The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the devic...The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.展开更多
The diode-triggered silicon-controlled rectifier（DTSCR） is widely used for electrostatic discharge（ESD） protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigge...The diode-triggered silicon-controlled rectifier（DTSCR） is widely used for electrostatic discharge（ESD） protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigger/holding voltage, low parasitic capacitance. However, the multiple-triggering effect in the typical DTSCR device may cause undesirable larger overall trigger voltage, which results in a reduced ESD safe margin. In previous research, the major cause is attributed to the higher current level required in the intrinsic SCR. The related discussions indicate that it seems to result from the current division rule between the intrinsic and parasitic SCR formed in the triggering process. In this letter, inserting a large space into the trigger diodes is proposed to get a deeper insight into this issue. The triggering current is observed to be regularly reduced along with the increased space, which confirms that the current division is determined by the parasitic resistance distributed between the intrinsic and parasitic SCR paths. The theoretical analysis is well confirmed by device simulation and transmission line pulse（TLP） test results. The reduced overall trigger voltage is achieved in the modified DTSCR structures due to the comprehensive result of the parasitic resistance vs triggering current, which indicates a minimized multipletriggering effect.展开更多
应用1.4 Me V电子束对单向可控硅晶圆芯片进行固定注量率辐照,通过触发电流和少子寿命表征辐照效应,研究了退火工艺对辐照效应的影响。结果表明:电子辐照缩短单向可控硅少子寿命,增大触发电流。经350℃退火后触发电流恢复到辐照前水平,...应用1.4 Me V电子束对单向可控硅晶圆芯片进行固定注量率辐照,通过触发电流和少子寿命表征辐照效应,研究了退火工艺对辐照效应的影响。结果表明:电子辐照缩短单向可控硅少子寿命,增大触发电流。经350℃退火后触发电流恢复到辐照前水平,少子寿命虽有一定恢复,但远比辐照前短。在试验的注量范围内k系数为常数,退火后k系数与注量相关,小注量时较小。常温存放对辐照效应有较大影响,长时间存放不利于200℃退火而有利于300℃退火。展开更多
基金Project supported by the Beijing Municipal Natural Science Foundation,China(Grant No.4162030)the National Science and Technology Major Project of China(Grant No.2013ZX02303002)
文摘The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
基金supported by the Beijing Natural Science Foundation,China(No.4162030)
文摘The diode-triggered silicon-controlled rectifier（DTSCR） is widely used for electrostatic discharge（ESD） protection in advanced CMOS process owing to its advantages, such as design simplification, adjustable trigger/holding voltage, low parasitic capacitance. However, the multiple-triggering effect in the typical DTSCR device may cause undesirable larger overall trigger voltage, which results in a reduced ESD safe margin. In previous research, the major cause is attributed to the higher current level required in the intrinsic SCR. The related discussions indicate that it seems to result from the current division rule between the intrinsic and parasitic SCR formed in the triggering process. In this letter, inserting a large space into the trigger diodes is proposed to get a deeper insight into this issue. The triggering current is observed to be regularly reduced along with the increased space, which confirms that the current division is determined by the parasitic resistance distributed between the intrinsic and parasitic SCR paths. The theoretical analysis is well confirmed by device simulation and transmission line pulse（TLP） test results. The reduced overall trigger voltage is achieved in the modified DTSCR structures due to the comprehensive result of the parasitic resistance vs triggering current, which indicates a minimized multipletriggering effect.
文摘应用1.4 Me V电子束对单向可控硅晶圆芯片进行固定注量率辐照,通过触发电流和少子寿命表征辐照效应,研究了退火工艺对辐照效应的影响。结果表明:电子辐照缩短单向可控硅少子寿命,增大触发电流。经350℃退火后触发电流恢复到辐照前水平,少子寿命虽有一定恢复,但远比辐照前短。在试验的注量范围内k系数为常数,退火后k系数与注量相关,小注量时较小。常温存放对辐照效应有较大影响,长时间存放不利于200℃退火而有利于300℃退火。
