The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavele...The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro optical spot reflection spectra, PL measurement and X ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device.展开更多
文摘The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro optical spot reflection spectra, PL measurement and X ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device.
