文摘Broadband nonlinear frequency conversions of optical waves are widely employed in multiple areas of optics and photonics. However, the broadening of conversion bandwidth is often at a cost of reduction in efficiency, which may induce a limitation on practical applications. Here we theoretically propose a novel design of LiNbO_(3) ridge waveguides on LiTaO_(3) substrates which can be used for efficient and broadband second harmonic generation. Through group velocity engineering of the ridge waveguides, acceptance bandwidth over 20 nm with a high conversion efficiency of > 25%W^(-1)·cm^(-2) is achieved at telecom-band.
基金supported by Advance Research Program of Weapon Equipment, National Natural Science foundation of China (60736038)National Hi-Tech Research and Development Program of China (2007A A01Z269)
文摘The dispersion characteristics and transverse field distribution of the fundamental and higher order modes are analyzed for polymeric ridge multimode waveguide by a new technique which is based on the combination of the effective index method and the variational method. An algorithm is implemented to study the effect of the structure parameters and dimensions on the dispersion curves. The optical field distribution of the fundamental and higher order modes for TM modes are computed. The single mode conditions of polymeric ridge waveguide are obtained. The relationship between the curvature radius and the bending loss of S-shaped ridge waveguide are studied with wide-angle finite-difference beam propagation method and effective index method. The conclusion is: when the curvature radius is larger than 5000 μm, the bending loss will not decrease distinctly even if the curvature radius increases, and the light can propagate stably in the S-shaped ridge waveguide.
文摘Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.
基金supported by the National Natural Science Foundation of China(Nos.11805142,11205096,and 11874243)the Natural Science Foundation of Shandong Province(No.ZR2020QF086)。
文摘Lithium niobate(LiNbO_(3),LN)channel and ridge waveguides have been successfully fabricated by He ion implantation,which has energy of 500 keV and fluence of 1.5×10^(16)ions/cm^(2) and is combined with lithography and the precise diamond dicing technique.The refractive index profile of the annealed LN planar waveguide was reconstructed.The propagation loss of the channel waveguide with a width of 10μm and that of the ridge waveguides with widths of 25μm and 15μm were investigated by the end-face coupling method.In our work,the factors that affect the waveguide properties of channel and ridge waveguides were revealed.
基金supported by the National Key R&D Program of China(Nos.2019YFA0705000 and 2017YFA0303700)the National Natural Science Foundation of China(Nos.91950206,11627810,and 51890861)+2 种基金the Leading-edge Technology Program of Jiangsu Natural Science Foundation(No.BK20192001)the Key R&D Program of Guangdong Province(No.2018B030329001)the Fundamental Research Funds for the Central Universities(No.021314380177)。
文摘Periodically poled lithium niobate on insulator(LNOI) ridge waveguides are desirable for high-efficiency nonlinear frequency conversions, and the fabrication process of such waveguides is crucial for device performance. In this work, we report fabrication and characterization of locally periodically poled ridge waveguides. Ridge waveguides were fabricated by dry etching, and then the high-voltage pulses were applied to locally poled ridge waveguides. Second harmonic generation with normalized conversion efficiency of 435.5% W^(-1)·cm^(-2) was obtained in the periodically poled LNOI ridge waveguide,which was consistent with the triangular domain structure revealed by confocal microscopy.
基金This work was supported by the National Natural Science Foundation of China(Grant Nos.60476026 and 60477010)the National Key Labon High Power Semiconductor Laser of China(Grant Nos.03ZS3603 and 04ZS3601).
文摘Highly strained InGaAs ridge waveguide lasers were fabricated with pulsed anodic oxidation. The laser structure was grown by molecular beam epitaxy (MBE) system. The output powers up to 50 mW per facet in CW mode were reached at room temperature for the 4 μm stripe lasers. The threshold current density of 300 A/cm2 was achieved with 600 μm cavity length. The emission wavelength at 100 mA was 1.19 μm. The slope efficiency was 0.45 W/A in linear output region of light-current characteristics. The laser characteristic temperature was 129 K (20°C–100°C).
