This paper reviews the original achievements and advances regarding the field effect transistor(FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional Mo S2. Not like graphene, ...This paper reviews the original achievements and advances regarding the field effect transistor(FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional Mo S2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer Mo S2 is featured with a 1.9 e V gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed,many Mo S2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the Mo S2-based FETs are presented. Engineering of Mo S2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in Mo S2-based FETs, which is crucial for developing electronic and optoelectronic devices.展开更多
文摘This paper reviews the original achievements and advances regarding the field effect transistor(FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional Mo S2. Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer Mo S2 is featured with a 1.9 e V gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed,many Mo S2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the Mo S2-based FETs are presented. Engineering of Mo S2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in Mo S2-based FETs, which is crucial for developing electronic and optoelectronic devices.
